Magnetic memory device in which influence of adjacent memory cell is controllable

Claim 2

A magnetic memory device comprising: a plurality of word lines extending into a first direction; a plurality of bit lines extending into a second direction to intersect said plurality of word lines; and a plurality of magnetic memory cells which are provided at intersections of said plurality of word lines and said plurality of bit lines, and each of which comprises a ferromagnetic film having a changeable magnetic field, wherein data is written to the ferromagnetic film in a first one of said plurality of magnetic memory cells with a synthetic magnetic field generated by first current flowing on a specific one of said plurality of word lines associated with said first magnetic memory cell and second current flowing on a specific one of said plurality of bit lines associated with said first magnetic memory cell, a distance d between said first magnetic memory cell and one of said specific word line or said specific bit line meets the following equation (1), d≦p ×(γ/(1−γ)) ½ (0<γ≦0.3)  (1) where p is a distance between said first magnetic memory cell and a second magnetic memory cell adjacent to said first magnetic memory cell in a specific one of said first direction and said second direction, and γ is a constant, wherein said distance d is defined based on a center position of said ferromagnetic film of said first magnetic memory cell and a center of a current distribution in the one of said specific word line and said specific bit line.

Claim 3

The magnetic memory device according to claim 1 , wherein an easy axis of said first magnetic memory cell is in said first direction.

Claim 4

The magnetic memory device according to claim 1 , wherein said distance p between said first magnetic memory cell and said second magnetic memory cell is equal to or less than 1 μm.

Claim 5

The magnetic memory device according to claim 1 , wherein said distance p between said first magnetic memory cell and said second magnetic memory cell is equal to or less than 1 μm.

Claim 6

The magnetic memory device according to claim 1 , wherein the constant γ is a ratio of a strength of the synthetic magnetic field at the ferromagnetic film of said first memory cell, and a strength of the synthetic magnetic field at the ferromagnetic film of said second magnetic memory cell, in said specific direction.

Claim 7

The magnetic memory device according to claim 3 , wherein said distance p is defined based on a center position of said first magnetic memory cell and a center position of said second magnetic memory cell.

Claim 8

The magnetic memory device according to claim 4 , wherein said distance p is defined based on a center position of said first magnetic memory cell and a center position of said second magnetic memory cell.

Claim 9

A magnetic memory device comprising: a plurality of write word lines extending into a first direction; a plurality of read word lines extending into said first direction in parallel to said plurality of write word lines; a plurality of bit lines extending into a second direction to intersect said plurality of write word lines; and a plurality of magnetic memory cells which are provided at intersections of said plurality of word lines and said plurality of bit lines, and each of which comprises a ferromagnetic film having a changeable magnetic field and a conductive drawing line connected with a corresponding one of said plurality of read word lines, wherein data are written in the respective ferromagnetic film of accessed magnetic memory cells as first ones of said plurality of magnetic memory cells with synthetic magnetic fields, each of which is generated by first current flowing on one of said plurality of write word lines associated with a corresponding one of said accessed magnetic memory cells and second current flowing on one of said plurality of bit lines associated with said corresponding accessed magnetic memory cell, a distance d between an end-side one of said accessed magnetic memory cells and one of said associated write word line or said associated bit line meets the following equation (1), d≦p ×(γ/(1−γ)) ½ (0<γ≦0.3)  (1) where p is a distance between said end-side accessed magnetic memory cell and a non-accessed one of said plurality of magnetic memory cells adjacent to said end-side accessed magnetic memory cell in a specific one of said first direction and said second direction, and γ is a constant, wherein said distance d is defined based on a center position of said ferromagnetic film of said end-side accessed magnetic memory cell and a center of a current distribution in the one of said write word line associated with said end-side magnetic memory cell and said bit line associated with said end-side magnetic memory cell.

Claim 10

A magnetic memory device comprising: a plurality of write word lines extending into a first direction; a plurality of read word lines extending into said first direction in parallel to said plurality of write word lines; a plurality of bit lines extending into a second direction to intersect said plurality of write word lines; and a plurality of magnetic memory cells which are provided at intersections of said plurality of word lines and said plurality of bit lines, and each of which comprises a ferromagnetic film having a changeable magnetic field and a conductive drawing line connected with a corresponding one of said plurality of read word lines, wherein data are written in the respective ferromagnetic film of accessed magnetic memory cells as first ones of said plurality of magnetic memory cells with synthetic magnetic fields, each of which is generated by first current flowing on one of said plurality of write word lines associated with a corresponding one of said accessed magnetic memory cells and second current flowing on one of said plurality of bit lines associated with said corresponding accessed magnetic memory cell, a distance d between an end-side one of said accessed magnetic memory cells and one of said associated write word line or said associated bit line meets the following equation (1), d≦p ×(γ/(1−γ)) ½ (0<γ≦0.3)  (1) where p is a distance between said end-side accessed magnetic memory cell and a non-accessed one of said plurality of magnetic memory cells adjacent to said end-side accessed magnetic memory cell in a specific one of said first direction and said second direction, and γ is a constant, wherein said distance d is defined based on a center position of said ferromagnetic film of said end-side accessed magnetic memory cell and a center of a current distribution in the one of said write word line associated with said end-side magnetic memory cell and said bit line associated with said end-side magnetic memory cell.

Claim 11

The magnetic memory device according to claim 8 , wherein an easy axis of said accessed magnetic memory cell is in said first direction.

Claim 12

The magnetic memory device according to claim 8 , wherein said distance p between said end-side accessed magnetic memory cell and said non-accessed magnetic memory cell is equal to or less than 1 μm.

Claim 13

The magnetic memory device according to claim 8 , wherein said distance p between said end-side accessed magnetic memory cell and said non-accessed magnetic memory cell is equal to or less than 1 μm.

