US6417570B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Layered dielectric film structure suitable for gate dielectric application in sub-0.25 μm technologies
Assignee: Nokia of America Corp
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Filing: 1999-06-17
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Granted: 2002-07-09
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Expires: 2019-06-17
Abstract
Abstract A layered gate dielectric structure suppresses boron diffusion and provides a gate dielectric structure which is free of trap sites and pinholes, and which does not introduce mobility or drive current problems. The layered gate dielectric structure includes a film which is originally formed as a structurally deficient nitride film which is subsequently converted to either an oxynitride film or a stoichiometric nitride film.
Inventors
- 👤 Yi Ma
- 👤 Pradip K. Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:24
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D64/01342
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
75 words
A semiconductor device comprising: a. an oxide film formed over a channel region within a semiconductor substrate; b. a silicon nitride layer formed over the oxide film, the silicon nitride layer characterized as being a continuously bonded material essentially free of trap sites and having a film stress being less than an associated film stress of a conventionally formed, stoichiometric silicon nitride film; and c. a polysilicon gate electrode disposed over the silicon nitride layer.
Claim 2
Dependent Claim
75 words
A semiconductor device comprising: a. an oxide film formed over a channel region within a semiconductor substrate; b. a silicon nitride layer formed over the oxide film, the silicon nitride layer characterized as being a continuously bonded material essentially free of trap sites and having a film stress being less than an associated film stress of a conventionally formed, stoichiometric silicon nitride film; and c. a polysilicon gate electrode disposed over the silicon nitride layer.
Claim 3
Dependent Claim
21 words
The semiconductor device as in claim 1 , wherein the silicon nitride layer has a thickness being less than 50 angstroms.
Claim 4
Dependent Claim
15 words
The semiconductor device as in claim 1 , wherein the semiconductor device comprises a transistor.
Claim 5
Dependent Claim
25 words
The semiconductor device as in claim 1 , further comprising a further oxide film disposed between said silicon nitride layer and said polysilicon gate electrode.
Claim 6
Dependent Claim
77 words
A semiconductor device comprising: a. an oxide film formed over a channel region within a semiconductor substrate; b. a silicon oxynitride layer formed directly over the oxide film, the silicon oxynitride layer characterized as being a continuously bonded material essentially free of trap sites and having a film stress being less than an associated film stress of a conventionally formed, stoichiometric silicon nitride film; and c. a polysilicon gate electrode disposed directly over the silicon oxynitride layer.
Claim 7
Dependent Claim
77 words
A semiconductor device comprising: a. an oxide film formed over a channel region within a semiconductor substrate; b. a silicon oxynitride layer formed directly over the oxide film, the silicon oxynitride layer characterized as being a continuously bonded material essentially free of trap sites and having a film stress being less than an associated film stress of a conventionally formed, stoichiometric silicon nitride film; and c. a polysilicon gate electrode disposed directly over the silicon oxynitride layer.
Claim 8
Dependent Claim
21 words
The semiconductor device as in claim 5 , wherein the silicon oxynitride layer has a thickness being less than 50 angstroms.
Claim 9
Dependent Claim
15 words
The semiconductor device as in claim 5 , wherein the semiconductor device comprises a transistor.
Claim 10
Dependent Claim
25 words
The semiconductor device as in claim 5 , further comprising a further oxide film disposed between said silicon oxynitride layer and said polysilicon gate electrode.
Claim 11
Dependent Claim
17 words
The semiconductor device as in claim 5 , wherein the silicon oxynitride layer includes silicon nitride therein.
References Cited (Backward Citations)
US6189138B1
Cited
US6218700B1
Cited
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