US7374618B2
Expired / Lapsed
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Group III nitride semiconductor substrate
Assignee: Sumitomo Chemical Co Ltd
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Filing: 2006-02-17
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Granted: 2008-05-20
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Expires: 2026-02-17
Abstract
Abstract A GaN substrate 1 , a group III nitride semiconductor substrate, is provided with an OF portion 2 for the periphery thereof. The bevel 7 on the periphery of the nitric polarity face 5 side of the GaN substrate 1 is provided throughout the entire periphery of the GaN substrate 1 including the OF portion 2 , wherein the beveling angle θ 2 of the bevel 7 is given a value in the range over 30° to 60° inclusive.
Inventors
- 👤 Takehiro Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:37
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/128; C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/403
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
90 words
A group III nitride semiconductor substrate having beveled portions on both a group III polarity face and a nitric polarity face at the periphery of an arc part of said substrate, and an orientation flat portion, wherein the entire periphery of the orientation flat portion of the nitric polarity face is beveled, the orientation flat portion of said group III polarity face has at least one part which is not beveled, and said group III polarity face is orthogonal to said orientation flat face at said at least one part.
Claim 2
Dependent Claim
90 words
A group III nitride semiconductor substrate having beveled portions on both a group III polarity face and a nitric polarity face at the periphery of an arc part of said substrate, and an orientation flat portion, wherein the entire periphery of the orientation flat portion of the nitric polarity face is beveled, the orientation flat portion of said group III polarity face has at least one part which is not beveled, and said group III polarity face is orthogonal to said orientation flat face at said at least one part.
Claim 3
Dependent Claim
38 words
The group III nitride semiconductor substrate according to claim 1 , wherein a transition portion between the side face of the arc part and said orientation flat portion in said substrate is connected smoothly without any angular irregularity.
Claim 4
Dependent Claim
31 words
The group III nitride semiconductor substrate according to claim 1 , wherein said substrate is comprised of any one of material selected from a group consisting of GaN, AlN and InN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2011-05-20 | 2011-11-19 | 2012-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2015-05-20 | 2015-11-19 | 2016-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2019-05-20 | 2019-11-19 | 2020-05-20 | $7700.00 | Window Closed / Lapsed |