Claim 14

The magnetic memory device according to claim 8 , wherein a first wiring line pitch between said bit lines corresponding to said accessed magnetic memory cells is different from a second wiring line pitch between said end-side accessed magnetic memory cell and said non-accessed magnetic memory cell.

Claim 15

The magnetic memory device according to claim 10 , wherein said first wiring line pitch is smaller than said second wiring line pitch.

Claim 16

The magnetic memory device according to claim 8 , wherein the constant γ is a ratio of a strength of the synthetic magnetic field at the ferromagnetic film of said end-side accessed magnetic memory cell, and a strength of the synthetic magnetic field at the ferromagnetic film of said non-accessed magnetic memory cell, in said specific direction.

Claim 17

The magnetic memory device according to claim 10 , wherein said distance p is defined based on a center position of said first magnetic memory cell and a center position of said second magnetic memory cell.

Claim 18

The magnetic memory device according to claim 11 , wherein said distance p is defined based on a center position of said first magnetic memory cell and a center position of said second magnetic memory cell.

Claim 19

A magnetic memory device comprising: a plurality of word lines extending into a first direction; a plurality of bit lines extending into a second direction to intersect said plurality of word lines; and a plurality of magnetic memory cells which are provided at intersections of said plurality of word lines and said plurality of bit lines, and each of which comprises a ferromagnetic film having a changeable magnetic field, wherein data is written to the ferromagnetic film in a first one of said plurality of magnetic memory cells with a synthetic magnetic field generated by first current flowing on a specific one of said plurality of word lines associated with said first magnetic memory cell and second current flowing on a specific one of said plurality of bit lines associated with said first magnetic memory cell, a distance dA between said first magnetic memory cell and said specific word line meets the following equation, dA≦pA ×(γ A /(1 −γA )) ½ (0 <γA <1.0) where pA is a distance between said first magnetic memory cell and a second magnetic memory cell adjacent to said first magnetic memory cell in said second direction, and γA is a ratio of a strength of said synthetic magnetic field in said second direction at the ferromagnetic film of said first magnetic memory cell, and a strength of said synthetic magnetic field in said second direction at the ferromagnetic film of said second magnetic memory cell, wherein said distance dA is defined based on a center position of said ferromagnetic film of said first magnetic memory cell and a center of a current distribution in said specific word line, and a distance dB between said first magnetic memory cell and said specific bit line meets the following equation, dB≦pB ×(γ B /(1 −γB )) ½ (0 <γB <1.0) where pB is a distance between said first magnetic memory cell and a third magnetic memory cell adjacent to said first magnetic memory cell in said first direction, and γB is a ratio of a strength of said synthetic magnetic field in said first direction at the ferromagnetic film of said first magnetic memory cell, and a strength of said synthetic magnetic field in said first direction at the ferromagnetic film of said third magnetic memory cell, wherein said distance dB is defined based on a center position of said ferromagnetic film of said first magnetic memory cell and a center of a current distribution in said specific bit line.

Claim 20

A magnetic memory device comprising: a plurality of word lines extending into a first direction; a plurality of bit lines extending into a second direction to intersect said plurality of word lines; and a plurality of magnetic memory cells which are provided at intersections of said plurality of word lines and said plurality of bit lines, and each of which comprises a ferromagnetic film having a changeable magnetic field, wherein data is written to the ferromagnetic film in a first one of said plurality of magnetic memory cells with a synthetic magnetic field generated by first current flowing on a specific one of said plurality of word lines associated with said first magnetic memory cell and second current flowing on a specific one of said plurality of bit lines associated with said first magnetic memory cell, a distance dA between said first magnetic memory cell and said specific word line meets the following equation, dA≦pA ×(γ A /(1 −γA )) ½ (0 <γA <1.0) where pA is a distance between said first magnetic memory cell and a second magnetic memory cell adjacent to said first magnetic memory cell in said second direction, and γA is a ratio of a strength of said synthetic magnetic field in said second direction at the ferromagnetic film of said first magnetic memory cell, and a strength of said synthetic magnetic field in said second direction at the ferromagnetic film of said second magnetic memory cell, wherein said distance dA is defined based on a center position of said ferromagnetic film of said first magnetic memory cell and a center of a current distribution in said specific word line, and a distance dB between said first magnetic memory cell and said specific bit line meets the following equation, dB≦pB ×(γ B /(1 −γB )) ½ (0 <γB <1.0) where pB is a distance between said first magnetic memory cell and a third magnetic memory cell adjacent to said first magnetic memory cell in said first direction, and γB is a ratio of a strength of said synthetic magnetic field in said first direction at the ferromagnetic film of said first magnetic memory cell, and a strength of said synthetic magnetic field in said first direction at the ferromagnetic film of said third magnetic memory cell, wherein said distance dB is defined based on a center position of said ferromagnetic film of said first magnetic memory cell and a center of a current distribution in said specific bit line.

Claim 21

The magnetic memory device according to claim 17 , wherein an easy axis of said first magnetic memory cell is in said first direction.

Claim 22

The magnetic memory device according to claim 17 , wherein said distance pA between said first magnetic memory cell and said second magnetic memory cell is equal to or less than 1 μm, and said distance pB between said first magnetic memory cell and said third magnetic memory cell is equal to or less than 1 μm.

Claim 23

The magnetic memory device according to claim 19 , wherein γA≦0.3 and γB≦0.3.

Claim 24

The magnetic memory device according to claim 17 , wherein said distance pA is defined based on a center position of said first magnetic memory cell and a center position of said second magnetic memory cell, and said distance pB is defined based on a center position of said first magnetic memory cell and a center position of said third magnetic memory cell.