US7153786B2
Expired / Lapsed
US
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Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2005-01-12
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Granted: 2006-12-26
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Expires: 2025-01-12
Abstract
Abstract Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
Inventors
- 👤 Jong-Pyo Kim
- 👤 Jung-hyun Lee
- 👤 Bum-seok Seo
- 👤 Jung-Hyoung Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:58
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; F; F21; F21V; F21V17/00; F21V17/10; F21V17/12; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; F21W; F21W2131/00; F21W2131/10; F21W2131/101; H10P14/668; H10P14/69395; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
114 words
A method of fabricating a lanthanum oxide layer in a semiconductor device comprising the sequential steps of: a) disposing a semiconductor substrate into a chamber; b) injecting a lanthanum precursor into the chamber such that a layer of the lanthanum precursor is chemisorbed on the semiconductor substrate, wherein the lanthanum precursor consists essentially of tris(bis(trimethylsilyl)amino)Lanthanum; c) conducting a first purge of the chamber; d) injecting at least one oxidizer into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate; e) conducting a second purge of the chamber; and, f) repeating steps (b) through (e) until a lanthanum oxide layer of a desired multi-atomic layer thickness is obtained.
Claim 2
Independent Claim
114 words
A method of fabricating a lanthanum oxide layer in a semiconductor device comprising the sequential steps of: a) disposing a semiconductor substrate into a chamber; b) injecting a lanthanum precursor into the chamber such that a layer of the lanthanum precursor is chemisorbed on the semiconductor substrate, wherein the lanthanum precursor consists essentially of tris(bis(trimethylsilyl)amino)Lanthanum; c) conducting a first purge of the chamber; d) injecting at least one oxidizer into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate; e) conducting a second purge of the chamber; and, f) repeating steps (b) through (e) until a lanthanum oxide layer of a desired multi-atomic layer thickness is obtained.
Claim 3
Dependent Claim
30 words
The method according to claim 1 , wherein the step of injecting the lanthanum precursor into the chamber is performed using a bubbler type technique or an injector type technique.
Claim 4
Dependent Claim
37 words
The method according to claim 2 , wherein an injector type technique is used and the solution for dissolving the lanthanum precursor is at least one member selected from the group consisting of THF, THP and TFP.
Claim 5
Dependent Claim
33 words
The method according to claim 1 , wherein the first purge step and the second purge step are performed by passing an inert gas or a nitrogen gas into and through the chamber.
Claim 6
Dependent Claim
39 words
The method according to claim 1 , wherein the oxidizer is at least one member selected from the group consisting of H 2 O, H 2 O 2 , O 3 , O 2 , and N 2 O.
Claim 7
Dependent Claim
22 words
The method according to claim 5 , wherein the oxidizer is activated through a plasma treatment or a ultraviolet ray irradiation treatment.
Claim 8
Dependent Claim
63 words
The method according to claim 1 , wherein the step of injecting the at least one oxidizer into the chamber comprises the sequential steps of: injecting a first oxidizer that includes an —OH group into the chamber; purging the chamber using an inert gas or a nitrogen gas; and injecting a second oxidizer that includes O 3 or O 2 into the chamber.
Claim 9
Dependent Claim
23 words
The method according to claim 7 , wherein the first oxidizer is H 2 O and the second oxidizer is O 3 .
Claim 10
Independent Claim
73 words
A method of fabricating a MOSFET for semiconductor applications comprising the sequential steps of: forming an isolation layer to define an active region in a semiconductor substrate; forming a gate dielectric layer that includes a lanthanum oxide layer on the active region, wherein the lanthanum oxide layer is formed by an ALD technique using tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor; and forming a gate electrode crossing the active region on the gate dielectric layer.
Claim 11
Independent Claim
73 words
A method of fabricating a MOSFET for semiconductor applications comprising the sequential steps of: forming an isolation layer to define an active region in a semiconductor substrate; forming a gate dielectric layer that includes a lanthanum oxide layer on the active region, wherein the lanthanum oxide layer is formed by an ALD technique using tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor; and forming a gate electrode crossing the active region on the gate dielectric layer.
Claim 12
Dependent Claim
22 words
The method according to claim 9 , wherein the gate dielectric layer consists of a single layer of a lanthanum oxide layer.
