UST104102I4
Expired / Lapsed
US
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Polysilicon-base self-aligned bipolar transistor process and structure
Assignee: Allen P. Ho
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Filing: 1982-04-22
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Granted: 1984-04-03
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Expires: 2002-04-22
Abstract
Abstract A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.
Inventors
- 👤 Allen P. Ho
- 👤 Cheng T. Horng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:55
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/40; H10D10/441; H10D10/01; H10D10/051; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-03 | 1987-10-03 | 1988-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-03 | 1991-10-03 | 1992-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-03 | 1995-10-03 | 1996-04-03 | $7700.00 | Window Closed / Lapsed |