US7129024B2
Expired / Lapsed
US
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Electron beam lithography method
Assignee: Samsung Electronics Co Ltd
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Filing: 2003-07-22
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Granted: 2006-10-31
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Expires: 2023-07-22
Abstract
Abstract An electron beam lithography method includes extending the widths of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the boundaries of the stripes overlap adjacent stripes at each boundary, and sequentially exposing each of the stripes to an electron beam.
Inventors
- 👤 Won-tai Ki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:53
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/22; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; B; B82; B82Y; B82Y10/00; B82Y40/00; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
An electron beam lithography method comprising: extending widths of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the stripes overlap adjacent stripes at boundaries between the stripes, wherein the scan dose of the electron beam for the extended region of a stripe is less than the scan dose of the electron beam for a non-extended region of the stripe, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe and has at least two intermediate steps between the electron beam for a non-extended region of the stripe and a zero scan dose; and sequentially performing electron beam exposure for each of the stripes.
Claim 2
Dependent Claim
130 words
An electron beam lithography method comprising: extending widths of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the stripes overlap adjacent stripes at boundaries between the stripes, wherein the scan dose of the electron beam for the extended region of a stripe is less than the scan dose of the electron beam for a non-extended region of the stripe, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe and has at least two intermediate steps between the electron beam for a non-extended region of the stripe and a zero scan dose; and sequentially performing electron beam exposure for each of the stripes.
Claim 3
Dependent Claim
46 words
The electron beam lithography method of claim 1 , wherein the scan dose of the electron beam for the extended region of a stripe has at least three intermediate steps between the electron beam dose for a non-extended region of the stripe and zero scan dose.
Claim 4
Dependent Claim
46 words
The electron beam lithography method of claim 2 , wherein the scan dose of the electron beam for at least one intermediate step for the extended region of a stripe is half the scan dose of the electron beam for the non-extended region of the stripe.
Claim 5
Dependent Claim
52 words
The electron beam lithography method of claim 2 , further comprising performing a second electron beam lithography step that includes extending widths of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the stripes overlap adjacent stripes at boundaries between the stripes.
Claim 6
Dependent Claim
146 words
An electron beam lithography method comprising: performing a first electron beam exposure by extending a width of a first stripe of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the stripes overlap adjacent stripes at boundaries between the stripes, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe; sequentially performing a second electron beam exposure by extending the width of a second stripe of a plurality of second stripes which divide the region where the electron beam exposure is to be performed, wherein the extended regions of the first and second beam exposures are staggered with respect to one another such that the extended region of the first exposure falls within the non-extended region of the second exposure.
Claim 7
Dependent Claim
146 words
An electron beam lithography method comprising: performing a first electron beam exposure by extending a width of a first stripe of a plurality of stripes which divide a region where an electron beam exposure is to be performed, so that the stripes overlap adjacent stripes at boundaries between the stripes, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe; sequentially performing a second electron beam exposure by extending the width of a second stripe of a plurality of second stripes which divide the region where the electron beam exposure is to be performed, wherein the extended regions of the first and second beam exposures are staggered with respect to one another such that the extended region of the first exposure falls within the non-extended region of the second exposure.
Claim 8
Dependent Claim
45 words
The electron beam lithography method of claim 5 , wherein the scan dose of the electron beam for the extended region of a stripe has at least two intermediate steps between the electron beam for a non-extended region of the stripe and zero scan dose.
Claim 9
Dependent Claim
46 words
The electron beam lithography method of claim 5 , wherein a scan dose of the electron beam for at least one intermediate step for the extended region of a stripe is half the scan dose of the electron beam for the non-extended region of the stripe.
Claim 10
Dependent Claim
21 words
The method of claim 6 , wherein the first and second electron beam exposures are performed at half a target dose.
Claim 11
Dependent Claim
127 words
An electron beam lithography method comprising: sequentially performing a first electron beam exposure on each stripe of a plurality of stripes which divide a region where an electron beam exposure is to be performed, wherein each stripe has an extended width so that each stripe overlaps adjacent stripes at boundaries between each of the stripes, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe; moving overlap regions of the stripes by moving the stripes; and sequentially performing a second electron beam exposure for each of the moved stripes in a manner such that such that extended regions of the first exposure fall within the non-extended regions of the second exposure.
Claim 12
Dependent Claim
127 words
An electron beam lithography method comprising: sequentially performing a first electron beam exposure on each stripe of a plurality of stripes which divide a region where an electron beam exposure is to be performed, wherein each stripe has an extended width so that each stripe overlaps adjacent stripes at boundaries between each of the stripes, and wherein the scan dose of the electron beam for the extended region of a stripe is reduced in a stepwise manner toward an adjacent stripe; moving overlap regions of the stripes by moving the stripes; and sequentially performing a second electron beam exposure for each of the moved stripes in a manner such that such that extended regions of the first exposure fall within the non-extended regions of the second exposure.
Claim 13
Dependent Claim
45 words
The electron beam lithography method of claim 9 , wherein the scan dose of the electron beam for the extended region of a stripe has at least three intermediate steps between the electron beam for a non-extended region of the stripe and zero scan dose.
Claim 14
Dependent Claim
46 words
The electron beam lithography method of claim 10 , wherein the scan dose of the electron beam for at least one intermediate step for the extended region of a stripe is half the scan dose of the electron beam for the non-extended region of the stripe.
Claim 15
Dependent Claim
45 words
The electron beam lithography method of claim 10 , wherein the scan dose of the electron beam for the extended region of a stripe has at least two intermediate steps between the electron beam for a non-extended region of the stripe and zero scan dose.
Claim 16
Dependent Claim
24 words
The electron beam lithography method of claim 9 , wherein the first and second electron beam exposures are performed at half a target dose.
References Cited (Backward Citations)
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