USH842H
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal conductor structure having low electro-migration at high currents for semiconductor devices
Assignee: AT&T Inc
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Filing: 1989-06-30
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Granted: 1990-11-06
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Expires: 2009-06-30
Abstract
Abstract A technique for providing high current carrying metal conductors for coupling to transistors or the like to increase the current carrying capacity of the transistor without substantial increase in size. The conductors are tapered along the axis of current flow with current being conducted to or from the tapered portion of the conductors, such that the current density therein is substantially constant.
Inventors
- 👤 Christopher D. Ochs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
79 words
An integrated circuit having at least one metal conductor and at least one MOSFET, the MOSFET having a drain region and a source region, characterized by: multiple contacts, coupled to the metal conductor along a major axis thereof, for conducting current to or from the metal conductor and the drain or source regions; and, the metal conductor being tapered along the major axis thereof; wherein the current density in the metal conductor is substantially constant along the major axis.
Claim 2
Dependent Claim
79 words
An integrated circuit having at least one metal conductor and at least one MOSFET, the MOSFET having a drain region and a source region, characterized by: multiple contacts, coupled to the metal conductor along a major axis thereof, for conducting current to or from the metal conductor and the drain or source regions; and, the metal conductor being tapered along the major axis thereof; wherein the current density in the metal conductor is substantially constant along the major axis.
Claim 3
Dependent Claim
20 words
The integrated circuit as recited in claim 1, wherein the metal conductor is tapered into the shape of a trapezoid.
Claim 4
Dependent Claim
24 words
The integrated circuit as recited in claim 2, wherein the MOSFET has both the source and drain regions coupling to corresponding tapered metal conductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |