Semiconductor device and its manufacturing method capable of reducing low frequency noise

Claim 2

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a third semiconductor layer formed on a part of said second semiconductor layer; a first electrode formed on said third semiconductor layer; and a second electrode formed on said first semiconductor layer in contact with said second semiconductor layer and apart from said third semiconductor layer; thus forming a diode.

Claim 3

The semiconductor device as set forth in claim 1 , wherein said first and third semiconductor layers are of one conductivity type, and said second semiconductor layer is undoped, so that said diode is a Schottky barrier diode.

Claim 4

The semiconductor device as set forth in claim 1 , wherein said first, second and third semiconductor layers are of one conductivity type, so that said diode is a Schottky barrier diode.

Claim 5

The semiconductor device as set forth in claim 1 , wherein said first and third semiconductor layers have a different material from that of said second semiconductor layer.

Claim 6

The semiconductor device as set forth in claim 1 , wherein said second electrode is buried in said first semiconductor layer.

Claim 7

The semiconductor device as set forth in claim 1 , further comprising: a fourth semiconductor layer formed on said second semiconductor layer; and a fifth semiconductor layer formed on said fourth semiconductor layer, said second and fifth semiconductor layers being made of a material different from that of said first, third and fourth semiconductor layers.

Claim 8

The semiconductor device as set forth in claim 1 , further comprising a fourth semiconductor layer formed on said third semiconductor layer, said first and third semiconductor layers being of a first conductivity type, said fourth semiconductor layer being a second conductivity type opposite to said first conductivity type, so that said diode is a tunnel diode.

Claim 9

The semiconductor device as set forth in claim 6 , wherein said second semiconductor layer is undoped.

Claim 10

The semiconductor device as set forth in claim 6 , wherein said second semiconductor layer is of said first conductivity type.

Claim 11

The semiconductor device as set forth in claim 1 , further comprising; a fourth semiconductor layer of an i-type conductivity type formed on said third semiconductor layer; and a fifth semiconductor layer formed on said fourth semiconductor layer, said first and third semiconductor layers being of a first conductivity type, said fifth semiconductor layer being of a second conductivity type opposite to said first conductivity type, so that said diode is a PIN diode.

Claim 12

The semiconductor device as set forth in claim 10 , wherein said second semiconductor layer is undoped.

Claim 13

The semiconductor device as set forth in claim 10 , wherein said second semiconductor layer is of said first conductivity type.

Claim 14

The semiconductor device as set forth in claim 1 , further comprising: an i-type channel layer between said semiconductor substrate and said first semiconductor layer; and a charge supply layer formed between said i-type channel layer and said first semiconductor layer, said i-type channel layer, said charge supply layer and said first semiconductor layer forming a heterojunction field effect transistor separated from said diode.

Claim 15

The semiconductor device as set forth in claim 13 , wherein said diode and said field effect transistor are separated by an isolation region therebetween in said i-type channel layer and said charge supply layer.

Claim 16

The semiconductor device as set forth in claim 1 , further comprising; a semiconductor base layer having a conductivity type opposite to that of said third semiconductor layer formed on said third semiconductor layer; a semiconductor emitter layer having the same conductivity type as that of said third semiconductor layer formed on said semiconductor base layer; and a semiconductor emitter cap layer having the same conductivity type as that of said third semiconductor layer formed on said semiconductor emitter layer; said first, second and third semiconductor layers,said semiconductor base layer, said semiconductor emitter layer and said semiconductor emitter cap layer forming a heterojunction bipolar transistor separated from said diode .

Claim 17

The semiconductor device as set forth in claim 15 , wherein said diode and said bipolar transistor are separated by a groove formed in said first semiconductor layer and said semiconductor substrate.

Claim 18

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a third semiconductor layer formed on said first semiconductor layer; and a fourth semiconductor layer formed on said third semiconductor layer, said second and fourth semiconductor layers being made of a material different from that of said first, second and third semiconductor layers.

Claim 19

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a third semiconductor layer formed on said first semiconductor layer; and a fourth semiconductor layer formed on said third semiconductor layer, said second and fourth semiconductor layers being made of a material different from that of said first, second and third semiconductor layers.

Claim 20

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; and a third semiconductor layer formed on said second semiconductor layer, said first and second semiconductor layers being of a first conductivity type, said third semiconductor layer being a second conductivity type opposite to said first conductivity type, so that said diode is a tunnel diode.

Claim 21

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; and a third semiconductor layer formed on said second semiconductor layer, said first and second semiconductor layers being of a first conductivity type, said third semiconductor layer being a second conductivity type opposite to said first conductivity type, so that said diode is a tunnel diode.

Claim 22

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a third semiconductor layer of an i-type conductivity type second on said second semiconductor layer; and a fourth semiconductor layer formed on said third semiconductor layer, said first and second semiconductor layers being of a first conductivity type, said fourth semiconductor layer being of a second conductivity type opposite to said first conductivity type, so that said diode is a PIN diode.

Claim 23

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a third semiconductor layer of an i-type conductivity type second on said second semiconductor layer; and a fourth semiconductor layer formed on said third semiconductor layer, said first and second semiconductor layers being of a first conductivity type, said fourth semiconductor layer being of a second conductivity type opposite to said first conductivity type, so that said diode is a PIN diode.

Claim 24

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; an i-type channel layer between said semiconductor substrate and said first semiconductor layer; and a charge supply layer formed between said i-type channel layer and said first semiconductor layer, said i-type channel layer, said charge supply layer and said first semiconductor layer forming a heterojunction field effect transistor separated from said diode.

Claim 25

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; an i-type channel layer between said semiconductor substrate and said first semiconductor layer; and a charge supply layer formed between said i-type channel layer and said first semiconductor layer, said i-type channel layer, said charge supply layer and said first semiconductor layer forming a heterojunction field effect transistor separated from said diode.

Claim 26

The semiconductor device as set forth in claim 20 , wherein said diode and said field effect transistor are separated by an isolation region therebetween in said i-type channel layer and said charge supply layer.

Claim 27

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a semiconductor base layer having a conductivity type opposite to that of said third semiconductor layer formed on said second semiconductor layer; a semiconductor emitter layer having the same conductivity type as that of said second semiconductor layer formed on said semiconductor base layer; and a semiconductor emitter cap layer having the same conductivity type as that of said second semiconductor layer formed on said semiconductor emitter layer, said first and second semiconductor layers, said semiconductor base layer, said semiconductor emitter layer and said semiconductor emitter cap layer forming a heterojunction bipolar transistor separated from said diode.

Claim 28

A semiconductor device comprising: a semiconductor substrate; a first semiconductor layer formed on said semiconductor substrate; a second semiconductor layer formed on a part of said first semiconductor layer; a first electrode formed on said second semiconductor layer; a second electrode buried in said first semiconductor layer and apart from said second semiconductor layer, thus forming a diode; a semiconductor base layer having a conductivity type opposite to that of said third semiconductor layer formed on said second semiconductor layer; a semiconductor emitter layer having the same conductivity type as that of said second semiconductor layer formed on said semiconductor base layer; and a semiconductor emitter cap layer having the same conductivity type as that of said second semiconductor layer formed on said semiconductor emitter layer, said first and second semiconductor layers, said semiconductor base layer, said semiconductor emitter layer and said semiconductor emitter cap layer forming a heterojunction bipolar transistor separated from said diode.

Claim 29

The semiconductor device as set forth in claim 22 , wherein said diode and said bipolar transistor are separated by a groove formed in said first semiconductor layer and said semiconductor substrate.