Claim 13
Dependent Claim
27 words
The method according to claim 9 , wherein the gate dielectric layer consists of stacked layers including at least a lanthanum oxide layer and a dielectric layer.
Claim 14
Dependent Claim
56 words
The method according to claim 11 , wherein the dielectric layer is a layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a hafnium oxide layer, a zirconium oxide layer, a tantalum oxide layer, a titanium oxide layer, and a stacked layer consisting of combinations thereof.
Claim 15
Dependent Claim
29 words
The method according to claim 9 , further comprising a step of performing an annealing process on the gate dielectric layer before the step of forming the gate electrode.
Claim 16
Dependent Claim
23 words
The method according to claim 13 , wherein the annealing process is performed under vacuum or in the presence of an inert gas.
Claim 17
Dependent Claim
34 words
The method according to claim 13 , wherein the annealing process is performed at a temperature of about 300 to 900° C. and at a pressure equal to or less than 10 −3 Torr.
Claim 18
Dependent Claim
32 words
The method according to claim 9 , further comprising a step of forming source/drain regions in the active region adjacent to the gate electrode after the step of forming the gate electrode.
Claim 19
Independent Claim
60 words
A method of fabricating a capacitor for semiconductor applications comprising the sequential steps of: forming a lower electrode; forming a capacitor dielectric layer that includes a lanthanum oxide layer on the lower electrode, wherein the lanthanum oxide layer is formed by an ALD technique using tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor; and forming an upper electrode on the capacitor dielectric layer.
Claim 20
Independent Claim
60 words
A method of fabricating a capacitor for semiconductor applications comprising the sequential steps of: forming a lower electrode; forming a capacitor dielectric layer that includes a lanthanum oxide layer on the lower electrode, wherein the lanthanum oxide layer is formed by an ALD technique using tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor; and forming an upper electrode on the capacitor dielectric layer.
Claim 21
Dependent Claim
32 words
The method according to claim 17 , wherein the lower electrode is formed as a structure selected from the group consisting of a stack structure, a cylinder structure, and a concave structure.
Claim 22
Dependent Claim
49 words
The method according to claim 17 , wherein the lower electrode consists of a conductive layer selected from the group consisting of a metal layer, a metal nitride layer, a metal oxide layer, a metal oxynitride layer, an impurity-doped polysilicon layer, and a stacked layer consisting of combinations thereof.
Claim 23
Dependent Claim
22 words
The method according to claim 17 , wherein the capacitor dielectric layer consists of a single layer of a lanthanum oxide layer.
Claim 24
Dependent Claim
27 words
The method according to claim 17 , wherein the capacitor dielectric layer consists of stacked layers including at least a lanthanum oxide layer and a dielectric layer.
Claim 25
Dependent Claim
56 words
The method according to claim 21 , wherein the dielectric layer is a layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a hafnium oxide layer, a zirconium oxide layer, a tantalum oxide layer, a titanium oxide layer, and a stacked layer consisting of combinations thereof.
Claim 26
Dependent Claim
49 words
The method according to claim 17 , wherein the upper electrode consists of a conductive layer selected from the group consisting of a metal layer, a metal nitride layer, a metal oxide layer, a metal oxynitride layer, an impurity-doped polysilicon layer, and a stacked layer consisting of combinations thereof.
Claim 27
Dependent Claim
34 words
The method according to claim 17 , further comprising a step of forming a reaction barrier layer on the lower electrode before the step of forming the dielectric layer including a lanthanum oxide layer.
Claim 28
Dependent Claim
35 words
The method according to claim 24 , wherein the reaction barrier layer is formed by treating the lower electrode by means of an RTN (rapid thermal nitridation) process or an RTO (rapid thermal oxidation) process.
Claim 29
Dependent Claim
32 words
The method according to claim 24 , wherein the reaction barrier layer is formed of a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer using a CVD method.
Claim 30
Dependent Claim
29 words
The method according to claim 17 , further comprising a step of performing an annealing process on the capacitor dielectric layer before the step of forming the upper electrode.
Claim 31
Dependent Claim
23 words
The method according to claim 27 , wherein the annealing process is performed under vacuum or in the presence of an inert gas.
Claim 32
Dependent Claim
34 words
The method according to claim 27 , wherein the annealing process is performed at a temperature of about 300 to 900° C. and at a pressure equal to or less than 10 −3 Torr.
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