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US6680866B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Clock synchronous semiconductor memory device

Assignee: Rambus Inc
•
Filing: 2002-06-18
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Granted: 2004-01-20
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Expires: 2022-06-18
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Abstract

Abstract The position information indicating the position of a memory relative to a controller is stored in a position information generating circuit, and the transfer timing of write data transmitted from an input circuit to a write circuit and the activation timing of a latch transfer instructing signal are adjusted according to this position information. Thus, the semiconductor memory device is provided that is capable of taking in and generating the internal write data reliably even when the flight time of a data bus becomes substantially the same as the cycle time of a clock signal.

Inventors

  • 👤 Takeshi Kajimoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 12:43
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C7/00; G11C7/10; G11C7/1078; G11C7/1093; G11C7/1072; G11C7/1087; G11C7/22

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 100 words
A semiconductor memory device operating according to a control signal from a controller, comprising: position information generating circuitry for generating position information indicating a position on the basis of said controller; data take-in instructing signal generating circuitry for adjusting a timing for taking in data received from said controller to generate a data take-in instructing signal in accordance with the position information generated from said position information generating circuitry and a write instructing signal supplied from said controller; and write circuitry for generating internal data corresponding to the data received from said controller according to said data take-in instructing signal.
Claim 2
Dependent Claim 100 words
A semiconductor memory device operating according to a control signal from a controller, comprising: position information generating circuitry for generating position information indicating a position on the basis of said controller; data take-in instructing signal generating circuitry for adjusting a timing for taking in data received from said controller to generate a data take-in instructing signal in accordance with the position information generated from said position information generating circuitry and a write instructing signal supplied from said controller; and write circuitry for generating internal data corresponding to the data received from said controller according to said data take-in instructing signal.
Claim 3
Dependent Claim 31 words
The semiconductor memory device according to claim 1 , wherein said position information generating circuitry includes a register circuit for taking in and storing the position information supplied from said controller.
Claim 4
Dependent Claim 32 words
The semiconductor memory device according to claim 1 , wherein said position information generating circuitry generates said position information according to data externally applied in a fixed manner to a predetermined terminal.
Claim 5
Dependent Claim 56 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry comprises a circuit for generating said position information in accordance with a phase relation between a prescribed signal applied from said controller and said clock signal.
Claim 6
Dependent Claim 55 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry generates said position information according to a logic level of a prescribed signal applied from said controller at a transition point of said clock signal.
Claim 7
Dependent Claim 69 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry takes in a prescribed signal applied in synchronization with said clock signal from said controller in response to a position information setting instruction applied from said controller and generates said position information according to the prescribed signal taken in.
Claim 8
Dependent Claim 68 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry takes in a prescribed signal applied in synchronization with said clock signal from said controller in response to a data access instruction applied from said controller and generates said position information according to the prescribed signal taken in.
Claim 9
Dependent Claim 50 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry generates a delay amount setting signal for setting an amount of delay of said clock signal as said position information.
Claim 10
Dependent Claim 33 words
The semiconductor memory device according to claim 8 , wherein said position information generating circuitry includes a circuit for storing delay amount setting data setting said amount of delay applied from said controller.
Claim 11
Dependent Claim 31 words
The semiconductor memory device according to claim 8 , wherein said position information generating circuitry generates said delay amount setting signal according to a fixed voltage supplied to a prescribed terminal.
Claim 12
Dependent Claim 59 words
The semiconductor memory device according to claim 1 , wherein said semiconductor memory device is configured to operate in synchronization with a clock signal, and said position information generating circuitry generates, as said position information, an edge selecting signal for designating which of a rising edge of and a falling edge of said clock signal is to be selected.
Claim 13
Dependent Claim 33 words
The semiconductor memory device according to claim 11 , wherein said position information generating circuitry includes a circuit for storing edge designating data applied from said controller to generate said edge selecting signal.
Claim 14
Dependent Claim 27 words
The semiconductor memory device according to claim 11 , wherein said position information generating circuitry generates said edge selecting signal to a voltage of a prescribed terminal.

References Cited (Backward Citations)

JPH10283059A Cited
US6150866A Cited
JPH10283060A Cited
US6226757B1 Cited
US6393541B1 Cited
US20030002356A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2007-01-19 2007-07-21 2008-01-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2011-01-19 2011-07-21 2012-01-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2015-01-19 2015-07-21 2016-01-20 $7700.00 Window Closed / Lapsed

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