US6461436B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and process of improving atomic layer deposition chamber performance
Assignee: Micron Technology Inc
•
Filing: 2001-10-15
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Granted: 2002-10-08
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Expires: 2021-10-15
Abstract
Abstract An apparatus and process for atomic layer deposition that minimizes mixing of the chemicals and reactive gases is disclosed. The first precursor and second precursor are only mixed with other chemicals and reactive gases when and where desired by installing and monitoring a dispensing fore-line. Also, independent and dedicated chamber outlets, isolation valves, exhaust fore-lines, and exhaust pumps are provided that are activated for the specific gas when needed.
Inventors
- 👤 Philip H. Campbell
- 👤 David J. Kubista
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:26
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45544; C23C16/4401; C23C16/4412
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
147 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; an isolation valve directly coupled to said chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said reactor chamber when said isolation valve is in a closed state; and a dispensing fore-line comprising a first end and a second end, wherein said fist end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
Claim 2
Dependent Claim
147 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; an isolation valve directly coupled to said chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said reactor chamber when said isolation valve is in a closed state; and a dispensing fore-line comprising a first end and a second end, wherein said fist end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
Claim 3
Dependent Claim
21 words
An apparatus as claimed in claim 1 wherein said first precursor inlet and said second precursor inlet share a common opening.
Claim 4
Dependent Claim
20 words
An apparatus as claimed in claim 1 wherein said first precursor inlet and said second precursor inlet have separate openings.
Claim 5
Dependent Claim
14 words
An apparatus as claimed in claim 1 wherein said apparatus comprises a purging valve.
Claim 6
Dependent Claim
18 words
An apparatus as claimed in claim 1 wherein said process reactor chamber further includes a shower head device.
Claim 7
Dependent Claim
156 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet; a vapor supply coupled to said first precursor inlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; an isolation valve directly coupled to said chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said reactor chamber when said isolation valve is in a closed state; and a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
Claim 8
Dependent Claim
156 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet; a vapor supply coupled to said first precursor inlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; an isolation valve directly coupled to said chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said reactor chamber when said isolation valve is in a closed state; and a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
Claim 9
Dependent Claim
177 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said first isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said process reactor chamber when said isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; and a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
Claim 10
Dependent Claim
177 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; an exhaust fore-line; an exhaust pump coupled to said first isolation valve by said exhaust fore-line wherein said isolation valve, said exhaust fore-line, and said exhaust pump are arranged to define an exhaust path isolated from said process reactor chamber when said isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; and a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
Claim 11
Dependent Claim
194 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; and a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
Claim 12
Dependent Claim
194 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; and a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
Claim 13
Dependent Claim
237 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 14
Dependent Claim
237 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 15
Dependent Claim
22 words
An apparatus as claimed in claim 9 wherein said second end of said dispensing fore-line is coupled to said first exhaust fore-line.
Claim 16
Dependent Claim
22 words
An apparatus as claimed in claim 9 wherein said second end of said dispensing fore-line is coupled to said first exhaust pump.
Claim 17
Dependent Claim
246 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber, a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 18
Dependent Claim
246 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber, a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 19
Dependent Claim
22 words
An apparatus as claimed in claim 12 wherein said second end of said dispensing fore-line is coupled to said first exhaust fore-line.
Claim 20
Dependent Claim
22 words
An apparatus as claimed in claim 12 wherein said second end of said dispensing fore-line is coupled to said first exhaust pump.
Claim 21
Dependent Claim
258 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 22
Dependent Claim
258 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 23
Dependent Claim
267 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 24
Dependent Claim
267 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a dispensing fore-line comprising a first end and a second end; a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; and a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state.
Claim 25
Dependent Claim
273 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; and a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
Claim 26
Dependent Claim
273 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; and a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
Claim 27
Dependent Claim
23 words
An apparatus as claimed in claim 17 wherein said second end of said first dispensing fore-line is coupled to said first exhaust fore-line.
Claim 28
Dependent Claim
23 words
An apparatus as claimed in claim 17 wherein said second end of said first dispensing fore-line is coupled to said first exhaust pump.
