US6863943B2
Expired / Lapsed
US
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Semiconducting oxide nanostructures
Assignee: Georgia Tech Research Corp
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Filing: 2004-01-13
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Granted: 2005-03-08
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Expires: 2024-01-13
Abstract
Abstract Briefly described, new types of nanostructures and methods of fabrication thereof are disclosed. A representative nanostructure includes a free-standing, helical semiconductor oxide nanostructure. The free-standing, helical semiconductor oxide nanostructure includes a nanobelt having a substantially rectangular cross-section. The the nanobelt is about 5 nanometers to about 200 nanometers in width and about 3 nanometers to about 50 nanometers in height, and the radius of the helical semiconductor oxide nanostructure is about 200 to 5000 nanometers.
Inventors
- 👤 Zhong Lin Wang
- 👤 Xiangyang Kong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:52
CPC Classifications
C; C01; C01B; C01B13/00; C01B13/14; C01B13/145; B; B82; B82Y; B82Y30/00; C01G; C01G11/00; C01G15/00; C01G19/00; C01G19/02; C01G21/00; C01G21/02; H; H02; H02K; H02K31/00; H02K31/02; C01P; C01P2002/00; C01P2002/70; C01P2002/76; C01P2002/77; C01P2004/00; C01P2004/10; C01P2004/20; C01P2004/22; C01P2004/54; C01P2004/60; C01P2004/62; C01P2004/64; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/762; Y10S977/765; Y10T; Y10T428/00; Y10T428/24; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/29; Y10T428/2913; Y10T428/2973
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
56 words
A nanostructure, comprising: a free-standing, helical semiconductor oxide nanostructure including a nanobelt having a substantially rectangular cross-section, wherein the nanobelt is about 5 nanometers to about 200 nanometers in width and about 3 nanometers to about 50 nanometers in height, and wherein the radius of the helical semiconductor oxide nanostructure is about 200 to 5000 nanometers.
Claim 2
Dependent Claim
56 words
A nanostructure, comprising: a free-standing, helical semiconductor oxide nanostructure including a nanobelt having a substantially rectangular cross-section, wherein the nanobelt is about 5 nanometers to about 200 nanometers in width and about 3 nanometers to about 50 nanometers in height, and wherein the radius of the helical semiconductor oxide nanostructure is about 200 to 5000 nanometers.
Claim 3
Dependent Claim
25 words
The nanostructure of claim 1 , wherein the semiconductor oxide is chosen from oxides of zinc, cadmium, mercury, gallium, indium, tellurium, germanium, tin, and lead.
Claim 4
Dependent Claim
13 words
The nanostructure of claim 1 , wherein the semiconductor oxide is zinc oxide.
Claim 5
Dependent Claim
14 words
The nanostructure of claim 1 , wherein the nanobelt is a single crystalline structure.
Claim 6
Dependent Claim
17 words
The nanostructure of claim 1 , wherein the nanobelt is a polar surface dominated zinc oxide nanobelt.
Claim 7
Dependent Claim
13 words
The nanostructure of claim 1 , wherein the nanobelt includes polarized ±(0001) facets.
Claim 8
Dependent Claim
24 words
The nanostructure of claim 1 , wherein the nanobelt has a substantially uniform width along the length of the free-standing helical semiconductor oxide nanostructure.
Claim 9
Dependent Claim
37 words
The nanostructure of claim 1 , wherein the semiconductor oxide is zinc oxide, wherein the nanobelt has a top ±(0001) surface, bottom ±(0001) surface, a right side ±(10{overscore (1)}0) surface, and a left side ±(10{overscore (1)}0) surface.
Claim 10
Dependent Claim
42 words
The nanostructure of claim 1 , wherein the semiconductor oxide is zinc oxide, wherein the nanobelt is described by characteristics selected from an interior (0001)-Zn surface and an exterior (000{overscore (1)})-O surface, and an interior surface (000{overscore (1)})-O and exterior surface (0001)-Zn.
Claim 11
Dependent Claim
37 words
A nanostructure comprising: a free-standing semiconductor oxide nanoring, wherein the nanoring has a radius of about 500 to 10,000 nanometers, a height of about 5 to 2000 nanometers, and a width of about 50 to 7500 nanometers.
Claim 12
Dependent Claim
37 words
A nanostructure comprising: a free-standing semiconductor oxide nanoring, wherein the nanoring has a radius of about 500 to 10,000 nanometers, a height of about 5 to 2000 nanometers, and a width of about 50 to 7500 nanometers.
Claim 13
Dependent Claim
28 words
The nanostructure of claim 10 , wherein the semiconductor is chosen from ZnS, GaN, CdSe, and oxides of zinc, cadmium, gallium, indium, tin, lead, and, and combinations thereof.
Claim 14
Dependent Claim
13 words
The nanostructure of claim 10 , wherein the semiconductor oxide is zinc oxide.
Claim 15
Dependent Claim
40 words
The nanostructure of claim 12 , wherein the nanoring includes a nanobelt having a substantially rectangular cross-section, wherein the nanobelt is about 5 nanometers to about 200 nanometers in width and about 3 nanometers to about 50 nanometers in height.
Claim 16
Dependent Claim
18 words
The nanostructure of claim 13 , wherein the nanoring includes about 1 to 250 loops of the nanobelt.
Claim 17
Dependent Claim
39 words
The nanostructure of claim 13 , wherein the semiconductor oxide is zinc oxide, and wherein the nanobelt includes a top ±(0001) surface, a bottom ±(0001) surface, a right side ±(1{overscore (2)}10) surface, and a left side ±(1{overscore (2)}10) surface.
Claim 18
Dependent Claim
27 words
The nanostructure of claim 13 , wherein the semiconductor oxide is zinc oxide, wherein the nanobelt has an interior (0001)-Zn surface and an exterior ±(000{overscore (1)})-O surface.
Claim 19
Dependent Claim
14 words
The nanostructure of claim 11 , wherein the nanoring is a single crystalline structure.
References Cited (Backward Citations)
US6586095B2
Cited
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