US7906802B2
Active / In Force
US
⏱️ 2.3 years remaining
Semiconductor element and a method for producing the same
Assignee: Infineon Technologies AG
•
Filing: 2009-01-28
•
Granted: 2011-03-15
•
Expires: 2029-01-28
Abstract
Abstract Some embodiments comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins. At least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Inventors
- 👤 Peter Baumgartner
- 👤 Domagoj Siprak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:12
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H03; H03B; H03B5/00; H03B5/08; H03B5/12; H03B5/1228; H03B5/1237; H03B5/124; H03B5/1246; H03B5/1253; H10D30/00; H10D30/01; H10D30/021; H10D30/024; H10D30/0245; H10D30/60; H10D30/62; H10D30/6217; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/834
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
64 words
A semiconductor element, comprising: a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins, and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 2
Dependent Claim
64 words
A semiconductor element, comprising: a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins, and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 3
Dependent Claim
26 words
The semiconductor element according to claim 1 , wherein the plurality of fins are arranged at least on one substrate or on at least two substrates.
Claim 4
Dependent Claim
45 words
The semiconductor element according to claim 1 , wherein the second fin comprises a different fin width compared to a fin width of another fin of the plurality of fins and a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 5
Dependent Claim
42 words
The semiconductor element according to claim 1 , wherein the first fin comprises at least a first segment, and wherein the fin width along the first segment is different compared to the fin width of another fin of the plurality of fins.
Claim 6
Dependent Claim
43 words
The semiconductor element according to claim 1 , wherein the first fin comprises at least a first segment; and wherein the fin width along the first segment is different from a fin width of at least a second segment of the first fin.
Claim 7
Dependent Claim
21 words
The semiconductor element according to claim 5 , wherein the fin width varies continuously along the length of the first segment.
Claim 8
Dependent Claim
24 words
The semiconductor element according to claim 1 , wherein the first fin comprises a fin width gradually changing along the length of the fin.
Claim 9
Dependent Claim
38 words
The semiconductor element according to claim 1 , wherein at least one of the top wall and side wall of the second fin comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 10
Dependent Claim
53 words
The semiconductor element according to claim 1 , wherein the second fin has a <100> top wall crystal surface orientation and a <110> side wall crystal surface orientation and wherein another fin of the plurality of fins has a <100> top wall crystal surface orientation and a <100> side wall crystal surface orientation.
Claim 11
Dependent Claim
53 words
The semiconductor element according to claim 1 , wherein the second fin has a <100> top wall crystal surface orientation and a <100> side wall crystal surface orientation and wherein another fin of the plurality of fins has a <100> top wall crystal surface orientation and a <110> side wall crystal surface orientation.
Claim 12
Dependent Claim
30 words
The semiconductor element according to claim 1 , wherein at least the first and the second fin comprises a source region and a drain region separated by a channel region.
Claim 13
Dependent Claim
55 words
The semiconductor element according to claim 1 , wherein the channel region is at least partly covered with a gate dielectric and the gate dielectric is at least partly covered with a gate electrode, so that a fin-field-effect-transistor (FIN-FET) is formed and a current flow through the channel region is controllable by the gate electrode.
Claim 14
Dependent Claim
42 words
Semiconductor element according to claim 12 , wherein the fin width of the first fin is configured so that a transistor threshold voltage for the first fin is different from the transistor threshold voltage for another fin of the plurality of fins.
Claim 15
Independent Claim
155 words
A device, comprising: a plurality of fins arranged on a substrate, wherein at least a first fin of the plurality of fins comprises a different fin width compared to another fin of the plurality of fins, and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins; source regions with a source electrode and drain regions with a drain electrode separated by channel regions formed in the first and the second fin of the plurality of fins, wherein the source regions and the drain regions comprise a different type of conductivity compared to the channel region; a gate dielectric covering at least a part of the channel regions; and a gate electrode covering at least a part of the gate dielectric configured to control a current flow in the channel regions by a voltage applied at the gate electrode.