Claim 29
Dependent Claim
22 words
An apparatus as claimed in claim 17 wherein said second end of second dispensing fore-line is coupled to said second exhaust fore-line.
Claim 30
Dependent Claim
22 words
An apparatus as claimed in claim 17 wherein said second end of second dispensing fore-line is coupled to said second exhaust pump.
Claim 31
Dependent Claim
282 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; and a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
Claim 32
Dependent Claim
282 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; and a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
Claim 33
Dependent Claim
23 words
An apparatus as claimed in claim 22 wherein said second end of said first dispensing fore-line is coupled to said first exhaust fore-line.
Claim 34
Dependent Claim
23 words
An apparatus as claimed in claim 22 wherein said second end of said first dispensing fore-line is coupled to said first exhaust pump.
Claim 35
Dependent Claim
22 words
An apparatus as claimed in claim 22 wherein said second end of second dispensing fore-line is coupled to said second exhaust fore-line.
Claim 36
Dependent Claim
22 words
An apparatus as claimed in claim 22 wherein said second end of second dispensing fore-line is coupled to said second exhaust pump.
Claim 37
Dependent Claim
322 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end; a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; a second dispensing fore-line comprising a first end and a second end; and a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
Claim 38
Dependent Claim
322 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end; a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; a second dispensing fore-line comprising a first end and a second end; and a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
Claim 39
Dependent Claim
331 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end; a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; a second dispensing fore-line comprising a first end and a second end; and a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
Claim 40
Dependent Claim
331 words
An atomic layer deposition apparatus comprising: a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet; a first dispensing valve coupled to said first precursor inlet of said process reactor chamber; a vapor supply coupled to said first precursor inlet; a second dispensing valve coupled to said second precursor inlet of said process reactor chamber; a first isolation valve directly coupled to said first chamber outlet of said process reactor chamber; a first exhaust fore-line; a first exhaust pump coupled to said first isolation valve by said first exhaust fore-line wherein said first isolation valve, said first exhaust fore-line, and said first exhaust pump are arranged to define a first exhaust path isolated from said process reactor chamber when said first isolation valve is in a closed state; a first dispensing fore-line comprising a first end and a second end; a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump; a second isolation valve directly coupled to said second chamber outlet of said process reactor chamber; a second exhaust fore-line; a second exhaust pump coupled to said second isolation valve by said second exhaust fore-line wherein said second isolation valve, said second exhaust fore-line, and said second exhaust pump are arranged to define a second exhaust path isolated from said process reactor chamber when said second isolation valve is in a closed state; a second dispensing fore-line comprising a first end and a second end; and a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
Claim 41
Dependent Claim
70 words
An atomic layer deposition apparatus comprising: a process reactor chamber; an first isolation valve directly coupled to a first chamber outlet of said process reactor; a first exhaust pump coupled to said first isolation valve by a first fore-line; a second isolation valve directly coupled to a first chamber outlet of said process reactor; and a second exhaust pump coupled to said second isolation valve by a second exhaust fore-line.
Claim 42
Dependent Claim
70 words
An atomic layer deposition apparatus comprising: a process reactor chamber; an first isolation valve directly coupled to a first chamber outlet of said process reactor; a first exhaust pump coupled to said first isolation valve by a first fore-line; a second isolation valve directly coupled to a first chamber outlet of said process reactor; and a second exhaust pump coupled to said second isolation valve by a second exhaust fore-line.
Claim 43
Dependent Claim
21 words
An apparatus as claimed in claim 29 wherein said first precursor inlet and said second precursor inlet share a common opening.
Claim 44
Dependent Claim
20 words
An apparatus as claimed in claim 29 wherein said first precursor inlet and said second precursor inlet have separate openings.
Claim 45
Dependent Claim
14 words
An apparatus as claimed in claim 29 wherein said apparatus comprises a purging valve.
Claim 46
Dependent Claim
18 words
An apparatus as claimed in claim 29 wherein said process reactor chamber further includes a shower head device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-07 | 2006-04-08 | 2006-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-07 | 2010-04-08 | 2010-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-07 | 2014-04-08 | 2014-10-08 | $7700.00 | Window Closed / Lapsed |