US6717502B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated balun and transformer structures
Assignee: Qualcomm Inc
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Filing: 2001-11-05
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Granted: 2004-04-06
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Expires: 2021-11-05
Abstract
Abstract An on-chip signal transforming device includes a substrate and a first conductive layer above the substrate, wherein the first conductive layer has a plurality of interleaved inductors. The device further includes a second conductive layer above the substrate, wherein the second conductive layer has at least one inductor.
Inventors
- 👤 Chik Patrick Yue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:15
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/45; H03F3/45071; H03F3/45076; H03F3/45179; H03F3/45183; H03H; H03H7/00; H03H7/42; H03F2200/00; H03F2200/541; H03F2203/00; H03F2203/45; H03F2203/45662; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/4902; Y10T29/49117; Y10T29/49124; Y10T29/49155
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
100 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; and a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has formed thereon at least one inductor DC isolated from the first plurality of interleaved inductors, the at least one inductor formed completely within one or more layers other than the first conductive layer.
Claim 2
Dependent Claim
100 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; and a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has formed thereon at least one inductor DC isolated from the first plurality of interleaved inductors, the at least one inductor formed completely within one or more layers other than the first conductive layer.
Claim 3
Dependent Claim
17 words
The device of claim 1 , wherein the second conductive layer is below the first conductive layer.
Claim 4
Dependent Claim
19 words
The device of claim 1 , wherein the at least one inductor is a second plurality of interleaved inductors.
Claim 5
Dependent Claim
16 words
The device of claim 1 , wherein the at least one inductor is a spiral inductor.
Claim 6
Dependent Claim
49 words
The device of claim 2 , further comprising; a third conductive layer above the substrate insulated from the first and second conductive layers, wherein: the at least one inductor is also partly formed in the third conductive layer, and the third conductive layer is above the first conductive layer.
Claim 7
Dependent Claim
97 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; and a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has formed thereon a second plurality of interleaved inductors DC isolated from the first plurality of interleaved inductors, the second plurality of interleaved inductors formed completely within the second conductive layer.
Claim 8
Dependent Claim
97 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; and a second conductive layer above the substrate insulated from the first conductive layer, wherein the second conductive layer has formed thereon a second plurality of interleaved inductors DC isolated from the first plurality of interleaved inductors, the second plurality of interleaved inductors formed completely within the second conductive layer.
Claim 9
Dependent Claim
134 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; a second conductive layer above the substrate, and below and insulated from the first conductive layer, wherein the second conductive layer has formed thereon at least one inductor DC isolated from the first plurality of interleaved inductors, the at least one inductor formed completely within one or more layers other than the first conductive layer; a third conductive layer above the first conductive layer and insulated from the first and second conductive layers, wherein the at least one inductor is also partly formed in the third conductive.
Claim 10
Dependent Claim
134 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has formed thereon a first plurality of inductors disposed in interleaved manner, the first plurality of interleaved inductors formed completely within the first conductive layer; a second conductive layer above the substrate, and below and insulated from the first conductive layer, wherein the second conductive layer has formed thereon at least one inductor DC isolated from the first plurality of interleaved inductors, the at least one inductor formed completely within one or more layers other than the first conductive layer; a third conductive layer above the first conductive layer and insulated from the first and second conductive layers, wherein the at least one inductor is also partly formed in the third conductive.
Claim 11
Dependent Claim
108 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has a first spiral inductor and a second spiral inductor that are disposed in interleaved manner, the first spiral inductor formed substantially within the first conductive layer and the second spiral inductor formed completely within the first conductive layer; a second conductive layer above the substrate insulated from the first conductive layer; and a conductive path from the first conductive layer to the second conductive layer and back to the first conductive layer to allow the first spiral inductor to cross over the second spiral inductor.
Claim 12
Dependent Claim
108 words
An on-chip signal transforming device, the device comprising: a substrate; a first conductive layer above the substrate, wherein the first conductive layer has a first spiral inductor and a second spiral inductor that are disposed in interleaved manner, the first spiral inductor formed substantially within the first conductive layer and the second spiral inductor formed completely within the first conductive layer; a second conductive layer above the substrate insulated from the first conductive layer; and a conductive path from the first conductive layer to the second conductive layer and back to the first conductive layer to allow the first spiral inductor to cross over the second spiral inductor.
Claim 13
Dependent Claim
56 words
The device according to claim 8 , further comprising: a third conductive layer above the substrate and insulated from the first and second conductive layers, wherein the third conductive layer has a third spiral inductor that inductively couples to the first and second spiral inductors, the third spiral inductor formed completely within the third conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-04-06 | 2007-10-06 | 2008-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-04-06 | 2011-10-06 | 2012-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-04-06 | 2015-10-06 | 2016-04-06 | $7700.00 | Window Closed / Lapsed |