US6476462B2
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MOS-type semiconductor device and method for making same
Assignee: Texas Instruments Inc
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Filing: 2000-12-07
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Granted: 2002-11-05
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Expires: 2020-12-07
Abstract
Abstract An MOS-type semiconductor device comprises two semiconductors separated by an insulator. The two semiconductors comprise monocrystal semiconductors, each having a crystallographic orientation with respect to the insulator (or other crystallographic/semiconductor property) different to the crystallographic orientation (or other respective property) of the other semiconductor. This arrangement of crystallographic orientations (and other crystallographic/semiconductor properties) can yield reduced unintended electron tunneling or current leakage through the insulator vis a vis a semiconductor device in which such an arrangement is not used. Methods for forming the MOS-type semiconductor devices of the invention are also provided.
Inventors
- 👤 Tatsuo Shimizu
- 👤 Mieko Matsumura
- 👤 Shigenobu Kimura
- 👤 Yutaka Hirose
- 👤 Yasuhiro Nishioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/40; H10D62/405; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/60; H10D64/66; H10D64/661; H10D62/80; H10D62/83; H10P; H10P14/00; H10P14/40; H10P14/416; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
An MOS-type semiconductor device comprising a first semiconductor, an insulator adjacent said first semiconductor, and a second semiconductor, wherein said first and second semiconductors are monocrystalline semiconductors having crystallographic axes and wherein the crystallographic axes of said first and second semiconductors are arranged in directions different to each other; wherein the [100] crystallographic orientation of said first semiconductor is orthogonal to a plane defined by the junction between said first semiconductor and said insulator and the [111] crystallographic orientation of said second semiconductor is orthogonal to the same plane.
Claim 2
Dependent Claim
89 words
An MOS-type semiconductor device comprising a first semiconductor, an insulator adjacent said first semiconductor, and a second semiconductor, wherein said first and second semiconductors are monocrystalline semiconductors having crystallographic axes and wherein the crystallographic axes of said first and second semiconductors are arranged in directions different to each other; wherein the [100] crystallographic orientation of said first semiconductor is orthogonal to a plane defined by the junction between said first semiconductor and said insulator and the [111] crystallographic orientation of said second semiconductor is orthogonal to the same plane.
Claim 3
Dependent Claim
17 words
The MOS-type semiconductor device of claim 1 , wherein said first and second semiconductors comprise silicon electrodes.
Claim 4
Dependent Claim
15 words
The MOS-type semiconductor device of claim 1 wherein said insulator comprises an oxide thin layer.
Claim 5
Dependent Claim
15 words
The MOS-type semiconductor of claim 2 , wherein said insulator comprises an oxide thin layer.
Claim 6
Dependent Claim
36 words
The MOS-type semiconductor of claim 1 , wherein said insulator comprises an insulator formed by oxidation of a portion of said first semiconductor and wherein said second semiconductor has an atomically-flat surface bonded to said insulator.
Claim 7
Dependent Claim
24 words
The MOS-type semiconductor of claim 1 , wherein said first semiconductor comprises an integrated circuit substrate and said second semiconductor comprises a gate electrode.
Claim 8
Dependent Claim
13 words
The MOS-type semiconductor of claim 1 , wherein said insulator comprises tantalum oxide.
Claim 9
Dependent Claim
16 words
The MOS-type semiconductor of claim 1 , wherein said first and second semiconductors comprise silicon electrodes.
Claim 10
Dependent Claim
16 words
The MOS-type semiconductor device of claim 8 , wherein said insulator comprises an oxide thin layer.
Claim 11
Dependent Claim
36 words
The MOS-type semiconductor of claim 8 , wherein said insulator comprises an insulator formed by oxidation of a portion of said first semiconductor and wherein said second semiconductor has an atomically-flat surface bonded to said insulator.
Claim 12
Dependent Claim
24 words
The MOS-type semiconductor of claim 8 , wherein said first semiconductor comprises an integrated circuit substrate and said second semiconductor comprises a gate electrode.
Claim 13
Dependent Claim
29 words
The MOS-type semiconductor of claim 8 , wherein the conductivity of at least a portion of said first semiconductor and said second semiconductor are altered by an added dopant.
Claim 14
Dependent Claim
13 words
The MOS-type semiconductor of claim 1 , wherein said second semiconductor comprises germanium.
References Cited (Backward Citations)
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