US6417575B2
Expired / Lapsed
US
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Semiconductor device and fabrication process therefor
Assignee: Renesas Electronics Corp
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Filing: 2000-12-01
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Granted: 2002-07-09
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Expires: 2020-12-01
Abstract
Abstract A semiconductor device includes a pad electrode and a main electrode layer of the pad electrode has a plan view shape of one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded. The main electrode layer is connected to a lower electrode layer beneath the man electrode layer via a connection hole interposed therebetween and a lower protruding section is provided beneath the lower electrode layer. A stress buffer insulating partition and a stress buffer protruding section are more preferably provided at corners of the layers, connection hole and lower protruding section.
Inventors
- 👤 Shigeru Harada
- 👤 Takeru Matsuoka
- 👤 Hiroki Takewaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:37
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/071; H10W72/012; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/20; H10W72/251; H10W72/29; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/9232; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W74/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
202 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of said pad section at least at a bottom and a side wall of said pad section, wherein a material of said underlying film is harder than said electrode material and at least part of an upper surface of said pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode comprises: a lower protruding section protruding downward from said pad electrode, said lower protruding section having a cross-sectional area smaller than said pad electrode and a shape of a plan view of said lower protruding section is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 2
Dependent Claim
202 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of said pad section at least at a bottom and a side wall of said pad section, wherein a material of said underlying film is harder than said electrode material and at least part of an upper surface of said pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode comprises: a lower protruding section protruding downward from said pad electrode, said lower protruding section having a cross-sectional area smaller than said pad electrode and a shape of a plan view of said lower protruding section is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 3
Dependent Claim
28 words
A semiconductor device according to claim 1 , wherein said lower protruding section comprises: a stress buffer insulating partition dividing said pad section in a corner region thereof.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 1 , wherein said lower protruding section comprises: a stress buffer protruding section protruding at a corner thereof.
Claim 5
Dependent Claim
202 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of said pad section at least at a bottom and a side wall of said pad section, wherein a material of said underlying film is harder than said electrode material and at least part of an upper surface of said pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode includes a main electrode layer made of said electrode material and an upper electrode layer contacting an upper surface of said main electrode layer, and a shape of a plan view of said upper electrode layer is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 6
Dependent Claim
202 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of said pad section at least at a bottom and a side wall of said pad section, wherein a material of said underlying film is harder than said electrode material and at least part of an upper surface of said pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode includes a main electrode layer made of said electrode material and an upper electrode layer contacting an upper surface of said main electrode layer, and a shape of a plan view of said upper electrode layer is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 4 , wherein said main electrode layer comprises: a stress buffer insulating partition dividing said pad section in a corner region thereof.
Claim 8
Dependent Claim
24 words
A semiconductor device according to claim 4 , wherein said main electrode layer comprises: a stress buffer protruding section protruding at a corner thereof.
Claim 9
Dependent Claim
254 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of the pad section at least at a bottom and a side wall of said pad section, wherein a material of the underlying film is harder than said electrode material and at least part of an upper surface of the pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode comprises: a main electrode layer made of said electrode material; and a lower electrode layer connected to said main electrode layer, on a lower side of said main electrode layer, via a connection hole interposed therebetween, said connection hole having an outer periphery of a shape along and in the inside vicinity of an outer periphery of a shape of a plan view of said main electrode layer, and a shape of a plan view of at least one of said lower electrode layer and said connection hole is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 10
Dependent Claim
254 words
A semiconductor device comprising: a pad electrode comprising: a pad section made of substantially a conductive electrode material; and an underlying film covering at least part of the pad section at least at a bottom and a side wall of said pad section, wherein a material of the underlying film is harder than said electrode material and at least part of an upper surface of the pad section is exposed for connection to a wire, a shape of a plan view of said pad electrode is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded, said pad electrode comprises: a main electrode layer made of said electrode material; and a lower electrode layer connected to said main electrode layer, on a lower side of said main electrode layer, via a connection hole interposed therebetween, said connection hole having an outer periphery of a shape along and in the inside vicinity of an outer periphery of a shape of a plan view of said main electrode layer, and a shape of a plan view of at least one of said lower electrode layer and said connection hole is one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 11
Dependent Claim
36 words
A semiconductor device according to claim 7 , wherein at least one of said lower electrode layer and said connection hole comprises: a stress buffer insulating partition dividing said pad section in an corner region thereof.
Claim 12
Dependent Claim
32 words
A semiconductor device according to claim 7 , wherein at least one of said lower electrode layer and said connection hole comprises: a stress buffer protruding section protruding at a corner thereof.
Claim 13
Dependent Claim
90 words
A semiconductor device according to claim 7 , wherein said lower electrode layer comprises: a lower protruding section protruding downward from said lower electrode layer, said lower protruding section having a cross-sectional area smaller than said lower electrode layer and a shape of a plan view of said lower protruding section being one selected from the group consisting of a near circle, a near ellipse, a near polygon with at least one internal angle larger than 90 degrees and a near polygon with at least one corner chamfered or rounded.
Claim 14
Dependent Claim
28 words
A semiconductor device according to claim 10 , wherein said lower protruding section comprises: a stress buffer insulating partition dividing said pad section in a corner region thereof.
Claim 15
Dependent Claim
24 words
A semiconductor device according to claim 10 , wherein said lower protruding section comprises: a stress buffer protruding section protruding at a corner thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-07-08 | 2006-01-07 | 2006-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-08 | 2010-01-07 | 2010-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-08 | 2014-01-07 | 2014-07-09 | $7700.00 | Window Closed / Lapsed |