US6436786B1
Expired / Lapsed
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Method for fabricating a semiconductor device
Assignee: RPX Corp
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Filing: 2000-05-12
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Granted: 2002-08-20
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Expires: 2020-05-12
Abstract
Abstract A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.
Inventors
- 👤 Akihiko Tsuzumitani
- 👤 Yasutoshi Okuno
- 👤 Yoshihiro Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/682
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
71 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming an electrode out of the conductor film by patterning the conductor film into a predetermined shape; and c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film.
Claim 2
Independent Claim
71 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming an electrode out of the conductor film by patterning the conductor film into a predetermined shape; and c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film.
Claim 3
Dependent Claim
12 words
The method of claim 1 , wherein the non-oxidizing ambient contains hydrogen.
Claim 4
Independent Claim
82 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming a lower electrode out of the conductor film by patterning the conductor film into a predetermined shape; c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film; and d) forming a capacitive insulating film on the lower electrode.
Claim 5
Independent Claim
82 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming a lower electrode out of the conductor film by patterning the conductor film into a predetermined shape; c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film; and d) forming a capacitive insulating film on the lower electrode.
Claim 6
Dependent Claim
24 words
The method of claim 3 , wherein the capacitive insulating film is made of tantalum pentoxide, strontium titanate, barium titanate or barium strontium titanate.
Claim 7
Dependent Claim
16 words
The method of claim 3 , wherein the step c) is performed before the step d).
Claim 8
Dependent Claim
16 words
The method of claim 3 , wherein the step c) is performed after the step b).
Claim 9
Dependent Claim
25 words
The method of claim 3 , wherein the step a) comprises the step of forming the conductor film in the shape of a bottomed cylinder.
Claim 10
Independent Claim
88 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming a lower electrode out of the conductor film by patterning the conductor film into a predetermined shape; c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film; and d) forming a capacitive insulating film on the lower electrode, wherein the non-oxidizing ambient contains hydrogen.
Claim 11
Independent Claim
88 words
A method for fabricating a semiconductor device, comprising the steps of: a) forming a conductor film made of ruthenium over a substrate; b) forming a lower electrode out of the conductor film by patterning the conductor film into a predetermined shape; c) annealing the electrode and the substrate within a non-oxidizing ambient, thereby forming a plurality of steps on the surfaces of crystal grains of ruthenium contained in the conductor film; and d) forming a capacitive insulating film on the lower electrode, wherein the non-oxidizing ambient contains hydrogen.
References Cited (Backward Citations)
US5998225A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-19 | 2006-02-18 | 2006-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-19 | 2010-02-18 | 2010-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-19 | 2014-02-18 | 2014-08-20 | $7700.00 | Window Closed / Lapsed |