Abstract An infrared laser system and method for isotope separation may comprise a molecular gas laser oscillator to produce a laser beam at a first wavelength, Raman spin flip means for shifting the laser to a second wavelength, a molecular gas laser amplifier to amplify said second wavelength laser beam to high power, and optical means for directing the second wavelength, high power laser beam against a desired isotope for selective excitation thereof in a mixture with other isotopes. The optical means may include a medium which shifts the second wavelength high power laser beam to a third wavelength, high power laser beam at a wavelength coincidental with a corresponding vibrational state of said isotope and which is different from vibrational states of other isotopes in the gas mixture.
said lasing medium..]. 8. A laser system for generating a high power laser beam comprising molecular gas laser oscillator means for producing a laser beam at a first wavelength; Raman spin flip means in optical alignment with said laser beam for shifting said laser beam to a second wavelength; molecular gas laser amplifier means in optical alignment with the wavelength shifted laser beam for amplifying said second wavelength laser beam to said high power; and gas absorber means for shifting .[.said.]. .Iadd.the amplified .Iaddend.second wavelength laser beam to a third wavelength high power laser beam. .[.9. A method for producing a high power laser beam for selective excitation of a desired isotope specie in a gaseous mixture of isotope species comprising generating an infrared laser beam at a first wavelength; shifting the first wavelength of said laser beam to a second wavelength; amplifying said second wavelength laser beam to said high power; irradiating said gaseous mixture with said high power laser beam to selectively excite said desired isotope specie; and shifting said second wavelength laser beam to a wavelength coincident with a vibrational state of said desired isotope specie separate from vibrational states of said other isotope species in said gas mixture..]. .Iadd. 10. An infrared laser irradiation system for generating a high power laser beam at a desired wavelength and desired linewidth comprising: molecular gas laser oscillator means for producing a laser beam at a first wavelength; Raman spin flip means in optical alignment with said laser beam for frequency shifting said laser beam to a second wavelength; molecular gas laser amplifier means in optical alignment with said Raman spin flip means for amplifying said laser beam at said second wavelength to a higher power to produce an amplified second wavelength laser beam; Raman scattering laser means for frequency shifting said amplified second wavelength laser beam to produce said high power laser beam at said desired wavelength and linewidth. .Iaddend..Iadd. 11. A method for producing a high power laser beam at a preselected wavelength comprising the steps of: generating an infrared laser beam at a first wavelength; Raman shifting said first wavelength of said laser beam to a second wavelength; amplifying said second wavelength laser beam to said high power; Raman shifting said second wavelength laser beam to said preselected
Claim 2
Dependent Claim
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wavelength. .Iaddend..Iadd. 12. A laser system for generating a laser signal at approximately 16 μm comprising: CO 2 laser means for producing a laser injection beam at a predetermined frequency; H 2 Raman scattering means for shifting said predetermined frequency of said laser injection beam to approximately 16 μm using rotational Raman transitions in H 2 . .Iaddend..Iadd. 13. The laser system of claim 12 wherein said predetermined frequency is approximately 10.19 μm. .Iaddend..Iadd. 14. A laser system for generating a laser signal at approximately 7.75 μm comprising: CO laser means for producing a laser injection beam at a predetermined frequency; H 2 scattering means for shifting said predetermined frequency of said laser injection beam to approximately 7.75 μm using rotational Raman transitions in H 2 . .Iaddend..Iadd. 15. The laser system of claim 14 wherein said predetermined frequency is approximately 5.32 μm. .Iaddend.