US6838308B2
Expired / Lapsed
US
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Semiconductor polysilicon component and method of manufacture thereof
Assignee: Tohoku Techno Arch Co Ltd
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Filing: 2001-05-14
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Granted: 2005-01-04
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Expires: 2021-05-14
Abstract
Abstract On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.
Inventors
- 👤 Koichi Haga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; C; C03; C03C; C03C17/00; C03C17/34; C03C17/3411; C03C17/3417; C03C17/36; C03C17/3602; C03C17/3605; C03C17/3615; C03C17/3649; C03C17/3668; C03C17/3671; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/025; C23C14/06; C23C14/08; C23C14/086; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/407; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
88 words
A method of fabricating a polycrystalline transparent semiconductor member, characterized in that the method comprises: forming a conductive film on a transparent substrate, and with a DC-bias applying to the formed conductive film, forming, according to a sputtering method, a polycrystalline zinc oxide thin film having a-axis orientation; and forming, by means of a MO-CVD method, a second polycrystalline zinc oxide thin film having a-axis orientation on the polycrystalline zinc oxide thin film; wherein in the MO-CVD method, hydrative zinc acetyl acetonate is used as a raw material.
Claim 2
Independent Claim
88 words
A method of fabricating a polycrystalline transparent semiconductor member, characterized in that the method comprises: forming a conductive film on a transparent substrate, and with a DC-bias applying to the formed conductive film, forming, according to a sputtering method, a polycrystalline zinc oxide thin film having a-axis orientation; and forming, by means of a MO-CVD method, a second polycrystalline zinc oxide thin film having a-axis orientation on the polycrystalline zinc oxide thin film; wherein in the MO-CVD method, hydrative zinc acetyl acetonate is used as a raw material.
Claim 3
Dependent Claim
36 words
A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1 , characterized in that the hydrative zinc acetyl acetonate is preliminarily heated to decompose followed by reacting with an oxygen gas.
Claim 4
Dependent Claim
33 words
A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1 , characterized in that the zinc acetyl acetonate contains an impurity of a I group or III group.
Claim 5
Dependent Claim
52 words
A method of fabricating a polycrystalline transparent semiconductor member as set forth in claim 1 , characterized in that the conductive film is a metal, and by forming the second polycrystalline zinc oxide thin film by means of the MO-CVD method, a conductive film of the metal is oxidized to improve transparency.
Claim 6
Dependent Claim
56 words
A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 1 , provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.
Claim 7
Dependent Claim
80 words
A transparent semiconductor element, characterized in that the semiconductor element is fabricated by laminating a transparent substrate, a metal oxide film, a first zinc oxide thin film having a-axis orientation, and a second zinc oxide thin film having a-axis orientation, and by disposing, on the second zinc oxide thin film having a-axis orientation, a transparent source electrode and drain electrode, and a transparent gate insulating film and gate electrode, and has transmittance of 50% or more in the visible region.
Claim 8
Dependent Claim
80 words
A transparent semiconductor element, characterized in that the semiconductor element is fabricated by laminating a transparent substrate, a metal oxide film, a first zinc oxide thin film having a-axis orientation, and a second zinc oxide thin film having a-axis orientation, and by disposing, on the second zinc oxide thin film having a-axis orientation, a transparent source electrode and drain electrode, and a transparent gate insulating film and gate electrode, and has transmittance of 50% or more in the visible region.
Claim 9
Dependent Claim
27 words
A transparent semiconductor element as set forth in claim 6 , characterized in that the metal oxide film is a film of oxide of tungsten or titanium.
Claim 10
Dependent Claim
56 words
A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 2 , provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.
Claim 11
Dependent Claim
56 words
A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 3 , provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.
Claim 12
Dependent Claim
56 words
A transparent semiconductor, characterized in that the transistor is fabricated according to the method of fabricating a polycrystalline transparent semiconductor member set forth in claim 4 , provided with a transparent electrode disposed on the second zinc oxide thin film to form an active element, and has transmittance of 50% or more in the visible region.
References Cited (Backward Citations)
JP2000137342A
Cited
US6727522B1
Cited
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