USH147H
Expired / Lapsed
US
⏱️ 0.0 years remaining
High resistivity group III-V compounds by helium bombardment
Assignee: Nokia Bell Labs
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Filing: 1983-05-31
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Granted: 1986-11-04
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Expires: 2003-05-31
Abstract
Abstract Helium-3 and helium-4 bombardment of InP over a fluence range of 10 11 to 10 16 ions/cm 2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10 9 ohm-cm for p-type InP and are about 10 3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.
Inventors
- 👤 Leonard C. Feldman
- 👤 Marlin W. Focht
- 👤 Albert T. Macrander
- 👤 Bertram Schwartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:38
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H01; H01S; H01S5/00; H01S5/20; H10F; H10F71/00; H10F71/127; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P30/208; H10W; H10W10/00; H10W10/01; H01S5/2054; H01S5/2059; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
41 words
A method of manufacturing a semiconductor device, which includes a process of creating at least one high resistivity semiconductor zone in Group III-V semiconductor body, is CHARACTERIZED IN THAT said process comprises the step of irradiating said zone with helium ions.
Claim 2
Independent Claim
41 words
A method of manufacturing a semiconductor device, which includes a process of creating at least one high resistivity semiconductor zone in Group III-V semiconductor body, is CHARACTERIZED IN THAT said process comprises the step of irradiating said zone with helium ions.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said zone is irradiated with 4 He ions.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said zone is irradiated with 3 He ions.
Claim 5
Independent Claim
15 words
The method of claims 1, 2 or 3 wherein said body includes indium and phosphorus.
Claim 6
Dependent Claim
30 words
The method of claim 4 wherein said zone is irradiated with ions haing a fluence of approximately 10 11 -10 16 ions/cm 2 and an energy of approximately 150-270 keV.
Claim 7
Independent Claim
52 words
A method of manufacturing a semiconductor device comprising the steps of: providing a single crystal Group III-V compound semiconductor body, forming a patterned mask on one surface of said body, and irradiating said patterned surface with helium ions so as to create high resistivity zones under the unmasked portions of said surface.
Claim 8
Independent Claim
52 words
A method of manufacturing a semiconductor device comprising the steps of: providing a single crystal Group III-V compound semiconductor body, forming a patterned mask on one surface of said body, and irradiating said patterned surface with helium ions so as to create high resistivity zones under the unmasked portions of said surface.
Claim 9
Dependent Claim
14 words
The method of claim 6 wherein said zone is irradiated with 4 He ions.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein said zone is irradiated with 3 He ions.
Claim 11
Independent Claim
15 words
The method of claims 6, 7 or 8 wherein said body includes indium and phosphorus.
Claim 12
Dependent Claim
30 words
The method of claim 8 wherein said zone is irradiated with ions having a fluence of approximately 10 11 -10 16 ions/cm 2 and an energy of approximately 150-270 keV.
Claim 13
Dependent Claim
65 words
A semiconductor light emitting device comprising: a Group III-V compound semiconductor body containing indium adn phosphours and including an active layer, means for constraining pumping current to flow in a relatively narrow channel across said active layer, and electrode means for applying said pumping current to said body CHARACTERIZED IN THAT said constraining means comprises helium-ion bombarded regions which bound the sides of said channel.
Claim 14
Dependent Claim
65 words
A semiconductor light emitting device comprising: a Group III-V compound semiconductor body containing indium adn phosphours and including an active layer, means for constraining pumping current to flow in a relatively narrow channel across said active layer, and electrode means for applying said pumping current to said body CHARACTERIZED IN THAT said constraining means comprises helium-ion bombarded regions which bound the sides of said channel.
Claim 15
Dependent Claim
13 words
The device of claim 11 wherein said regions are 4 He bombarded regions.
Claim 16
Dependent Claim
13 words
The devive of claim 11 wherein said regions are 3 He bombarded regions.
Claim 17
Dependent Claim
25 words
The device of claim 11 wherein said channel is essentially an elongated, parallelepiped, and said regions comprise elongated laterally separate zones which bound said channel.
Claim 18
Dependent Claim
21 words
The device of claim 11 wherein said channel is essentially cylindrical and said regions comprise an annular zone surrounding said channel.
Claim 19
Dependent Claim
32 words
A semiconductor device comprising a Group III-V compound body containing indium and phosphorus, a planar p-n junction in said body, and a high resistivity, helium-ion bombarded region which extends through said junction.
Claim 20
Dependent Claim
32 words
A semiconductor device comprising a Group III-V compound body containing indium and phosphorus, a planar p-n junction in said body, and a high resistivity, helium-ion bombarded region which extends through said junction.
Claim 21
Dependent Claim
42 words
The device of claim 16 wherein said region comprises a plurality of laterally separate, high resistivity zones which extend from a surface of said body through said junction so as to form between each pair of said plurality a p-n junction device.
Claim 22
Dependent Claim
14 words
The device of claim 16 wherein said region comprises a 4 He bombarded region.
Claim 23
Dependent Claim
14 words
The device of claim 16 wherein said region comprises a 3 He bombarded region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-03 | 1990-05-05 | 1990-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-03 | 1994-05-05 | 1994-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-03 | 1998-05-05 | 1998-11-04 | $7700.00 | Window Closed / Lapsed |