US6555458B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabricating an electrical metal fuse
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2002-01-14
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Granted: 2003-04-29
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Expires: 2022-01-14
Abstract
Abstract A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device. At least two varying trench metal depths may be formed on a substrate to configure the electrical metal fuse thereon. Additionally, at least two different widths of single metal lines, may be configured on the substrate. As a result of the two different trench depths and two different widths of metal formed thereon to create the electrical metal fuse, increases in current density gradients and thermal gradients thereof can be generated. The trench metal depths and width of metal are formed from copper. The electrical metal fuse generally comprises a current density ratio greater than 10 to 1.
Inventors
- 👤 Ta-Lee Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
83 words
A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device, said method comprising the steps of: forming at least two varying trench metal depths of a metal on a substrate to configure an electrical metal fuse thereon; and thereafter configuring at least two different widths of single metal lines of a metal to thereby generate increases in current density gradients and thermal gradients thereof, wherein said electrical metal fuse comprises a current density ratio greater than 10:1.
Claim 2
Independent Claim
83 words
A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device, said method comprising the steps of: forming at least two varying trench metal depths of a metal on a substrate to configure an electrical metal fuse thereon; and thereafter configuring at least two different widths of single metal lines of a metal to thereby generate increases in current density gradients and thermal gradients thereof, wherein said electrical metal fuse comprises a current density ratio greater than 10:1.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said metal of said at least two different widths of single metal lines comprises copper.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said at least two varying trench metal depths comprises at least two varying trench depths of copper for use in forming said electrical metal fuse upon said substrate.
Claim 5
Dependent Claim
36 words
The method of claim 1 wherein said at least two different widths of single metal lines of a metal comprises at least one metal width that is thinner than at least one other metal width thereof.
Claim 6
Dependent Claim
21 words
The method of claim 1 further comprising the step of: depositing at least one intermetal dielectric (IMD) layer upon said substrate.
Claim 7
Dependent Claim
24 words
The method of claim 5 further comprising the step of: thereafter performing a via photolithography operation followed by an etch operation upon said substrate.
Claim 8
Dependent Claim
28 words
The method of claim 6 further comprising the steps of: thereafter performing a metal photolithography operation upon said substrate; and thereafter performing an etch operation upon said substrate.
Claim 9
Dependent Claim
30 words
The method of claim 7 further comprising the step of: depositing a copper plating upon said substrate; and thereafter performing a copper Chemical Mechanical Polishing (CMP) operation upon said substrate.
Claim 10
Dependent Claim
64 words
The method of claim 8 wherein the step of thereafter performing a metal photolithography and etch step upon said substrate, further comprises the step of: performing a metal photolithography and etch step upon said substrate to deposit a thin layer thereof upon said substrate; and performing a metal photolithography and etch step upon said substrate to deposit a thick layer thereof upon said substrate.
Claim 11
Dependent Claim
91 words
The method of claim 1 further comprising the steps of: depositing at least one intermetal dielectric (IMD) layer upon said substrate; thereafter performing a via photolithography and etch step upon said substrate; performing a metal photolithography and etch step upon said substrate to deposit a thin layer thereof upon said substrate; performing a metal photolithography and etch step upon said substrate to deposit a thick layer thereof upon said substrate; performing a copper plating step upon said substrate; and thereafter performing a copper Chemical Mechanical Polishing (CMP) step upon said substrate.
Claim 12
Independent Claim
129 words
A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device, said method comprising the steps of: forming at least two varying trench metal depths of a metal on a substrate to configure an electrical metal fuse thereon, wherein said at least two varying trench metal depths comprises at least two varying trench depths of copper; configuring at least two different widths of single metal lines to generate an increase in current density gradients and thermal gradients thereof, such that said electrical metal fuse comprises a current density ratio greater than 10:1 and wherein said at least two different widths of single metal lines of a metal comprises at least one metal width that is thinner than at least one other metal width thereof.
Claim 13
Independent Claim
129 words
A method for forming an electrical metal fuse for use with a semiconductor integrated circuit device, said method comprising the steps of: forming at least two varying trench metal depths of a metal on a substrate to configure an electrical metal fuse thereon, wherein said at least two varying trench metal depths comprises at least two varying trench depths of copper; configuring at least two different widths of single metal lines to generate an increase in current density gradients and thermal gradients thereof, such that said electrical metal fuse comprises a current density ratio greater than 10:1 and wherein said at least two different widths of single metal lines of a metal comprises at least one metal width that is thinner than at least one other metal width thereof.
Claim 14
Dependent Claim
139 words
The method of claim 11 wherein the steps of forming at least two varying trench metal depths of a metal on a substrate to configure an electrical metal fuse thereon and configuring at least two different widths of single metal lines to generate an increase in current density gradients and thermal gradients thereof, further comprises the steps of: depositing at least one intermetal dielectric (IMD) layer upon said substrate; thereafter performing a via photolithography and etch step upon said substrate; performing a metal photolithography and etch step upon said substrate to deposit a thin layer thereof upon said substrate; performing a metal photolithography and etch step upon said substrate to deposit a thick layer thereof upon said substrate; performing a copper plating step upon said substrate; and thereafter performing a copper Chemical Mechanical Polishing (CMP) step upon said substrate.
References Cited (Backward Citations)
US6333546B1
Cited
US6261873B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-28 | 2006-10-28 | 2007-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-28 | 2010-10-28 | 2011-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-28 | 2014-10-28 | 2015-04-29 | $7700.00 | Window Closed / Lapsed |