Fabrication method of semiconductor device

Claim 1

A fabrication method of a semiconductor device, comprising the steps of: providing a substrate and a semiconductor chip, wherein the substrate has a first surface with a plurality of electrical connection pads, and the first surface is covered with an insulative layer, the insulative layer having an opening formed to expose the electrical connection pads, and the semiconductor chip having an active surface with a plurality of bumps and a non-active surface; forming a filling material on the first surface of the substrate; and compressing the semiconductor chip to the substrate with the bumps electrically connected with the electrical connection pads, the filling material filling gaps between the semiconductor chip and the substrate, thereby obtaining the semiconductor device, wherein the step of forming the filling material comprises the steps of: disposing a template on the insulative layer on the first surface of the substrate, wherein the template has at least two openings formed to expose a surface of the insulative layer and the two openings are respectively located at two sides of the opening of the insulative layer; forming the filling material in the openings of the template; and removing the template so as to form the filling material on the insulative layer and expose the opening of the insulative layer of the substrate, and then heating and baking the filling material, wherein a side of the filling material facing the opening of the insulative layer has a tip end formed at a central portion thereof so as to make the filling material flow quickly towards the opening.