US6534223B1
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US
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Method of forming a circuitry fabrication mask having a subtractive alternating phase shift region
Assignee: Micron Technology Inc
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Filing: 2000-08-01
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Granted: 2003-03-18
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Expires: 2020-08-01
Abstract
Abstract A light shielding layer is formed over a light transmissive substrate. The light shielding layer is patterned to have at least a portion having a first series of openings which alternate with a second series of openings. One of the first series of openings or the second series of openings is effectively masked while leaving the other of the first series of openings or the second series of openings effectively unmasked. While the one openings are effectively masked and the other openings are effectively unmasked, a species is ion implanted into the light transmissive substrate through the other openings. The implanted species effectively increases a wet etch rate of the light transmissive substrate in a wet etch chemistry compared to light transmissive substrate which is not effectively implanted with the species. The species implanted light transmissive substrate is wet etched through the other openings substantially selective to light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings as compared to the alternating one openings. Other implementations and aspects are contemplated.
Inventors
- 👤 Baorui Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:13
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
191 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing a wet etch rate of the light transmissive substrate in a wet etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; and wet etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 2
Independent Claim
191 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing a wet etch rate of the light transmissive substrate in a wet etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; and wet etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the first and second series of openings are totally of the same size and shape.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein the first and second series of openings are of the same size and shape in at least one cross section.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein the light transmissive substrate is transparent.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the masking comprises forming a masking material within the one openings, the masking material comprising photoresist.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein the masking comprises forming a masking material within the one openings, the masking material not comprising photoresist.
Claim 8
Dependent Claim
11 words
The method of claim 1 wherein the species comprises phosphorus ions.
Claim 9
Dependent Claim
11 words
The method of claim 1 wherein the species comprises gallium ions.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein the one openings are masked during the wet etching.
Claim 11
Dependent Claim
15 words
The method of claim 1 wherein the one openings are unmasked during the wet etching.
Claim 12
Dependent Claim
38 words
The method of claim 1 wherein the wet etching comprises etching to form bases of the alternating phase shift regions which are wider in at least one cross section than the other openings in the light shielding layer.
Claim 13
Dependent Claim
22 words
The method of claim 11 wherein the alternating phase shift regions are trapezoidal in shape in the at least one cross section.
Claim 14
Independent Claim
186 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting gallium ions into the light transmissive substrate through the other openings, the implanted gallium increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the gallium; and etching the gallium implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with gallium to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 15
Independent Claim
186 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting gallium ions into the light transmissive substrate through the other openings, the implanted gallium increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the gallium; and etching the gallium implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with gallium to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 16
Dependent Claim
11 words
The method of claim 13 wherein the etching comprises wet etching.
Claim 17
Dependent Claim
11 words
The method of claim 13 wherein the etching comprises dry etching.
Claim 18
Dependent Claim
22 words
The method of claim 13 wherein the masking comprises forming a masking material within the one openings, the masking material comprising photoresist.
Claim 19
Dependent Claim
23 words
The method of claim 13 wherein the masking comprises forming a masking material within the one openings, the masking material not comprising photoresist.
Claim 20
Dependent Claim
14 words
The method of claim 13 wherein the one openings are masked during the etching.
Claim 21
Dependent Claim
14 words
The method of claim 13 wherein the one openings are unmasked during the etching.
Claim 22
Independent Claim
209 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; and etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings which have bases which are wider in at least one cross section than the light shielding layer openings through which such alternating phase shift regions were etched.
Claim 23
Independent Claim
209 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; and etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings which have bases which are wider in at least one cross section than the light shielding layer openings through which such alternating phase shift regions were etched.
Claim 24
Dependent Claim
22 words
The method of claim 20 wherein the alternating phase shift regions are trapezoidal in shape in the at least one cross section.
Claim 25
Dependent Claim
11 words
The method of claim 20 wherein the etching comprises wet etching.
Claim 26
Dependent Claim
11 words
The method of claim 20 wherein the etching comprises dry etching.
Claim 27
Dependent Claim
22 words
The method of claim 20 wherein the masking comprises forming a masking material within the one openings, the masking material comprising photoresist.
Claim 28
Dependent Claim
23 words
The method of claim 20 wherein the masking comprises forming a masking material within the one openings, the masking material not comprising photoresist.
Claim 29
Dependent Claim
14 words
The method of claim 20 wherein the one openings are masked during the etching.
Claim 30
Dependent Claim
14 words
The method of claim 20 wherein the one openings are unmasked during the etching.
Claim 31
Dependent Claim
11 words
The method of claim 20 wherein the species comprises phosphorus ions.
Claim 32
Dependent Claim
11 words
The method of claim 20 wherein the species comprises gallium ions.
Claim 33
Independent Claim
205 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; after the ion implanting, unmasking the one openings; after the unmasking and while the one openings are unmasked, etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 34
Independent Claim
205 words
A method of forming a circuitry fabrication mask having a subtractive alternating phase shift region, comprising: forming a light shielding layer over a light transmissive substrate; patterning the light shielding layer to have at least a portion having a first series of openings which alternate with a second series of openings; effectively masking one of the first series of openings or the second series of openings while leaving the other of the first series of openings or the second series of openings effectively unmasked; while the one openings are effectively masked and the other openings are effectively unmasked, ion implanting a species into the light transmissive substrate through the other openings, the implanted species increasing an etch rate of the light transmissive substrate in an etch chemistry compared to the light transmissive substrate which is not effectively implanted with the species; after the ion implanting, unmasking the one openings; after the unmasking and while the one openings are unmasked, etching the species implanted light transmissive substrate through the other openings substantially selective to the light transmissive substrate which is not effectively implanted with the species effective to at least partially form alternating phase shift regions through the other openings as compared to the one openings.
Claim 35
Dependent Claim
22 words
The method of claim 30 wherein the masking comprises forming a masking material within the one openings, the masking material comprising photoresist.
Claim 36
Dependent Claim
23 words
The method of claim 30 wherein the masking comprises forming a masking material within the one openings, the masking material not comprising photoresist.
Claim 37
Dependent Claim
11 words
The method of claim 30 wherein the etching comprises wet etching.
Claim 38
Dependent Claim
11 words
The method of claim 30 wherein the etching comprises dry etching.
Claim 39
Dependent Claim
11 words
The method of claim 30 wherein the species comprises phosphorus ions.
Claim 40
Dependent Claim
11 words
The method of claim 30 wherein the species comprises gallium ions.
References Cited (Backward Citations)
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