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US6462628B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Isolator device with built-in power amplifier and embedded substrate capacitor

Assignee: TDK Corp
•
Filing: 2001-03-26
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Granted: 2002-10-08
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Expires: 2021-03-26
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Abstract

Abstract An isolator device with a built-in power amplifier includes a single dielectric multi-layered substrate, a high frequency power amplifier circuit, an isolator element, and circuit elements provided to the dielectric multi-layered substrate. The high frequency power amplifier circuit and the isolator element are connected with each other through the circuit elements and united with the single dielectric multi-layered substrate.

Inventors

  • 👤 Ryoichi Kondo
  • 👤 Takahide Kurahashi
  • 👤 Shinya Nakai
  • 👤 Hajime Kato

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 14:38
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/60; H03F3/601; H01; H01P; H01P1/00; H01P1/32; H01P1/38; H01P1/383; H01P1/387; H03F1/00; H03F1/56; H03F3/20; H03F3/24; H05; H05K; H05K1/00; H05K1/18; H05K1/182; H03F2200/00; H03F2200/372; H04; H04B; H04B1/00; H04B1/02; H04B1/04; H04B2001/0408

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 98 words
An isolator device with a built-in power amplifier, comprising single dielectric multi-layered substrate, a high frequency power amplifier circuit, an isolator element, and circuit elements provided to the dielectric multi-layered substrate, said high frequency power amplifier circuit and said isolator element being connected with each other through said circuit elements, said circuit elements including a capacitor section of said isolator element, said capacitor section of said isolator element being embedded in said dielectric multi-layered substrate, said high frequency power amplifier circuit and said isolator element being united with said single dielectric multi-layered substrate which has said embedded capacitor.
Claim 2
Dependent Claim 98 words
An isolator device with a built-in power amplifier, comprising single dielectric multi-layered substrate, a high frequency power amplifier circuit, an isolator element, and circuit elements provided to the dielectric multi-layered substrate, said high frequency power amplifier circuit and said isolator element being connected with each other through said circuit elements, said circuit elements including a capacitor section of said isolator element, said capacitor section of said isolator element being embedded in said dielectric multi-layered substrate, said high frequency power amplifier circuit and said isolator element being united with said single dielectric multi-layered substrate which has said embedded capacitor.
Claim 3
Dependent Claim 24 words
The device as claimed in claim 1 , wherein at least a part of said circuit elements is embedded in said dielectric multi-layered substrate.
Claim 4
Dependent Claim 24 words
The device as claimed in claim 1 , wherein at least a part of said circuit elements is mounted on said dielectric multi-layered substrate.
Claim 5
Dependent Claim 40 words
The device as claimed in claim 1 , wherein an impedance matching circuit for matching an output impedance of said high frequency power amplifier circuit with an input impedance of said isolator element is embedded in said dielectric multi-layered substrate.
Claim 6
Dependent Claim 40 words
The device as claimed in claim 1 , wherein an impedance matching circuit for matching an output impedance of said high frequency power amplifier circuit with an input impedance of said isolator element is mounted on said dielectric multi-layered substrate.
Claim 7
Dependent Claim 33 words
The device as claimed in claim 1 , wherein a main part of said isolator element is integrally inserted into a fitting section formed by removing a part of said dielectric multi-layered substrate.
Claim 8
Dependent Claim 20 words
The device as claimed in claim 6 , wherein said fitting section is a cutout of said dielectric multi-layered substrate.
Claim 9
Dependent Claim 21 words
The device as claimed in claim 6 , wherein said fitting section is a via hole of said dielectric multi-layered substrate.
Claim 10
Dependent Claim 30 words
The device as claimed in claim 1 , wherein said isolator element has a first port electrically connected to said high frequency power amplifier circuit through an impedance matching circuit.
Claim 11
Dependent Claim 47 words
The device as claimed in claim 1 , wherein said isolator element has a first port electrically connected to said high frequency power amplifier circuit, and wherein said first port has an input impedance almost matched with an output impedance of said high frequency power amplifier circuit.
Claim 12
Dependent Claim 31 words
The device as claimed in claim 10 , wherein said first port of said isolator element is electrically connected to said high frequency power amplifier circuit through an impedance matching circuit.
Claim 13
Dependent Claim 27 words
The device as claimed in claim 10 , wherein said isolator element has a second port having an impedance different from the impedance of said first port.
Claim 14
Dependent Claim 24 words
The device as claimed in claim 12 , wherein the impedance of said first port is lower than the impedance of said second port.
Claim 15
Dependent Claim 21 words
The device as claimed in claim 12 , wherein the impedance of said second port is equal to a transmission-line impedance.
Claim 16
Dependent Claim 54 words
The device as claimed in claim 12 , wherein said circulator element includes a magnetic material block and triangularly symmetric center conductors formed in said magnetic material block, and wherein a width of said center conductor connected to said first port is different from a width of the center conductors connected to other ports.
Claim 17
Dependent Claim 61 words
The device as claimed in claim 1 , wherein said isolator element has a circulator element, an upper surface of said circulator element being in almost the same plane as an upper surface of said dielectric multi-layered substrate, and wherein terminal electrodes of first and second ports of said circulator element are positioned at the upper surface of said circulator element.
Claim 18
Dependent Claim 66 words
The device as claimed in claim 1 , wherein said isolator element has a circulator element, an upper surface of said circulator element being in almost the same plane as an upper surface of said dielectric multi-layered substrate, and wherein terminal electrodes of first and second ports of said circulator element are positioned at the upper surface and a lower surface of said circulator element, respectively.
Claim 19
Dependent Claim 27 words
The device as claimed in claim 1 , wherein said high frequency power amplifier circuit and said isolator element are covered by a common single shielding case.
Claim 20
Dependent Claim 64 words
The device as claimed in claim 1 , wherein said device further comprises an SAW device mounted on said dielectric multi-layered substrate and coupled to an input of said high frequency power amplifier circuit, and a matching circuit embedded in said dielectric multi-layered substrate to match an output impedance of said SAW device with an input impedance of said high frequency power amplifier circuit.
Claim 21
Dependent Claim 64 words
The device as claimed in claim 1 , wherein said device further comprises an SAW device mounted on said dielectric multi-layered substrate and coupled to an input of said high frequency power amplifier circuit, and a matching circuit mounted on said dielectric multi-layered substrate to match an output impedance of said SAW device with an input impedance of said high frequency power amplifier circuit.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2005-10-07 2006-04-08 2006-10-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2009-10-07 2010-04-08 2010-10-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2013-10-07 2014-04-08 2014-10-08 $7700.00 Window Closed / Lapsed

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