Claim 16
Independent Claim
155 words
A device, comprising: a plurality of fins arranged on a substrate, wherein at least a first fin of the plurality of fins comprises a different fin width compared to another fin of the plurality of fins, and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins; source regions with a source electrode and drain regions with a drain electrode separated by channel regions formed in the first and the second fin of the plurality of fins, wherein the source regions and the drain regions comprise a different type of conductivity compared to the channel region; a gate dielectric covering at least a part of the channel regions; and a gate electrode covering at least a part of the gate dielectric configured to control a current flow in the channel regions by a voltage applied at the gate electrode.
Claim 17
Dependent Claim
20 words
The device according to claim 14 , wherein the device is either a silicon-on-insulator fin-field-effect transistor (SOI-FIN-FET) or a bulk-FIN-FET.
Claim 18
Dependent Claim
33 words
The device according to claim 14 , wherein at least one fin of the plurality of fins comprises a body-contact connecting a part of the fin under the channel region to the substrate.
Claim 19
Dependent Claim
23 words
The device according to claim 14 , wherein the source region and the drain region are connected, so that a varactor is formed.
Claim 20
Dependent Claim
44 words
The device according to claim 14 , wherein the second fin comprises a different fin width compared to a fin width of another fin of the plurality of fins and a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 21
Dependent Claim
24 words
The device according to claim 14 , wherein the plurality of fins form a N-metal-oxide-semiconductor FIN-FET (NMOS FIN-FET) or a P-metal-oxide-semiconductor FIN-FET (PMOS FIN-FET).
Claim 22
Dependent Claim
42 words
The device according to claim 14 , wherein the fin width of the first fin is configured so that a transistor threshold voltage for the first fin is different from a transistor threshold voltage of another fin of the plurality of fins.
Claim 23
Dependent Claim
19 words
The device according to claim 14 , wherein the plurality of fins are coupled in parallel or in series.
Claim 24
Dependent Claim
67 words
The FIN-FET according to claim 14 , wherein the first fin comprises at least a first channel region segment, with a fin width along the first channel region segment, different from a fin width of a at least second channel region segment of the first fin, so that the first channel region segment and the second channel region segment are forming two channel region coupled in series.
Claim 25
Dependent Claim
37 words
The device according to claim 14 , wherein at least one of the top wall and side wall of the second fin comprises a different crystal surface orientation compared to another fin of the plurality of fins.
Claim 26
Dependent Claim
136 words
An integrated circuit, comprising: a first fin-field-effect-transistor (FIN-FET) and a second FIN-FET, wherein the FIN-FETs comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to another fin of the plurality of fins and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins; source regions with a source electrode and drain regions with a drain electrode separated by channel regions formed in at least one fin of the first FIN-FET and in at least one fin of the plurality of fins; a gate dielectric covering at least a part of the channel; and at least a gate electrode covering at least a part of the gate dielectric.
Claim 27
Dependent Claim
136 words
An integrated circuit, comprising: a first fin-field-effect-transistor (FIN-FET) and a second FIN-FET, wherein the FIN-FETs comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to another fin of the plurality of fins and wherein at least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins; source regions with a source electrode and drain regions with a drain electrode separated by channel regions formed in at least one fin of the first FIN-FET and in at least one fin of the plurality of fins; a gate dielectric covering at least a part of the channel; and at least a gate electrode covering at least a part of the gate dielectric.
Claim 28
Dependent Claim
36 words
The integrated circuit according to claim 24 , wherein the plurality of fins are arranged at least on one substrate and wherein the first FIN-FET and the second FIN-FET are connected in series or in parallel.
Claim 29
Dependent Claim
29 words
The integrated circuit according to claim 24 , wherein said first FIN-FET is a SOI-FIN-FET or a bulk-FIN-FET, and wherein said second FIN-FET is a SOI-FIN-FET or a bulk-FIN-FET.
Claim 30
Dependent Claim
38 words
The integrated circuit according to claim 24 , wherein at least one fin of the plurality of fins of the first FIN-FET comprises a body-contact connecting a part of the fin under the channel region to the substrate.
References Cited (Backward Citations)
US20050269629A1
Cited
US20070045736A1
Cited
US20080121948A1
Cited
US20080054361A1
Cited
US20080122015A1
Cited
DE102007056741A1
Cited
US20080169495A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2014-03-14 | 2014-09-13 | 2015-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2018-03-14 | 2018-09-13 | 2019-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2022-03-14 | 2022-09-13 | 2023-03-15 | $7700.00 | Window Closed / Lapsed |