EP0019355A1
Expired / Lapsed
EP
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Transistor structure
Assignee: Fujitsu Ltd
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Filing: 1980-04-10
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Granted: —
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Expires: 2000-04-10
Abstract
Abstract A transistor structure has a collector region (11, 61), a base region (12,62) and a stripe-form emitter zone (13, 63), of collector region conductivity type, formed within the base region (12, 62). Within the emitter zone (13, 63) isolation regions (14) or stabilizing resistor regions (64) of the base region conductivity type are formed to divide the emitter zone (13, 63) into small emitter regions (13-a, 13-b etc). The small emitter regions are connected in parallel by an emitter electrode (16a; 67a, 67b) which extends over the stripe-form emitter zone (13, 63). The emitter electrode is connected to each small emitter region directly or by way of a stabilizing resistor region (43, 53, 64). A plurality of stripe-form emitter zones (102, 113) can be connected in common (see Fig. 7 or Fig. 8) by a region (101, 117) of the same conductivity type as the emitter zones (102, 113). To prevent parasitic transistor operation an isolation region (103) or a stabilizing resistor region (114) is disposed between an emitter zone (102,113) and the connecting region (101,117).
Inventors
- 👤 Yoshiaki Nawata
- 👤 Yasutaka Nakatani
- 👤 Haruki Nakazawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 18:32
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; H10D84/00; H10D84/101; H10D84/121; H10D84/125
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
70 words
A transistor structure having a collector region of a first conductivity type, and a base region of a second, opposite, conductivity type, characterised in that the structure comprises a further region, of the first conductivity type, formed within the base region, and an additional region, of the second conductivity type, arranged to divide the further region into a plurality of regions of which at least one is an emitter region.
Claim 2
Dependent Claim
70 words
A transistor structure having a collector region of a first conductivity type, and a base region of a second, opposite, conductivity type, characterised in that the structure comprises a further region, of the first conductivity type, formed within the base region, and an additional region, of the second conductivity type, arranged to divide the further region into a plurality of regions of which at least one is an emitter region.
Claim 3
Dependent Claim
67 words
A transistor structure having a collector region of a first conductivity type, and a base region of a second, opposite, conductivity type, characterised in that the structure comprises a further region, of the first conductivity type, formed within the base region, and an additional region, of the second conductivity type, formed within the further region so as to divide that region into a plurality of emitter regions.
Claim 4
Dependent Claim
67 words
A transistor structure having a collector region of a first conductivity type, and a base region of a second, opposite, conductivity type, characterised in that the structure comprises a further region, of the first conductivity type, formed within the base region, and an additional region, of the second conductivity type, formed within the further region so as to divide that region into a plurality of emitter regions.
Claim 5
Dependent Claim
29 words
A transistor structure as claimed in claim 2, wherein the additional region divides the further region, which constitutes a larger emitter zone, into a plurality of small emitter regions.
Claim 6
Dependent Claim
20 words
A transistor structure as claimed in claim 3, wherein the further region is in the form of a stripe. structure
Claim 7
Dependent Claim
18 words
A transistor as claimed in claim 2, 3 or 4, wherein the additional region is an isolation region.
Claim 8
Dependent Claim
29 words
A transistor structure as claimed in claim 5, wherein respective stabilizing resistor regions, of the said second conductivity type, are disposed within the respective emitter regions of the plurality.
Claim 9
Dependent Claim
20 words
A transistor structure as claimed in claim 2, 3 or 4, wherein the additional region is a stabilizing resistor region.
Claim 10
Dependent Claim
60 words
A transistor structure as claimed in claim 6 or 7, wherein electrical connection between an emitter region and an emitter electrode layer is established through an electrically conductive layer which is connected between one end of the stabilizing resistor region and the emitter region concerned, the other end of the stabilizing resistor region being connected to an emitter electrode layer.
Claim 11
Dependent Claim
46 words
A transistor structure as claimed in claim 5, wherein respective stabili.zing resistor layers, of a resistor material, are disposed over the respective emitter regions of the plurality, electrical connection between an emitter region and an emitter electrode layer being established through the stabilizing resistor layer concerned.
Claim 12
Dependent Claim
37 words
A transistor structure as claimed in any one of claims 2 to 9, wherein the emitter regions of the plurality are electrically connected in parallel by an emitter electrode layer which is disposed over the further region.
Claim 13
Dependent Claim
66 words
A transistor structure as claimed in any of claims 2 to 10, wherein the further region extends in the form of a stripe, and the additional region extends substantially orthogonally across the stripe, the structure further comprising a base contact region, formed within the base region, which extends alongside the stripe of the further region, and a base electrode layer connected to the base contact region.
Claim 14
Dependent Claim
27 words
A transistor structure as claimed in any preceding claim, wherein each of the emitter regions of the plurality, when viewed in plan, has a generally rectangular shape.
Claim 15
Dependent Claim
27 words
A transistor structure as claimed in any one of claims 2 to 11, wherein each of the emitter regions of the plurality has a generally stripe-form shape.
Claim 16
Dependent Claim
24 words
A transistor structure as claimed in any preceding claim, wherein the emitter regions of the plurality are disposed in the form of a matrix.
Claim 17
Dependent Claim
61 words
A transistor structure as claimed in claim 1, wherein the said at least one emitter region is in the form of a stripe, the said additional region being formed within the further region in an area where the stripe emitter region conects to a remaining part of the further region, thereby to separate the stripe emitter region from that remaining part.
Claim 18
Dependent Claim
63 words
A transistor structure as claimed in claim 15, wherein the further region provides a plurality of stripe emitter regions, and a plurality of such additional regions are formed within the further region in respective areas where the respective stripe emitter regions connect to the remaining part of the further region, thereby to separate the respective stripe emitter regions from that remaining part. structure
Claim 19
Dependent Claim
53 words
A transistorLas claimed in claim 15, wherein the further region provides a plurality of stripe emitter regions, each connected to the remaining part of the further region, and wherein the additional region extends throughout substantially the whole of the said remaining part, thereby to separate each stripe emitter region from that remaining part.
Claim 20
Dependent Claim
23 words
A transistor structure as claimed in any one of claims 15 to 17, wherein the or each additional region is an isolation region.
Claim 21
Dependent Claim
54 words
A transistor structure as claimed in claim 15 or 16, wherein each additional region is a stabilizing resistor region, one end of which is connected to an emitter electrode layer which is itself connected to the stripe emitter region concerned, and thebther end of which is connected to an emitter electrode lead out layer.
Claim 22
Dependent Claim
28 words
A transistor structure as claimed in any one of claims 15 to 19, wherein the said remaining part of the further region is disposed under a bonding pad.
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