US7030468B2
Expired / Lapsed
US
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Low k and ultra low k SiCOH dielectric films and methods to form the same
Assignee: GlobalFoundries US Inc
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Filing: 2004-01-16
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Granted: 2006-04-18
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Expires: 2024-01-16
Abstract
Abstract Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.
Inventors
- 👤 Stephen M. Gates
- 👤 Christos D. Dimitrakopoulos
- 👤 Alfred Grill
- 👤 Son Van Nguyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/56; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/6538; H10P14/6539; H10P14/6548; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/47; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
57 words
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa, said dielectric material has a covalently bonded tri-dimensional network structure.
Claim 2
Dependent Claim
57 words
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa, said dielectric material has a covalently bonded tri-dimensional network structure.
Claim 3
Dependent Claim
22 words
The dielectric material of claim 1 wherein said material has a cohesive strength from about 1.7 to about 4.5 J/m 2 .
Claim 4
Dependent Claim
34 words
The dielectric material of claim 1 wherein said material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness from about 1.1 to about 2.8 microns.
Claim 5
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.7, the tensile stress is less than 45 MPa, the elastic modulus is from about 9 to about 15 GPa, and the hardness is from about 0.5 to about 2 GPa.
Claim 6
Dependent Claim
22 words
The dielectric material of claim 4 wherein said material has a cohesive strength from about 4.0 to about 4.5 J/m 2 .
Claim 7
Dependent Claim
30 words
The dielectric material of claim 4 wherein said material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 2.8 microns.
Claim 8
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.6, the tensile stress is less than 45 MPa, the elastic modulus is from about 8 to about 13 GPa, and the hardness is from about 0.4 to about 1.9 GPa.
Claim 9
Dependent Claim
22 words
The dielectric material of claim 7 wherein the material has a cohesive strength from about 4.0 to about 4.5 J/m 2 .
Claim 10
Dependent Claim
30 words
The dielectric material of claim 7 wherein the material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 2.7 microns.
Claim 11
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.5, the tensile stress is less than 45 MPa, the elastic modulus is from about 7 to about 12 GPa, and the hardness is from about 0.35 to about 1.8 GPa.
Claim 12
Dependent Claim
22 words
The dielectric material of claim 10 wherein the material has a cohesive strength from about 2.5 to about 3.9 J/m 2 .
Claim 13
Dependent Claim
30 words
The dielectric material of claim 10 wherein the material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 2.5 microns.
Claim 14
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.4, the tensile stress is less than 40 MPa, the elastic modulus is from about 6 to about 11 GPa, and the hardness is from about 0.3 to about 1.7 GPa.
Claim 15
Dependent Claim
22 words
The dielectric material of claim 13 wherein the material has a cohesive strength from about 2.4 to about 3.8 J/m 2 .
Claim 16
Dependent Claim
30 words
The dielectric material of claim 13 wherein said material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 2.3 microns.
Claim 17
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.3, the tensile stress is less than 40 MPa, the elastic modulus is from about 5 to about 10 GPa, and the hardness is from about 0.25 to about 1.6 GPa.
Claim 18
Dependent Claim
21 words
The dielectric material of claim 16 wherein material has a cohesive strength from about 2.2 to about 3.7 J/m 2 .
Claim 19
Dependent Claim
30 words
The dielectric material of claim 16 wherein said material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 1.9 microns.
Claim 20
Dependent Claim
42 words
The dielectric material of claim 1 wherein the dielectric constant is 2.2, the tensile stress is less than 40 MPa, the elastic modulus is from about 4 to about 9 GPa, and the hardness is from about 0.2 to about 1.5 GPa.
Claim 21
Dependent Claim
22 words
The dielectric material of claim 19 wherein the material has a cohesive strength from about 2.0 to about 3.5 J/m 2 .
Claim 22
Dependent Claim
30 words
The dielectric material of claim 19 wherein the material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 1.5 microns.
Claim 23
Dependent Claim
45 words
The dielectric material of claim 1 wherein the dielectric constant is 2.1, the tensile stress is from about 20 to about 35 MPa, the elastic modulus is from about 3 to about 8 GPa, and the hardness is from about 0.2 to about 1.4 GPa.
Claim 24
Dependent Claim
22 words
The dielectric material of claim 22 wherein the material has a cohesive strength from about 1.8 to about 3.4 J/m 2 .
Claim 25
Dependent Claim
30 words
The dielectric material of claim 22 wherein the material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 1.3 microns.
Claim 26
Dependent Claim
40 words
The dielectric material of claim 1 wherein the dielectric constant is 2.0, the tensile stress is from about 20 to about 35 MPa, the elastic modulus is from about 2 to about 7 GPa, and the hardness is 0.2 GPa.
