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EP0004238A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Integrated circuit and method of manufacturing it

Assignee: Thales SA
•
Filing: 1979-03-06
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Granted: —
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Expires: 1999-03-06
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Abstract

Abstract These integrated circuits are disposed on a semiconductor crystal and operate at voltages of the order of 40 volts. In this case of high voltages, the electric fields which exist between two layers of the integrated circuit are sufficiently great to cause migration of the charges of electrons which are situated within a layer (5), and to reverse the conductivity of the semiconductor. The sensitive points of the integrated circuit are equipped with a screen (16), which is brought to a specified potential and which entirely surrounds each sensitive region. Applications to integrated circuits, especially to those intended for telephone installations. <IMAGE>

Inventors

  • 👤 Eugène Tonnel

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 16:24
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

FR1562742A Cited
FR1587469A Cited
US3573571A Cited
US3825997A Cited

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