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EP0002957A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Electron beam exposure apparatus

Assignee: Fujitsu Ltd
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Filing: 1978-12-22
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Granted: —
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Expires: 1998-12-22
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Abstract

Abstract An electron beam exposure apparatus provides a basic pattern data memory for storing data corresponding to the dimensions and the positions of patterns of a basic unit pattern which frequently appears as a unit in patterns to be exposed on a wafer, and a central processor provided with an additional memory system which stores data corresponding to the positions at which the basic unit pattern is to be exposed. This apparatus determines the position of the basic unit pattern by adding from the basic pattern data memory and data from the additional memory system through the central processor in accordance with a command from the central processor. Thereafter, data corresponding to the dimensions of the patterns in the basic unit patterns from the basic pattern data memory are fed as an input to a deflection system. As a result, the apparatus applies electron beam deflection signals which are produced by using the obtained data corresponding to the positions and the dimensions of the basic unit patterns, to beam deflecting means.

Inventors

  • 👤 Kenichi Kawashima
  • 👤 Hiroshi Yasuda
  • 👤 Kenyu Uema

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 09:39
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; B; B82; B82Y; B82Y10/00; B82Y40/00; H01J37/302; H01J37/3023; H01J37/3026; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3175; H01J2237/31761; H01J2237/31762

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 213 words
. Electron beam exposure apparatus which is adapted to project an electron beam with desired patterns,characterised by a basic unit pattern data memory (22) for storing data corresponding to dimensions and the positions of patterns of at least one basic unit pattern which appears as a unit more than once in said desired patterns to be exposed; a central processor (21) for providing data corresponding to positions at which said basic unit pattern is to be exposed; means (30) for determining the position of said basic pattern by adding the data of the position which is read from the basic unit pattern memory and the data of the position which is provided by the central processor, in accordance with a command from the central processor; means (34) for providing data of one of said dimensions from the basic pattern data memory; means for providing electron beam deflection signals based on the data of one of said dimensions which are provided by the data providing means and based on the position which is determined in the position determining means; and deflection means (10) for determining a dimension of a cross section of the electron beam and a projecting position of the electron beam, the deflecting means being controlled by the electron beam deflection signals.
Claim 2
Dependent Claim 213 words
. Electron beam exposure apparatus which is adapted to project an electron beam with desired patterns,characterised by a basic unit pattern data memory (22) for storing data corresponding to dimensions and the positions of patterns of at least one basic unit pattern which appears as a unit more than once in said desired patterns to be exposed; a central processor (21) for providing data corresponding to positions at which said basic unit pattern is to be exposed; means (30) for determining the position of said basic pattern by adding the data of the position which is read from the basic unit pattern memory and the data of the position which is provided by the central processor, in accordance with a command from the central processor; means (34) for providing data of one of said dimensions from the basic pattern data memory; means for providing electron beam deflection signals based on the data of one of said dimensions which are provided by the data providing means and based on the position which is determined in the position determining means; and deflection means (10) for determining a dimension of a cross section of the electron beam and a projecting position of the electron beam, the deflecting means being controlled by the electron beam deflection signals.
Claim 3
Dependent Claim 418 words
Electron beam exposure apparatus which is adapted for projecting an electron beam on to a material to be exposed, the apparatus being characterised by a basic unit pattern data memory (22) for storing information corresponding to dimensions (X 2 , Y 2 ) and to positions (X 1 , Y 1 ) of a plurality of patterns of at least one basic unit pattern in each of addresses (P 1 , P 2 , ...); a central processor (21) which is provided with additional memory means (26) for storing information corresponding to positions (X 3 , Y 3 ) at which the basic unit pattern is to be exposed, the additional memory means being controlled by the central processor; a clock circuit (27) which is controlled by the central processor and which actuates the basic unit pattern data memory to provide information therein; an address counter (25) which is connected to the clock circuit and which sets a first address of the basic unit pattern memory, the first address being provided by the central processor; a final data address register (23) for storing a final data address provided by the central processor; a coincidence circuit (24) which instructs the central processor that exposure of the pattern is finished when the contents of the address counter and the contents of the final address register coincide; a first register (28) and a second register (29) for storing the position data (X 3 , Y 3 ) which are provided from the additional memory through the central processor; a first adder (30) and a second adder (31) for respectively adding the contents of the first and second registers to the position data (X 1 , Y 1 ) from the basic unit pattern data memory; a first digital-analog converter (32) and a second digital-analog converter (33) for respectively converting the outputs of the first and second adders to analog outputs and for supplying said analog outputs to first deflector means (10) for determining the position of the basic unit patterns; a third digital-analog converter (34) and a fourth digital. analog converter (35) for converting the data of said dimension (X 2 , Y 2 ) derived from the basic unit pattern data memory to analog outputs and for supplying said analog outputs to second deflector means (6) for controlling the dimension of a cross section of the electron beam; and means (41) for displacing the position of the material to be exposed in accordance with the command of the central processor.
Claim 4
Dependent Claim 418 words
Electron beam exposure apparatus which is adapted for projecting an electron beam on to a material to be exposed, the apparatus being characterised by a basic unit pattern data memory (22) for storing information corresponding to dimensions (X 2 , Y 2 ) and to positions (X 1 , Y 1 ) of a plurality of patterns of at least one basic unit pattern in each of addresses (P 1 , P 2 , ...); a central processor (21) which is provided with additional memory means (26) for storing information corresponding to positions (X 3 , Y 3 ) at which the basic unit pattern is to be exposed, the additional memory means being controlled by the central processor; a clock circuit (27) which is controlled by the central processor and which actuates the basic unit pattern data memory to provide information therein; an address counter (25) which is connected to the clock circuit and which sets a first address of the basic unit pattern memory, the first address being provided by the central processor; a final data address register (23) for storing a final data address provided by the central processor; a coincidence circuit (24) which instructs the central processor that exposure of the pattern is finished when the contents of the address counter and the contents of the final address register coincide; a first register (28) and a second register (29) for storing the position data (X 3 , Y 3 ) which are provided from the additional memory through the central processor; a first adder (30) and a second adder (31) for respectively adding the contents of the first and second registers to the position data (X 1 , Y 1 ) from the basic unit pattern data memory; a first digital-analog converter (32) and a second digital-analog converter (33) for respectively converting the outputs of the first and second adders to analog outputs and for supplying said analog outputs to first deflector means (10) for determining the position of the basic unit patterns; a third digital-analog converter (34) and a fourth digital. analog converter (35) for converting the data of said dimension (X 2 , Y 2 ) derived from the basic unit pattern data memory to analog outputs and for supplying said analog outputs to second deflector means (6) for controlling the dimension of a cross section of the electron beam; and means (41) for displacing the position of the material to be exposed in accordance with the command of the central processor.

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