EP0022355A1
Expired / Lapsed
EP
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Gate turn-off thyristor
Assignee: Hitachi Ltd
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Filing: 1980-07-03
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Granted: —
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Expires: 2000-07-03
Abstract
Abstract The GTO thyristor consists of a semiconductor substrate 11 of disc shape which has, in sequence, an emitter layer 16 on the cathode side, a second base layer 15, a first base layer 13,14, and an emitter layer 12 on the anode side. The emitter layer on the anode side is short-circuited by an emitter short-circuiting layer 13. The emitter layer 16 on the cathode side is divided into a plurality of radially extending elongate units, and the emitter layer 12 on the anode side is likewise divided into elongate units which are provided in the portions located at the areas of projection of the units of the layer 16 onto the anode side. The emitter short-circuiting layer 13 thus forms a plurality of wedge-shaped regions between the said areas of projection of the units of the layer 16. A thyristor of high current capacity and quick turn-off is thus achieved because the varying distance from the central lead wire 20 of the control electrode 18 is compensated by the varying width of the said wedge shaped regions of the emitter short circuit layer 13.
Inventors
- 👤 Yoshiteru Shimizu
- 👤 Takahiro Nagano
- 👤 Shuroku Sakurada
- 👤 Takehiro Ohta
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 07:02
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D18/00; H10D18/60
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
373 words
A gate turn-off thyristor comprising: (a) a semiconductor body (11) having first and second main surfaces, (b) four semiconductor layers in said body (11) which layers are a first inner layer (13,14) and a second inner layer (15) contiguous with each other, and a first outer layer (12) and a second outer layer (16) which are respectively contiguous with said first and second inner layers and are exposed respectively at said first and second main surfaces, said second outer layer (16) being, as seen in plan view onto the said second main surface, surrounded by said second inner layer (15), and the conductivity type of each said layer being different from the conductivity type of the or each contiguous layer, (c) an anode (17) on said first main surface and in contact with said first outer layer (12) and said first inner layer (13,14), (d) a cathode (19). on said second main surface and in contact with said second outer layer (16), and (e) a control electrode on said second main surface and in contact with said second inner layer (15), characterized in that: (f) said second outer layer (16) is divided into a plurality of elongate units which as seen in plan view extend generally radially from a centre, (g) said first outer layer (12) is likewise divided into a plurality of generally radially extending elongate units located at the areas of the projection of the said units of the second outer layer (16) onto said first main surface, (h) said first inner layer has a first portion or portions (13) which provide part of said first main surface, and a second portion (14) which is contiguous with said first outer layer (12) on the inner side thereof is separated from said first main surface by said first portion or portions (13), (i) said first portion or portions (13) of the first inner layer provide a plurality of regions which in plan view are wedge-shaped and extend radially from said centre and which are located, as seen in plan view, between said areas of projection of said second outer layer (16) onto said first main surface, and (j) a lead wire (20) connected to said control electrode at or adjacent said centre.
Claim 2
Dependent Claim
373 words
A gate turn-off thyristor comprising: (a) a semiconductor body (11) having first and second main surfaces, (b) four semiconductor layers in said body (11) which layers are a first inner layer (13,14) and a second inner layer (15) contiguous with each other, and a first outer layer (12) and a second outer layer (16) which are respectively contiguous with said first and second inner layers and are exposed respectively at said first and second main surfaces, said second outer layer (16) being, as seen in plan view onto the said second main surface, surrounded by said second inner layer (15), and the conductivity type of each said layer being different from the conductivity type of the or each contiguous layer, (c) an anode (17) on said first main surface and in contact with said first outer layer (12) and said first inner layer (13,14), (d) a cathode (19). on said second main surface and in contact with said second outer layer (16), and (e) a control electrode on said second main surface and in contact with said second inner layer (15), characterized in that: (f) said second outer layer (16) is divided into a plurality of elongate units which as seen in plan view extend generally radially from a centre, (g) said first outer layer (12) is likewise divided into a plurality of generally radially extending elongate units located at the areas of the projection of the said units of the second outer layer (16) onto said first main surface, (h) said first inner layer has a first portion or portions (13) which provide part of said first main surface, and a second portion (14) which is contiguous with said first outer layer (12) on the inner side thereof is separated from said first main surface by said first portion or portions (13), (i) said first portion or portions (13) of the first inner layer provide a plurality of regions which in plan view are wedge-shaped and extend radially from said centre and which are located, as seen in plan view, between said areas of projection of said second outer layer (16) onto said first main surface, and (j) a lead wire (20) connected to said control electrode at or adjacent said centre.
Claim 3
Dependent Claim
49 words
A thyristor according to claim 1 wherein said first portion or portions (13) of said first inner layer has the same conductivity type as said second portion (14) of said first inner layer and has a higher impurity concentration than said second portion (14) of said first inner layer.
Claim 4
Dependent Claim
33 words
A thyristor according to claim 1 wherein said first portion or portions (13) of said first inner layer has the same impurity concentration as said second portion (14) of said first inner layer.
Claim 5
Dependent Claim
39 words
A thyristor according to any one of claims 1 to 3 wherein said units of said first outer layer (12) are connected together by short-circuiting regions (12a) which have the same conductivity type as said first outer layer (12).
Claim 6
Dependent Claim
19 words
A thyristor according to any one of claims 1 to 4 wherein said semiconductor body is a circular disc.
Claim 7
Dependent Claim
54 words
A thyristor according to any one of claims 1 to 5, wherein said first outer layer (12) has the same conductivity type as said first inner layer (13,14) has a higher impurity concentration than said first inner layer (13,14) and surrounds a third semiconductor layer which is in contact with said first main surface.
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US3504242A
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GB1314985A
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DE2055353B2
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FR2185860A1
Cited
EP0009367A1
Cited
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