US6930389B2
Expired / Lapsed
US
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Under bump metallization structure of a semiconductor wafer
Assignee: Advanced Semiconductor Engineering Inc
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Filing: 2004-04-09
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Granted: 2005-08-16
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Expires: 2024-04-09
Abstract
Abstract An under bump metallurgy structure is applicable to be disposed above the wafer and on the bonding pads of the wafer. The wafer comprises a passivation layer and an under bump metallurgy structure. The passivation layer exposes the wafer pads, and the under bump metallurgy structure including an adhesive layer, a first barrier layer, a wetting layer and a second barrier layer are sequentially formed on the bonding pads. Specifically, the material of the second barrier mainly includes lead.
Inventors
- 👤 Min-Lung Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:10
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/01; H10W72/012; H10W70/00; H10W70/60; H10W72/20; H10W72/251; H10W72/252; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
79 words
An under bump metallization structure applicable to be disposed on bonding pads of a semiconductor wafer, wherein a passivation layer covers the wafer and exposes the bonding pads, the under bump metallization structure comprising: an adhesive layer formed on the bonding pads; a first barrier layer disposed on the adhesive layer; a wetting layer formed on the first barrier layer; and a second barrier layer disposed on the wetting layer, wherein a material of the second barrier comprises lead.
Claim 2
Dependent Claim
79 words
An under bump metallization structure applicable to be disposed on bonding pads of a semiconductor wafer, wherein a passivation layer covers the wafer and exposes the bonding pads, the under bump metallization structure comprising: an adhesive layer formed on the bonding pads; a first barrier layer disposed on the adhesive layer; a wetting layer formed on the first barrier layer; and a second barrier layer disposed on the wetting layer, wherein a material of the second barrier comprises lead.
Claim 3
Dependent Claim
20 words
The structure of claim 1 , wherein the material of the second barrier layer is made of lead and tin.
Claim 4
Dependent Claim
22 words
The structure of claim 2 , wherein the ratio of the lead and the tin in weight is substantially ninety-five to five.
Claim 5
Dependent Claim
22 words
The structure of claim 2 , wherein the ratio of the lead and the tin in weight is substantially ninety-seven to three.
Claim 6
Dependent Claim
22 words
The structure of claim 2 , wherein the ratio of the lead and the tin in weight is substantially ninety to ten.
Claim 7
Dependent Claim
15 words
The structure of claim 1 , wherein the first barrier layer is a nickel-vanadium layer.
Claim 8
Dependent Claim
14 words
The structure of claim 1 , wherein the wetting layer is a copper layer.
Claim 9
Dependent Claim
14 words
The structure of claim 1 , wherein the wetting layer is a nickel layer.
Claim 10
Dependent Claim
14 words
The structure of claim 1 , wherein the wetting layer is a titanium layer.
Claim 11
Dependent Claim
24 words
The structure of claim 1 , wherein the thickness of the second barrier layer is ranged from about 50 μm to about 80 μm.
References Cited (Backward Citations)
US20040238955A1
Cited
US20030189260A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-08-15 | 2009-02-14 | 2009-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-08-15 | 2013-02-14 | 2013-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-08-15 | 2017-02-14 | 2017-08-16 | $7700.00 | Window Closed / Lapsed |