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EP0020116A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Masterslice semiconductor device and method of producing it

Assignee: Fujitsu Ltd
•
Filing: 1980-05-23
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Granted: —
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Expires: 2000-05-23
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Abstract

Abstract In a semiconductor device capable of use as a masterslice and comprising a mass-produced semiconductor bulk in which a plurality of basic circuit elements are formed, conductive lines (24) for connecting the basic circuit elements are formed on a first insulation layer (22) of the semiconductor bulk during mass production, together with a second insulation layer (25) formed over the first insulation layer and the said conductive lines (24). Some of the conductive connecting lines (24) are broken, i.e. are formed as two spaced portions, one end of each of the two portions being connected to a respective one of two basic elements (Q1, R1) to be connected by the line, and the second insulation layer (25) is provided with a pair of through-holes (11, 11 min ) for each such line which communicate respectively with the other ends of the said two portions. The connections between the basic elements can then be completed as desired by providing interconnections (16) between the said other ends by way of the through-holes (11, 11 min ).

Inventors

  • 👤 Kenichi Ohno
  • 👤 Rokutaro Ogawa
  • 👤 Tohru Hosomizu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-23 04:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10D; H10D84/00; H10D84/90; H10D84/901

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 162 words
A semiconductor device comprising a semiconductor bulk in which a cell including a plurality of basic circuit elements is formed, first conductive lines (24) for connecting the basic circuit elements being formed on a first insulation layer (22) of the said semiconductor bulk and a second insulation layer (25) being formed over the first interconnecting lines, characterized in that at least one of the said first conductive lines (24) between two of the said basic elements (Ql, Rl) in the cell comprises two separate portions, one end of each of the portions being connected to a respective one of the basic elements, and in that the said second insulation layer (25) is provided with a pair of through-holes (11, 11') which communicate respectively with the other ends of the said two portions of the said conductive line (24), whereby the basic elements can be interconnected (16) by connecting together, by way of the through-holes, the said other ends of the two portions.
Claim 2
Dependent Claim 162 words
A semiconductor device comprising a semiconductor bulk in which a cell including a plurality of basic circuit elements is formed, first conductive lines (24) for connecting the basic circuit elements being formed on a first insulation layer (22) of the said semiconductor bulk and a second insulation layer (25) being formed over the first interconnecting lines, characterized in that at least one of the said first conductive lines (24) between two of the said basic elements (Ql, Rl) in the cell comprises two separate portions, one end of each of the portions being connected to a respective one of the basic elements, and in that the said second insulation layer (25) is provided with a pair of through-holes (11, 11') which communicate respectively with the other ends of the said two portions of the said conductive line (24), whereby the basic elements can be interconnected (16) by connecting together, by way of the through-holes, the said other ends of the two portions.
Claim 3
Dependent Claim 39 words
A semiconductor device as set forth in claim 1, characterized in-that at least one conductor (16) is provided on the second insulation layer and extends into the said through-holes so as to electrically connect the said two portions .
Claim 4
Dependent Claim 32 words
A semiconductor device as set forth in claim 1 or 2, characterized in that at least one of the through-holes is arranged for selective connection to a power line or ground line.
Claim 5
Dependent Claim 91 words
A semiconductor device as set forth in claim 2, characterized in that the through-holes are distributed in through-hole areas formed on said second insulation layer, in that second interconnecting lines formed thereon, including the said conductor, are distributed on line areas formed on the same second insulation layer, the through-hole areas being spaced in a first direction (X) at a predetermined pitch and extend a second direction (Y), perpendicular to the first direction, each of the said line areas being located between one through-hole area and another through-hole area adjacent thereto.
Claim 6
Dependent Claim 33 words
A semiconductor device as set forth in claim 4, wherein the first interconnecting lines are arranged in the first direction (X) and the second interconnecting lines are arranged in the second direction (Y).
Claim 7
Dependent Claim 31 words
A semiconductor device as set forth in claim 5, wherein the first interconnecting line is connected to the second interconnecting line via the through-hole located adjacent to the first interconnecting line.
Claim 8
Dependent Claim 35 words
A semiconductor device as set forth in claim 4, wherein the said conductor is also distributed on the said through-hole area, if a corresponding pair of the through-holes are located on the same through-hole area.

References Cited (Backward Citations)

US3618201A Cited
US3999214A Cited
FR2374817A1 Cited

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