US6407453B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Kioxia Corp
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Filing: 2000-03-09
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Granted: 2002-06-18
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Expires: 2020-03-09
Abstract
Abstract Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating layer and a metallic wiring layer formed on the semiconductor substrate; and an intermediate layer formed between the insulating layer and the metallic wiring layer in contact with both the insulating layer and the metallic wiring layer, wherein the intermediate layer contains the metallic material forming the metallic wiring layer, Si and O.
Inventors
- 👤 Tadayoshi Watanabe
- 👤 Sachiyo Ito
- 👤 Takamasa Usui
- 👤 Hisashi Kaneko
- 👤 Masako Morita
- 👤 Hirokazu Ezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10D; H10D64/00; H10D64/01; H10D64/011; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/036; H10W20/037; H10W20/038; H10W20/056; H10W20/059; H10W20/064; H10W20/065; H10W20/081; H10W20/084; H10W20/40; H10W20/41; H10W20/44; H10W20/45; H10W20/48; H10W20/0375; H10W20/047; H10W20/049; H10W20/063
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
99 words
A semiconductor device, comprising: a semiconductor substrate having a surface; an insulating layer formed on the surface of said semiconductor substrate and having a groove portion for wiring; a wiring formed in said groove portion for wiring of said insulating layer, said wiring comprising grain boundaries in a cross section parallel to a longitudinal direction, and a via formed in said insulating layer and connected to said wiring, wherein said grain boundaries comprise at least one inclined grain boundary inclined with respect to the surface of said semiconductor substrate at an angle of inclination of not more than 60°.
Claim 2
Dependent Claim
99 words
A semiconductor device, comprising: a semiconductor substrate having a surface; an insulating layer formed on the surface of said semiconductor substrate and having a groove portion for wiring; a wiring formed in said groove portion for wiring of said insulating layer, said wiring comprising grain boundaries in a cross section parallel to a longitudinal direction, and a via formed in said insulating layer and connected to said wiring, wherein said grain boundaries comprise at least one inclined grain boundary inclined with respect to the surface of said semiconductor substrate at an angle of inclination of not more than 60°.
Claim 3
Dependent Claim
65 words
The semiconductor device according to claim 1 , further comprising a conductive layer formed in contact with at least three surfaces, said at least three surfaces comprising a bottom surface of said wiring, a first side surface of said wiring, and a second side surface of said wiring, said conductive layer comprising an element differing from the most prevalent element or elements constituting said wiring.
Claim 4
Dependent Claim
32 words
The semiconductor device according to claim 1 , wherein said wiring is an upper layer wiring, and said upper layer wiring is electrically connected to a lower layer wiring through the via.
Claim 5
Dependent Claim
56 words
The semiconductor device according to claim 1 , wherein said at least one inclined grain boundary inclined with respect to the surface of said semiconductor substrate at an angle of inclination of not more than 60° is formed in an amount of at least 20% of the total of said grain boundaries present in said wiring.
Claim 6
Dependent Claim
53 words
The semiconductor device according to claim 2 , wherein at least one inclined grain boundary inclined with respect to the surface of said semiconductor substrate at an angle of inclination of not more than 60° is present above said via or in a region not longer than 3 μm away from the via.
Claim 7
Dependent Claim
17 words
The semiconductor device according to claim 1 , wherein said wiring is formed by a damascene process.
Claim 8
Dependent Claim
53 words
The semiconductor device according to claim 1 , wherein said wiring comprises a first wiring portion formed by an LTS method and a second wiring portion formed by a reflow sputtering method on said first wiring portion, a thickness of said first wiring portion differing from a thickness of said second wiring portion.
Claim 9
Dependent Claim
38 words
The semiconductor device according to claim 1 , wherein said wiring comprises a wiring material, and a metal material layer arranged in said wiring, said metal material layer being formed of a metal differing from said wiring material.
Claim 10
Dependent Claim
60 words
The semiconductor device according to claim 8 , wherein said wiring material comprises a first material selected from the group consisting of W, Al, alloys of Al, Cu, and alloys of Cu, and said metal material layer is formed of a second material selected from the group consisting of Ti, TiN, Ta, TaN, TaAl, Nb, NbN, Ti/TiN, Nb/NbN/Nb, and Ta/TaN/Ta.
Claim 11
Dependent Claim
15 words
The semiconductor device according to claim 2 , wherein said via comprises tungsten or aluminum.
Claim 12
Dependent Claim
15 words
The semiconductor device according to claim 2 wherein said conductive layer is a metal layer.
Claim 13
Dependent Claim
16 words
The semiconductor device according to claim 2 , wherein said conductive layer is a compound layer.
Claim 14
Dependent Claim
17 words
The semiconductor device according to claim 6 , wherein said damascene process is a dual damascene process.
Claim 15
Dependent Claim
17 words
The semiconductor device according to claim 6 , wherein said damascene process is a single damascene process.
References Cited (Backward Citations)
US5952723A
Cited
JPH10150040A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-17 | 2005-12-17 | 2006-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-17 | 2009-12-17 | 2010-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-17 | 2013-12-17 | 2014-06-18 | $7700.00 | Window Closed / Lapsed |