US6756688B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wiring board and its production method, semiconductor device and its production method, and electronic apparatus
Assignee: Renesas Electronics Corp
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Filing: 2002-11-21
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Granted: 2004-06-29
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Expires: 2022-11-21
Abstract
Abstract There are provided a high density and low manufacturing cost wiring board with high reliability in connection, a semiconductor device and a producing method therefor. The invention relates to a wiring board comprising a board having an electrode and being coated with an insulation layer with a hole for exposing the electrode; a wiring consisting of a Cr or Ti layer, which is connected to the electrode and closely contacts with the insulation layer, and of a Cu layer which is closely contacts with the Cr or Ti layer; a protective film which covers the wiring and is provided with another hole for soldering; and a solder for the outer connection which is mounted in the both holes and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
Inventors
- 👤 Yasumori Narizuka
- 👤 Mitsuko Itou
- 👤 Yoshihide Yamaguchi
- 👤 Hiroyuki Tenmei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:17
CPC Classifications
H; H10; H10W; H10W72/00; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/346; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W70/00; H10W70/099; H10W70/60; H10W70/62; H10W70/66; H10W90/00; H10W90/701; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/09372; H05K2201/0949; H05K3/38; H05K3/388; H05K3/46; H05K3/4644; H10W20/20; H10W70/01; H10W70/05; H10W72/01; H10W72/012; H10W72/01221; H10W72/01225; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/241; H10W72/244; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/922; H10W72/923; H10W72/951; H10W72/952; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
71 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a mounting surface on which the semiconductor device is mounted, and wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 2
Dependent Claim
71 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a mounting surface on which the semiconductor device is mounted, and wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 3
Dependent Claim
41 words
A semiconductor device according to claim 1 , wherein the insulation layer has an opening at a position where the electrode is formed, and wherein a part of the wiring is formed also on a slant part of the insulation layer.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 1 , wherein the insulation layer is formed by printing.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 1 , wherein the insulation layer is formed by photolithography.
Claim 6
Dependent Claim
15 words
A semiconductor device according to claim 1 , wherein the insulation layer comprises a polymer.
Claim 7
Dependent Claim
14 words
A semiconductor device according to claim 1 , wherein the insulation layer comprises polyimide.
Claim 8
Dependent Claim
21 words
A semiconductor device according to claim 1 , wherein-there is provided another insulation layer on the insulation layer and the wiring.
Claim 9
Dependent Claim
63 words
A semiconductor device according to claim 1 , wherein the wiring comprises at least three layers which are a first layer, a second layer, and a third layer, the first layer comprising any one of Cr and Ti, the second layer being formed on the first layer and comprising Cu, and the third layer being formed on the second layer and comprising Cr.
Claim 10
Dependent Claim
61 words
A semiconductor device according to claim 1 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, and wherein the second layer and the external connection terminal are alloyed and connected with each other.
Claim 11
Dependent Claim
77 words
A semiconductor device according to claim 1 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, and wherein the external connection terminal is alloyed with the Cu layer of the second layer such that the a resulting alloyed solder reaches the Cr or Ti layer of the first layer.
Claim 12
Dependent Claim
71 words
A semiconductor device according to claim 1 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, wherein the second layer is alloyed with the external connection terminal, and wherein the first layer is of a barrier for preventing diffusion of the alloyed solder.
Claim 13
Dependent Claim
59 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress exerted on the terminal, and wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 14
Dependent Claim
59 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress exerted on the terminal, and wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 15
Dependent Claim
69 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a board on which the semiconductor device is mounted, wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 16
Dependent Claim
69 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a board on which the semiconductor device is mounted, wherein the external connection terminal comprises an Sn-Ag-Cu alloy solder.
Claim 17
Dependent Claim
77 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a substrate on which the semiconductor device is mounted, wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
Claim 18
Dependent Claim
77 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a substrate on which the semiconductor device is mounted, wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
Claim 19
Dependent Claim
41 words
A semiconductor device according to claim 14 , wherein the insulation layer has an opening at a position where the electrode is formed, and wherein a part of the wiring is formed also on a slant part of the insulation layer.
Claim 20
Dependent Claim
16 words
A semiconductor device according to claim 14 , wherein the insulation layer is formed by printing.
Claim 21
Dependent Claim
16 words
A semiconductor device according to claim 14 , wherein the insulation layer is formed by photolithography.
Claim 22
Dependent Claim
15 words
A semiconductor device according to claim 14 , wherein the insulation layer comprises a polymer.
Claim 23
Dependent Claim
14 words
A semiconductor device according to claim 14 , wherein the insulation layer comprises polyimide.
Claim 24
Dependent Claim
22 words
A semiconductor device according to claim 14 , wherein there is provided another insulation layer on the insulation layer and the wiring.
Claim 25
Dependent Claim
62 words
A semiconductor device according to claim 14 , wherein the wiring comprises at least three layers which are a first layer, a second layer, and a third layer, the first layer comprising any one of Cr and Ti, the second layer being formed on the first layer and comprising Cu, the third layer being formed on the second layer and comprising Cr.
Claim 26
Dependent Claim
61 words
A semiconductor device according to claim 14 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, and wherein the second layer and the external connection terminal are alloyed and connected with each other.
Claim 27
Dependent Claim
76 words
A semiconductor device according to claim 14 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, and wherein the external connection terminal is alloyed with the Cu layer of the second layer such that a resulting alloyed solder reaches the Cr or Ti layer of the first layer.
Claim 28
Dependent Claim
71 words
A semiconductor device according to claim 14 , wherein the wiring comprises at least a first layer consisting of a Cr or Ti layer and at least a second layer which consists of a Cu layer and which is formed on the first layer, wherein the second layer is alloyed with the external connection terminal, and wherein the first layer is of a barrier for preventing diffusion of the alloyed solder.
Claim 29
Dependent Claim
67 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress exerted on the terminal, and wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
Claim 30
Dependent Claim
67 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress exerted on the terminal, and wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
Claim 31
Dependent Claim
78 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a board on which the semiconductor device is mounted, and wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
Claim 32
Dependent Claim
78 words
A semiconductor device comprising a semiconductor chip; an electrode formed on the semiconductor chip; a wiring connected to the electrode; an insulation layer formed on the semiconductor chip; and an external connection terminal electrically connected to the wiring, wherein the insulation layer relieves stress arisen between the semiconductor device and a board on which the semiconductor device is mounted, and wherein the external connection terminal includes an alloy comprising, by weight, 3.0% Ag and the balance of Sn.
References Cited (Backward Citations)
JPS5730356A
Cited
JPH0327269U
Cited
JPH0653648A
Cited
JPH07297321A
Cited
JPH0845990A
Cited
JPH1065057A
Cited
JPH10284846A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-06-29 | 2007-12-29 | 2008-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-29 | 2011-12-29 | 2012-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-29 | 2015-12-29 | 2016-06-29 | $7700.00 | Window Closed / Lapsed |