US6867122B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Redistribution process
Assignee: Advanced Semiconductor Engineering Inc
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Filing: 2003-01-06
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Granted: 2005-03-15
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Expires: 2023-01-06
Abstract
Abstract A redistribution process is described. A wafer is provided, wherein a first titanium layer, a first copper layer and a second titanium are sequentially formed over the surface of the wafer. The second titanium layer, the first copper layer and the first titanium layer are then defined to form a patterned trace layer. A patterned benzocyclobutene layer is then formed to expose the second titanium layer. The exposed second titanium layer is further removed to expose the first copper layer. Thereafter, a plurality of contacts is formed over the patterned benzocyclobutene layer and to connect with the first copper layer. Further, the wafer comprises a plurality of bonding pads, wherein each bonding pad is connected with each contact through the patterned trace layer.
Inventors
- 👤 Chao-Fu Weng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/652; H10W70/654; H10W70/656; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/019; H10W72/20; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/942
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
166 words
A redistribution process, comprising: providing a wafer having a plurality of bonding pads and a protection layer over a surface of the wafer, wherein the protection layer exposes the bonding pads; forming sequentially a first titanium layer, a first copper layer and a second titanium layer over the surface of the wafer; defining the second titanium layer, the first copper layer and the first titanium layer to form a patterned trace layer which is connected to each of the bonding pads and exposes the protection layer; forming a patterned benzocycloybutene layer over a surface of the patterned trace layer, wherein the patterned benzocyclobutene layer comprises a plurality of first openings that expose the second titanium layer; removing the exposed second titanium layer to expose the first copper layer; and forming a plurality of contacts, which is disposed over the patterned benzocyclobutene layer and connect with the exposed first copper layer, wherein each contact is connected to each of the bonding pads through the patterned trace layer.
Claim 2
Dependent Claim
166 words
A redistribution process, comprising: providing a wafer having a plurality of bonding pads and a protection layer over a surface of the wafer, wherein the protection layer exposes the bonding pads; forming sequentially a first titanium layer, a first copper layer and a second titanium layer over the surface of the wafer; defining the second titanium layer, the first copper layer and the first titanium layer to form a patterned trace layer which is connected to each of the bonding pads and exposes the protection layer; forming a patterned benzocycloybutene layer over a surface of the patterned trace layer, wherein the patterned benzocyclobutene layer comprises a plurality of first openings that expose the second titanium layer; removing the exposed second titanium layer to expose the first copper layer; and forming a plurality of contacts, which is disposed over the patterned benzocyclobutene layer and connect with the exposed first copper layer, wherein each contact is connected to each of the bonding pads through the patterned trace layer.
Claim 3
Dependent Claim
18 words
The process of claim 1 , the protection layer is formed with a material that comprises silicon dioxide.
Claim 4
Dependent Claim
18 words
The process of claim 1 , the protection layer is formed with a material that comprises silicon nitride.
Claim 5
Dependent Claim
15 words
The process of claim 1 , wherein the patterned benzocyclobutene layer is formed by photolithography.
Claim 6
Dependent Claim
77 words
The process of claim 1 , wherein defining the second titnaium layer, the first copper layer and the first titanium layer further comprises: forming a patterned photoresist layer over a surface of the second titanium layer, wherein the patterned photoresist layer comprises a plurality of second openings and the second openings expose the second titanium layer; removing the exposed second titanium layer, the first copper layer and the first titanium layer; and removing the patterned photoresist layer.
Claim 7
Dependent Claim
15 words
The process of claim 5 , wherein the patterned photoresist layer is formed by photolithography.
Claim 8
Dependent Claim
145 words
The process of claim 1 , wherein forming the contacts comprises forming bumps, and the bumps are formed by a method that comprises: forming a second copper layer over a surface of the patterned benzocyclobutene layer; forming a patterned photoresist layer over a surface of the second copper layer, wherein the patterned photoresist layer comprises a plurality of third openings, and the third openings expose the second copper layer; electroplating a copper material on the surface of the exposed second copper layer to form a plurality of copper layer pattern; filling a solder material in the third openings over a surface of the copper layer pattern to form a plurality of solder layer patterns; removing the patterned photoresist layer; removing the uncovered copper layer pattern to expose the second copper; and performing a solder reflow process to form the bumps from the solder layer patterns.
Claim 9
Dependent Claim
14 words
The process of claim 1 , wherein filling the solder material includes performing electroplating.
Claim 10
Dependent Claim
14 words
The process of claim 1 , wherein filling the solder material comprises performing printing.
Claim 11
Dependent Claim
14 words
The process of claim 1 , wherein patterning the photoresist layer includes performing photolithography.
References Cited (Backward Citations)
US6455408B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-03-14 | 2008-09-13 | 2009-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-03-14 | 2012-09-13 | 2013-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-03-14 | 2016-09-13 | 2017-03-15 | $7700.00 | Window Closed / Lapsed |