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US7294540B2
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Method for manufacturing a nitride based semiconductor device
Assignee: Samsung Electro Mechanics Co Ltd
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Filing: 2005-03-31
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Granted: 2007-11-13
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Expires: 2025-03-31
Abstract
Abstract Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.
Inventors
- 👤 Jae Hoon Lee
- 👤 Jung Hee Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:34
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/05; H03H9/0538; H03H9/0542; H10; H10D; H10D30/00; H03H3/00; H03H3/007; H03H3/08; H03H9/46; H03H9/64; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10D84/00; H10D84/01; H10P; H10P10/00; H10D62/00; H10D62/80; H10D62/85; H10D62/8503
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A method for manufacturing a nitride-based semiconductor device, comprising the steps of: forming a semi-insulating GaN layer on a substrate; forming a protective layer on one side of the semi-insulating GaN layer on which a surface acoustic wave filter is to be formed; forming an AlGaN layer on the other side of the semi-insulating GaN layer on which a heterostructure field effect transistor is to be formed; removing the protective layer by wet etching; and forming a plurality of electrodes for a heterostructure field effect transistor on the AlGaN layer, and forming a plurality of electrodes for a surface acoustic wave filter on the region of the semi-insulating GaN layer where the protective layer is removed.
Claim 2
Independent Claim
116 words
A method for manufacturing a nitride-based semiconductor device, comprising the steps of: forming a semi-insulating GaN layer on a substrate; forming a protective layer on one side of the semi-insulating GaN layer on which a surface acoustic wave filter is to be formed; forming an AlGaN layer on the other side of the semi-insulating GaN layer on which a heterostructure field effect transistor is to be formed; removing the protective layer by wet etching; and forming a plurality of electrodes for a heterostructure field effect transistor on the AlGaN layer, and forming a plurality of electrodes for a surface acoustic wave filter on the region of the semi-insulating GaN layer where the protective layer is removed.
Claim 3
Dependent Claim
25 words
The method according to claim 1 , wherein the electrodes for a heterostructure field effect transistor are formed before the removal of the protective layer.
Claim 4
Dependent Claim
25 words
The method according to claim 1 , wherein the electrodes for a heterostructure field effect transistor are formed after the removal of the protective layer.
Claim 5
Dependent Claim
76 words
The method according to claim 1 , wherein the step of forming the semi-insulating GaN layer includes the sub-steps of: growing a GaN layer at a first growth temperature (a first growth step); further growing the GaN layer at increasing temperatures from the first growth temperature to a second growth temperature higher than the first growth temperature (a second growth step); and further growing the GaN layer at the second growth temperature (a third growth step).
Claim 6
Dependent Claim
35 words
The method according to claim 4 , wherein the first growth temperature is between about 800° C. and about 950° C., and the second growth temperature is between about 1,000° C. and about 1,100° C.
Claim 7
Dependent Claim
51 words
The method according to claim 1 , further comprising the step of, after the formation of the protective layer and prior to the formation of the AlGaN layer, forming an Al-doped GaN layer on a region of the semi-insulating GaN layer where a heterostructure field effect transistor is to be formed.
Claim 8
Dependent Claim
39 words
The method according to claim 6 , further comprising the step of, after the formation of the Al-doped GaN layer and prior to the formation of the AlGaN layer, forming an undoped GaN layer on the Al-doped GaN layer.
Claim 9
Dependent Claim
20 words
The method according to claim 1 , wherein the protective layer is made of a silicon oxide or nitride film.
Claim 10
Dependent Claim
27 words
The method according to claim 1 , further comprising the step of forming a buffer layer on the substrate before the formation of the semi-insulating GaN layer.
References Cited (Backward Citations)
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