US6882522B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production method of solid electrolytic capacitor
Assignee: Resonac Holdings Corp
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Filing: 2004-01-30
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Granted: 2005-04-19
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Expires: 2024-01-30
Abstract
Abstract The present invention relates to a method for producing a niobium-oxide solid electrolytic capacitor having an anode being at least one member selected from niobium monoxide, niobium and an alloy mainly comprising niobium, or a mixture of niobium monoxide with niobium or an alloy mainly comprising niobium, which capacitor formed by the electrolytic oxidation (electrochemical formation) of the anode; and the method including sequentially repeating twice or more a step of exposing a dielectric layer to a temperature to 1,000° C. before formation of a cathode and a step of re-electrochemically forming the dielectric layer. The niobium solid electrolytic capacitor obtained by the present invention improved in the leakage current value after mounting and excellent in reliability.
Inventors
- 👤 Kazumi Naito
- 👤 Isao Kabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:46
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/0029; H01G9/0032; H01G11/00; H01G11/22; H01G11/30; H01G11/48; H01G11/54; H01G11/56; H01G9/004; H01G9/022; H01G9/025; H01G9/028; H01G9/04; H01G9/048; H01G9/052; H01G9/0525; Y; Y02; Y02E; Y02E60/00; Y02E60/13
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
114 words
A method for producing a solid electrolytic capacitor comprising an anode, a dielectric layer and a cathode formed on the dielectric layer, the anode being at least one member selected from niobium monoxide, niobium and an alloy mainly comprising niobium, or a mixture of niobium monoxide with niobium or an alloy mainly comprising niobium, the dielectric layer being a layer formed by the electrolytic oxidation (electrochemical formation) of the anode, and the cathode being an organic semiconductor, the method comprising sequentially repeating twice or more a step of exposing the dielectric layer to a temperature of 200 to 1,000° C. before formation of the cathode and a step of re-electrochemically forming the dielectric layer.
Claim 2
Independent Claim
114 words
A method for producing a solid electrolytic capacitor comprising an anode, a dielectric layer and a cathode formed on the dielectric layer, the anode being at least one member selected from niobium monoxide, niobium and an alloy mainly comprising niobium, or a mixture of niobium monoxide with niobium or an alloy mainly comprising niobium, the dielectric layer being a layer formed by the electrolytic oxidation (electrochemical formation) of the anode, and the cathode being an organic semiconductor, the method comprising sequentially repeating twice or more a step of exposing the dielectric layer to a temperature of 200 to 1,000° C. before formation of the cathode and a step of re-electrochemically forming the dielectric layer.
Claim 3
Dependent Claim
38 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the step of exposing the dielectric layer to a temperature of 200 to 1,000° C. is performed in the atmosphere containing water vapor.
Claim 4
Dependent Claim
46 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 or 2 , wherein the step of exposing the dielectric layer to a temperature of 200 to 1,000° C. is performed in the atmosphere containing oxygen gas of 5% by volume or more.
Claim 5
Dependent Claim
33 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 or 2 , wherein the leakage current value of the dielectric layer after re-electrochemical formation is 1 nA/CV or less.
Claim 6
Dependent Claim
182 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the organic semiconductor is at least one selected from an organic semiconductor comprising benzopyrroline tetramer and chloranile, an organic semiconductor mainly comprising tetrathiotetracene, an organic semiconductor mainly comprising tetracyanoquinodimethane, and an organic semiconductor mainly comprising an electrically conducting polymer obtained by doping a dopant to a polymer containing a repeating unit represented by the following formula (1) or (2): wherein R 1 to R 4 , which may be the same or different, each independently represents a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms or an alkoxy group having from 1 to 6 carbon atoms, X represents an oxygen atom, a sulfur atom or a nitrogen atom, R 5 is present only when X is a nitrogen atom, and represents a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and each of the pairs of R 1 and R 2 , and R 3 and R 4 may combine with each other to form a ring structure.
Claim 7
Dependent Claim
125 words
The method for producing a solid electrolytic capacitor as claimed in claim 5 , wherein the polymer containing a repeating unit represented by formula (1) is polymer containing a structure unit represented by the following formula (3) as a repeating unit: wherein R 6 and R 7 each independently represents a hydrogen atom, a linear or branched, saturated or unsaturated alkyl group having from 1 to 6 carbon atoms, or a substituent for forming at least one 5-, 6- or 7-membered saturated hydrocarbon ring structure containing two oxygen atoms when the alkyl groups are combined with each other at an arbitrary position, and the ring structure includes a structure having a vinylene bond which may be substituted, and a phenylene structure which may be substituted.
Claim 8
Dependent Claim
34 words
The method for producing a solid electrolytic capacitor as claimed in claim 5 , wherein the polymer is selected from polyaniline, polyoxyphenylene, polyphenylene sulfide, polythiophene, polyfuran, polypyrrole, polymethylpyrrole, and substitution derivatives and copolymers thereof.
Claim 9
Dependent Claim
19 words
The method for producing a solid electrolytic capacitor as claimed in claim 7 , wherein the polymer is poly(3,4-ethylenedioxythiophene).
Claim 10
Dependent Claim
29 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the organic semiconductor has an electrical conductivity of 10 −1 to 10 3 S/cm.
Claim 11
Dependent Claim
24 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the anode is a sintered body or a foil.
Claim 12
Dependent Claim
30 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the alloy mainly comprising niobium is selected from niobium-tantalum alloy, niobium-zirconium alloy or niobium-silicon alloy.
Claim 13
Dependent Claim
31 words
The method for producing a solid electrolytic capacitor as claimed in claim 10 , wherein the specific surface area of the sintered body is from 0.2 to 7 m 2 /g.
Claim 14
Dependent Claim
41 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein a lead wire formed of a material selected from niobium, partially nitrided niobium, partially oxidized niobium and tantalum is electrically or mechanically connected to the anode.
Claim 15
Dependent Claim
37 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein the exposure of the dielectric layer to a temperature of 200 to 1,000° C. is performed for 10 seconds to 100 hours.
Claim 16
Dependent Claim
26 words
The method for producing a solid electrolytic capacitor as claimed in claim 1 , wherein an electrically conducting layer is formed on an organic semiconductor layer.
Claim 17
Dependent Claim
14 words
A solid electrolytic capacitor produced by the production method claimed in claim 1 .
Claim 18
Dependent Claim
13 words
An electronic circuit comprising the solid electrolytic capacitor claimed in claim 16 .
Claim 19
Dependent Claim
13 words
An electronic device comprising the solid electrolytic capacitor claimed in claim 16 .
References Cited (Backward Citations)
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