US6842144B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
High gain integrated antenna and devices therefrom
Assignee: University of Florida Research Foundation Inc
•
Filing: 2003-06-10
•
Granted: 2005-01-11
•
Expires: 2023-06-10
Abstract
Abstract An integrated circuit for wireless communications includes substrate, at least one integrated antenna formed in or on the substrate, and a heat sink. At least one dielectric propagating layer is disposed between the integrated antenna and the heat sink which provides a thermal conductivity of at least 35 W/m·K and resistivity greater than 100 Ohm-cm at 25 C. The invention can be used to establish an on-chip or inter-chip wireless link over at least a 2.2 cm distance.
Inventors
- 👤 Xiaoling Guo
- 👤 Kenneth O
- 👤 Ran Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:39
CPC Classifications
H; H01; H01Q; H01Q1/00; H01Q1/02; H01Q1/12; H01Q1/22; H01Q1/2283; H01Q1/36; H01Q1/38; H01Q9/00; H01Q9/04; H01Q9/16; H01Q9/28
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
72 words
An integrated circuit adapted for wireless communications, comprising: a monolithic substrate including at least one integrated electronic device; at least one integrated antenna formed in or on said substrate; a heat sink, and at least one dielectric propagating layer disposed between said integrated antenna and said heat sink, said propagating layer providing a bulk thermal conductivity of at least 35 W/m·K and a resistivity of at least 100 Ohm-cm at 25 C.
Claim 2
Dependent Claim
72 words
An integrated circuit adapted for wireless communications, comprising: a monolithic substrate including at least one integrated electronic device; at least one integrated antenna formed in or on said substrate; a heat sink, and at least one dielectric propagating layer disposed between said integrated antenna and said heat sink, said propagating layer providing a bulk thermal conductivity of at least 35 W/m·K and a resistivity of at least 100 Ohm-cm at 25 C.
Claim 3
Dependent Claim
23 words
The integrated circuit of claim 1 , wherein said dielectric propagating layer is an insert layer comprising a material distinct from said substrate.
Claim 4
Dependent Claim
28 words
The integrated circuit of claim 2 , wherein said insert layer comprises at least one material selected from the group consisting of aluminum nitride (AlN), sapphire and diamond.
Claim 5
Dependent Claim
20 words
The integrated circuit of claim 2 , wherein a thickness of said insert layer is between 0.01 to 1 mm.
Claim 6
Dependent Claim
21 words
The integrated circuit of claim 1 , wherein said circuit provides wireless communications over a distance of at least 1.0 cm.
Claim 7
Dependent Claim
21 words
The integrated circuit of claim 1 , wherein said circuit provides wireless communications over a distance of at least 2.0 cm.
Claim 8
Dependent Claim
16 words
The integrated circuit of claim 1 , wherein said monolithic substrate provides said dielectric propagating layer.
Claim 9
Dependent Claim
13 words
The integrated circuit of claim 7 , wherein said monolithic substrate comprises silicon.
Claim 10
Dependent Claim
19 words
The integrated circuit of claim 8 , wherein said silicon substrate provides a resistivity of at least 100 Ohm-cm.
Claim 11
Dependent Claim
19 words
The integrated circuit of claim 2 , wherein said insert layer is in intimate contact with said monolithic substrate.
Claim 12
Dependent Claim
48 words
The integrated circuit of claim 1 , wherein said at least one integrated electronic device comprises at least a first and second integrated electronic device, said first and second integrated electronic devices each including said integrated antennas, said electronic devices communicating on-chip between one another over the air.
Claim 13
Dependent Claim
22 words
The integrated circuit of claim 11 , wherein said dielectric propagating layer is an insert layer comprising material distinct from said substrate.
Claim 14
Dependent Claim
27 words
The integrated circuit of claim 12 , wherein said insert layer comprising at least one selected from the group consisting of aluminum nitride (AIN), sapphire and diamond.
Claim 15
Dependent Claim
20 words
The integrated circuit of claim 13 , wherein a thickness of said insert layer is between 0.01 to 1 mm.
Claim 16
Dependent Claim
22 words
The integrated circuit of claim 11 , wherein said circuit provides on-chip wireless communications over a distance of at least 1.0 cm.
Claim 17
Dependent Claim
22 words
The integrated circuit of claim 11 , wherein said circuit provides on-chip wireless communications over a distance of at least 2.0 cm.
Claim 18
Dependent Claim
22 words
The integrated circuit of claim 11 , wherein at least one of said first and second integrated electronic devices comprises a microprocessor.
References Cited (Backward Citations)
US6150974A
Cited
US5202752A
Cited
US5449953A
Cited
US5248947A
Cited
US5455594A
Cited
US5767808A
Cited
US6384785B1
Cited
US6271792B1
Cited
US6127989A
Cited
US6518932B1
Cited
US20030034921A1
Cited
US20020126048A1
Cited
US6388623B1
Cited
US6535090B1
Cited
US6486751B1
Cited
US20030048095A1
Cited
US20020140608A1
Cited
US20020149526A1
Cited
US20030020092A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-01-11 | 2008-07-12 | 2009-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-01-11 | 2012-07-12 | 2013-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-01-11 | 2016-07-12 | 2017-01-11 | $7700.00 | Window Closed / Lapsed |