Claim 27
Dependent Claim
23 words
The dielectric material of claim 25 wherein the material has a cohesive strength is from about 1.7 to about 3.3 J/m 2 .
Claim 28
Dependent Claim
30 words
The dielectric material of claim 25 wherein the material has a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness of 1.1 microns.
Claim 29
Dependent Claim
44 words
The dielectric material of claim 1 wherein said covalently bonded tri-dimensional network structure further comprises Si—O bonds that produce an FTIR absorbance spectrum in which the ratio of the cage Si—O intensity to the network Si—O intensity is decreased using a treatment after deposition.
Claim 30
Dependent Claim
32 words
The dielectric material of claim 28 wherein said treatment uses at least an energy source selected from the group consisting of thermal, chemical, ultraviolet (UV) light, electron beam (e-beam), microwave and plasma.
Claim 31
Dependent Claim
19 words
The dielectric material of claim 1 wherein said material has a water contact angle that is greater than 70°.
Claim 32
Dependent Claim
17 words
The dielectric material of claim 1 wherein said dielectric material further comprises a multiplicity of nanometer-sized pores.
Claim 33
Dependent Claim
66 words
An interconnect structure comprising at least a dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa and wiring regions, said dielectric material has a covalently bonded tri-dimensional network structure.
Claim 34
Dependent Claim
66 words
An interconnect structure comprising at least a dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa and wiring regions, said dielectric material has a covalently bonded tri-dimensional network structure.
Claim 35
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.7, the elastic modulus of the dielectric material is from about 9 to about 15 GPa, and the hardness of the dielectric material is from about 0.5 to about 2 GPa.
Claim 36
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.6, the elastic modulus of the dielectric material is from about 8 to about 13 GPa, and the hardness of the dielectric material is from about 0.4 to about 1.9 GPa.
Claim 37
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.5, the elastic modulus of the dielectric material is from about 7 to about 12 GPa, and the hardness of the dielectric material is from about 0.35 to about 1.8 GPa.
Claim 38
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.4, the elastic modulus of the dielectric material is from about 6 to about 11 GPa, and the hardness of the dielectric material is from about 0.3 to about 1.7 GPa.
Claim 39
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.3, the elastic modulus of the dielectric material is from about 5 to about 10 GPa, and the hardness of the dielectric material is from about 0.25 to about 1.6 GPa.
Claim 40
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.2, the elastic modulus of the dielectric material is from about 4 to about 9 GPa, and the hardness of the dielectric material is from about 0.2 to about 1.5 GPa.
Claim 41
Dependent Claim
46 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.1, the elastic modulus of the dielectric material is from about 3 to about 8 GPa, and the hardness of the dielectric material is from about 0.2 to about 1.4 GPa.
Claim 42
Dependent Claim
56 words
The electronic structure of claim 32 wherein the dielectric constant of the dielectric material is 2.0, the tensile stress of the dielectric material is from about 20 to about 35 MPa, the elastic modulus of the dielectric material is from about 2 to about 7 GPa, and the hardness of the dielectric material is 0.2 GPa.
Claim 43
Dependent Claim
41 words
The electronic structure of claim 32 wherein said dielectric material further comprises Si—O bonds that produce an FTIR absorbance spectrum in which the ratio of the cage Si—O intensity to the network Si—O intensity is decreased using a treatment after deposition.
Claim 44
Dependent Claim
32 words
The electronic structure of claim 41 wherein said treatment uses at least an energy source selected from the group consisting of thermal, chemical, ultraviolet (UV) light, electron beam (e-beam), microwave and plasma.
Claim 45
Dependent Claim
19 words
The electronic structure of claim 32 wherein the dielectric material has a water contact angle of greater than 70°.
Claim 46
Dependent Claim
17 words
The electronic structure of claim 32 wherein said dielectric material further comprises a multiplicity of nanometer-sized pores.
Claim 47
Dependent Claim
83 words
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, a hardness from about 0.2 to about 2 GPa, a cohesive strength from about 1.7 to about 4.5 J/m 2 , and a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness from about 1.1 to about 2.8 microns.
Claim 48
Dependent Claim
83 words
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, a hardness from about 0.2 to about 2 GPa, a cohesive strength from about 1.7 to about 4.5 J/m 2 , and a crack development velocity in water of not more than 1×10 −10 m/sec for a film thickness from about 1.1 to about 2.8 microns.
References Cited (Backward Citations)
US6472306B1
Cited
US20040089470A1
Cited
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