US6686223B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating multi-chip package semiconductor device
Assignee: Lapis Semiconductor Co Ltd
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Filing: 2003-04-14
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Granted: 2004-02-03
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Expires: 2023-04-14
Abstract
Abstract A semiconductor device includes a substrate ( 101 ); a first semiconductor chip ( 102 ) mounted on the substrate; and a first insulating layer ( 105 ) which is provided on the first semiconductor chip. The device further includes a metal layer ( 102 ) which is provided on the first insulating layer; a second insulating layer ( 117 ) which is provided on the metal layer; and a second semiconductor chip ( 104 ) which is provided on the second insulating layer.
Inventors
- 👤 Yasufumi Uchida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:27
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/20; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/611; H10W90/00; H10W90/401; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/01; H10W72/30; H10W72/381; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/877; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W72/941; H10W72/9415; H10W74/00; H10W90/20; H10W90/22; H10W90/231; H10W90/291; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/732; H10W90/734; H10W90/736; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
A method for fabricating a multi-chip package semiconductor device having a substrate, a first semiconductor chip mounted on the substrate, a first insulating layer which is provided on the first semiconductor chip, a metal layer which is provided on the first insulating layer, a second insulating layer which is provided on the metal layer, and second semiconductor chip which is provided on the second insulating layer, the method comprising the steps of: providing a semiconductor wafer in which a plurality of the second semiconductor chips are formed; providing a metal plate; providing insulating layers on the both surfaces of the metal plate; adhering the semiconductor wafer onto one surface of the metal plate with the insulating layer; and cutting the semiconductor wafer with the metal plate to obtain individual second semiconductor chips with the metal layers.
Claim 2
Independent Claim
136 words
A method for fabricating a multi-chip package semiconductor device having a substrate, a first semiconductor chip mounted on the substrate, a first insulating layer which is provided on the first semiconductor chip, a metal layer which is provided on the first insulating layer, a second insulating layer which is provided on the metal layer, and second semiconductor chip which is provided on the second insulating layer, the method comprising the steps of: providing a semiconductor wafer in which a plurality of the second semiconductor chips are formed; providing a metal plate; providing insulating layers on the both surfaces of the metal plate; adhering the semiconductor wafer onto one surface of the metal plate with the insulating layer; and cutting the semiconductor wafer with the metal plate to obtain individual second semiconductor chips with the metal layers.
References Cited (Backward Citations)
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