US7907251B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Exposure apparatus and device manufacturing method
Assignee: Canon Inc
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Filing: 2006-10-17
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Granted: 2011-03-15
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Expires: 2026-10-17
Abstract
Abstract An exposure apparatus ( 1 ) has a projection optical system ( 30 ) for projecting a pattern of a reticle onto a substrate, and exposes the substrate ( 40 ) via a liquid supplied in a space between the projection optical system ( 30 ) and the substrate ( 40 ). The exposure apparatus includes a gas curtain producer having two gas supply ports ( 103 a , 103 b ) for supplying a gas to a circumference of the liquid and for limiting the liquid, the two gas supply ports ( 103 a , 103 b ) supplying different types of gases (PG 1 , PG 2 ).
Inventors
- 👤 Noriyasu Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:07
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70216; G03F7/70341; G03F7/20; G03F7/2041; G03F7/70425; G03F7/708; G03F7/70908; G03F7/70916
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
96 words
An exposure apparatus comprising: a projection optical system for projecting a pattern of a reticle onto a substrate, said exposure apparatus exposing the substrate via a liquid supplied in a space between the projection optical system and the substrate; a first gas supply port for supplying a first gas to a circumference of the liquid; and a second gas supply port for supplying a second gas different from the first gas, the second gas supply port being arranged outer than the first gas supply port with respect to an optical axis of said projection optical system.
Claim 2
Dependent Claim
96 words
An exposure apparatus comprising: a projection optical system for projecting a pattern of a reticle onto a substrate, said exposure apparatus exposing the substrate via a liquid supplied in a space between the projection optical system and the substrate; a first gas supply port for supplying a first gas to a circumference of the liquid; and a second gas supply port for supplying a second gas different from the first gas, the second gas supply port being arranged outer than the first gas supply port with respect to an optical axis of said projection optical system.
Claim 3
Dependent Claim
66 words
An exposure apparatus according to claim 1 , further comprising: a first gas recovery port for recovering the first gas, the first gas recovery port being arranged inner than the first gas supply port with respect to the optical axis; and a second gas recovery port for recovering the second gas, the second gas recovery port being arranged between the first and second gas supply ports.
Claim 4
Dependent Claim
70 words
An exposure apparatus according to claim 1 , further comprising: a first gas recovery port for recovering the first gas, the first gas recovery port being arranged inner than the first gas supply port with respect to the optical axis; and a second gas recovery port for recovering the second gas, the second gas recovery port being arranged outside the second gas supply port with respect to the optical axis.
Claim 5
Dependent Claim
57 words
An exposure apparatus according to claim 1 , wherein the first gas has a composition of a vapor of the same material as the liquid or a vapor of the liquid that evaporates, and wherein a concentration of the vapor contained in the first gas is higher than that of the vapor contained in the second gas.
Claim 6
Dependent Claim
32 words
An exposure apparatus according to claim 1 , wherein a partial pressure of oxygen contained in the first gas is lower than a partial pressure of oxygen contained in the second gas.
Claim 7
Dependent Claim
35 words
An exposure apparatus according to claim 1 , further comprising a stage for supporting the substrate, wherein the second gas has a composition of an atmosphere of a space in which the stage is arranged.
Claim 8
Dependent Claim
121 words
A semiconductor device manufacturing method comprising the steps of: exposing a substrate using an exposure apparatus that includes a projection optical system for projecting a pattern of a reticle onto a substrate, a first gas supply port for supplying a first gas to a circumference of the liquid, and a second gas supply port for supplying a second gas different from the first gas, wherein the second gas supply port is arranged outer than the first gas supply port with respect to an optical axis of said projection optical system, and wherein said exposure apparatus exposes the substrate via a liquid supplied in a space between the projection optical system and the substrate; and developing the substrate that has been exposed.
Claim 9
Dependent Claim
121 words
A semiconductor device manufacturing method comprising the steps of: exposing a substrate using an exposure apparatus that includes a projection optical system for projecting a pattern of a reticle onto a substrate, a first gas supply port for supplying a first gas to a circumference of the liquid, and a second gas supply port for supplying a second gas different from the first gas, wherein the second gas supply port is arranged outer than the first gas supply port with respect to an optical axis of said projection optical system, and wherein said exposure apparatus exposes the substrate via a liquid supplied in a space between the projection optical system and the substrate; and developing the substrate that has been exposed.
Claim 10
Dependent Claim
78 words
A semiconductor device manufacturing method as claimed in claim 7 , wherein the exposure apparatus used to expose the substrate further includes: a first gas recovery port for recovering the first gas, the first gas recovery port being arranged inner than the first gas supply port with respect to the optical axis; and a second gas recovery port for recovering the second gas, the second gas recovery port being arranged between the first and second gas supply ports.
Claim 11
Dependent Claim
82 words
A semiconductor device manufacturing method as claimed in claim 7 , wherein the exposure apparatus used to expose the substrate further includes: a first gas recovery port for recovering the first gas, the first gas recovery port being arranged inner than the first gas supply port with respect to the optical axis; and a second gas recovery port for recovering the second gas, the second gas recovery port being arranged outside the second gas supply port with respect to the optical axis.
Claim 12
Dependent Claim
60 words
A semiconductor device manufacturing method as claimed in claim 7 , wherein the first gas has a composition of a vapor of the same material as the liquid or a vapor of the liquid that evaporates, and wherein a concentration of the vapor contained in the first gas is higher than that of the vapor contained in the second gas.
Claim 13
Dependent Claim
35 words
A semiconductor device manufacturing method as claimed in claim 7 , wherein a partial pressure of oxygen contained in the first gas is lower than a partial pressure of oxygen contained in the second gas.
Claim 14
Dependent Claim
30 words
A semiconductor device manufacturing method as claimed in claim 7 , wherein the second gas has a composition of an atmosphere of a space in which the stage is arranged.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2014-03-14 | 2014-09-13 | 2015-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2018-03-14 | 2018-09-13 | 2019-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2022-03-14 | 2022-09-13 | 2023-03-15 | $7700.00 | Window Closed / Lapsed |