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Thyristor fired by overvoltage

Assignee: Westinghouse Electric Corp
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Filing: 1976-12-08
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Granted: 1979-05-22
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Expires: 1996-12-08
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Abstract

Abstract IMPROVED THYRISTOR FIRED BY OVERVOLTAGE ABSTRACT OF THE DISCLOSURE A thyristor having an auxiliary cathode emitter region disposed in the central portion of the device in PN junction relationship with a cathode base region is dis-closed. An extra impurity region of the same conductivity type as the cathode base region is disposed in the cathode base region in the central portion of the device inwardly of the outer boundary of the auxiliary cathode emitter. The extra impurity region has a higher impurity density gradient adjacent the common PN junction formed by the cathode and anode base regions than the remainder of such junction.

Inventors

  • 👤 Earl S. Schlegel

Bibliographic Details

Application Number —
Jurisdiction CA
Data Source google_patents
Last Synchronized 2026-11-03 23:25
CPC Classifications
—

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 331 words
A thyristor adapted to fire in response to a predetermined forward overvoltage, comprising: a body of semiconductor material having first and second outer surfaces with four impurity regions of alter-nate type conductivity disposed in PN junction relationship said regions being a cathode emitter region and a cathode base region, each having surfaces forming a portion of the first outer surface of the body, an anode base region and an anode emitter region, said anode emitter region having a surface forming at least a portion of the second outer surface of the body; said cathode emitter region including an inner auxiliary and an outer main portion, said auxiliary portion being disposed to form the central portion of the first outer surface and having an outer boundary of predetermined dimension said main portion being radially spaced from the inner portion with at least a portion of the cathode base region forming the first outer surface of the body between the auxiliary and main cathode emitter regions; an extra impurity region of the same conductivity type as the cathode base region disposed in the cathode base region centrally of the outer boundary of the auxiliary cathode emitter region portion; said extra impurity region having a higher impu-rity density gradient adjacent the PN junction formed by the cathode and anode base regions than the density gradient of the PN junction radially spaced from said extra region; a metallic electrode in ohmic contact with the first outer surface disposed overlying the PN junction formed at the outer boundary of the auxiliary cathode emit-ter region and the cathode base region; a metallic cathode electrode in ohmic contact with the first outer surface formed by the main cathode emitter region portion; and a metallic anode electrode in ohmic contact with the second outer surface formed by the anode emitter region, whereby a predetermined overvoltage applied to the anode electrode causes the device to avalanche initially in the area of the said extra region of the cathode base region.
Claim 2
Dependent Claim 331 words
A thyristor adapted to fire in response to a predetermined forward overvoltage, comprising: a body of semiconductor material having first and second outer surfaces with four impurity regions of alter-nate type conductivity disposed in PN junction relationship said regions being a cathode emitter region and a cathode base region, each having surfaces forming a portion of the first outer surface of the body, an anode base region and an anode emitter region, said anode emitter region having a surface forming at least a portion of the second outer surface of the body; said cathode emitter region including an inner auxiliary and an outer main portion, said auxiliary portion being disposed to form the central portion of the first outer surface and having an outer boundary of predetermined dimension said main portion being radially spaced from the inner portion with at least a portion of the cathode base region forming the first outer surface of the body between the auxiliary and main cathode emitter regions; an extra impurity region of the same conductivity type as the cathode base region disposed in the cathode base region centrally of the outer boundary of the auxiliary cathode emitter region portion; said extra impurity region having a higher impu-rity density gradient adjacent the PN junction formed by the cathode and anode base regions than the density gradient of the PN junction radially spaced from said extra region; a metallic electrode in ohmic contact with the first outer surface disposed overlying the PN junction formed at the outer boundary of the auxiliary cathode emit-ter region and the cathode base region; a metallic cathode electrode in ohmic contact with the first outer surface formed by the main cathode emitter region portion; and a metallic anode electrode in ohmic contact with the second outer surface formed by the anode emitter region, whereby a predetermined overvoltage applied to the anode electrode causes the device to avalanche initially in the area of the said extra region of the cathode base region.
Claim 3
Dependent Claim 44 words
A thyristor according to claim 1 wherein the auxiliary portion of the cathode emitter region is annularly configured to surround the extra region with the centermost boundary of the inner cathode emitter region being radially spaced from the outer boundary of said extra region.
Claim 4
Dependent Claim 44 words
A thyristor according to claim 1 wherein the auxiliary portion of the cathode emitter region forms the central portion of the first outer surface, and the extra region is disposed to intersect the auxiliary cathode emit-ter region centrally in said inner cathode emitter region.
Claim 5
Dependent Claim 40 words
A thyristor according to claim 1 wherein the auxiliary portion of the cathode emitter region is of annu-lar configuration, and the extra region is dimensioned such that it intersects the inner cathode emitter region inter-mediate its inner and outer boundaries.
Claim 6
Dependent Claim 34 words
A thyristor according to claim 4 wherein the intersection of the auxiliary cathode emitter region and the extra region is close to and larger than the inner boundary of the auxiliary cathode emitter region.
Claim 7
Dependent Claim 41 words
A thyristor according to claim 1 further including a gate electrode in ohmic contact with the first outer surface and so dimensioned that its outer boundary is radially spaced inwardly from the inner boundary of the auxiliary cathode emitter region portion.
Claim 8
Dependent Claim 31 words
A thyristor according to claim 4 wherein the extra region is annularly configured and has an inner boundary radially spaced inwardly from the inner boundary of the auxiliary cathode emitter region.

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