Test interface circuit and semiconductor integrated circuit device including the same

Claim 2

A test interface circuit for externally testing a logic-merged memory comprising: a first-in first-out circuit for successively storing data read from said memory, and successively reading out stored data in a same order as a data storing order; a test writing circuit receiving externally applied data, for producing internal data to be written into said memory and transmitting the internal data to said memory; and a control circuit for controlling both data writing and reading of said first-in first-out circuit in response to an operation mode instruction signal instructing one of input and output of data.

Claim 3

The test interface circuit according to claim 1 , wherein said memory has a plurality of memory cells arranged in rows and columns, the memory cells in one page having a size of M bits are simultaneously selected by a row selecting operation performed one time, and input/output data of said memory has a bit width of m with m being an integer; and said first-in first-out circuit includes register circuits arranged in M/m stages.

Claim 4

The test interface circuit according to claim 1 , wherein said memory includes N banks to be driven to an active state independently of each other, each of said banks has a plurality of memory cells arranged in rows and columns, the memory cells in one page having a size of M bits are simultaneously selected by a row selecting operation performed one time, and data of a bit width of m is output with m being an integer; and said first-in first-out circuit includes register circuits arranged in N·M/m stages.

Claim 5

The test interface circuit according to claim 1 , wherein said control circuit includes: a first counter for counting a number of data reading from said memory in response to a data read instruction applied to said memory, and generating a write pointer indicating a position for writing data in said first-in first-out circuit in accordance with a count value when said operation mode instruction signal indicates a data input mode, and a second counter responsive to change of said operation mode instruction signal from data input mode instruction to data output mode instruction for generating a read pointer indicating a position of data to be read from said first-in first-out circuit according to a count value of said second counter, said read pointer and said write pointer initially indicating a same position.

Claim 6

The test interface circuit according to claim 1 , wherein the data from said first-in first-out circuit is transmitted to a pad via a bidirectional input/output circuit coupled to said pad, and a data transfer direction of said bidirectional input/output circuit is determined in response to said operation mode instruction signal.

Claim 7

The test interface circuit according to claim 4 , wherein said memory performs input and output of data in synchronization with a test clock signal, and said second counter performs a count operation in response to rising and falling of said test clock signal, to generate said read pointer.

Claim 8

A semiconductor integrated circuit device comprising: a logic for performing an arithmetic operation; a memory for storing at least data used for said arithmetic operation of said logic; and a test interface circuit for allowing a test through external and direct accessing to said memory, said test interface circuit including a first-in first-out circuit for successively storing data read from said memory, and successively reading out stored data in a same order as a data storing order, and a control circuit for controlling data writing and reading of said first-in first-out circuit in response to an operation mode instruction signal instructing one of input and output of data.

Claim 9

A semiconductor integrated circuit device comprising: a logic for performing an arithmetic operation; a memory for storing at least data used for said arithmetic operation of said logic; and a test interface circuit for allowing a test through external and direct accessing to said memory, said test interface circuit including a first-in first-out circuit for successively storing data read from said memory, and successively reading out stored data in a same order as a data storing order, and a control circuit for controlling data writing and reading of said first-in first-out circuit in response to an operation mode instruction signal instructing one of input and output of data.

Claim 10

The semiconductor integrated circuit device according to claim 7 , wherein said memory has a plurality of memory cells arranged in rows and columns, the memory cells in one page having a size of M bits are simultaneously selected by a row selecting operation performed one time, and input/output data of said memory has a bit width of m with m being an integer; and said first-in first-out circuit includes register circuits arranged in M/m stages.

Claim 11

The semiconductor integrated circuit device according to claim 7 , wherein said memory includes N banks to be driven to an active state independently of each other, each of the banks has a plurality of memory cells arranged in rows and columns, the memory cells in one page having a size of M bits are simultaneously selected by a row access performed one time, and data of a bit width of m is output externally; and said first-in first-out circuit includes register circuits arranged in N·M/m stages.

Claim 12

The semiconductor integrated circuit device according to claim 7 , wherein said control circuit includes: a first counter for counting a number of reading from said memory in response to a data read instruction applied to said memory, and generating a write pointer indicating a position for writing data in said first-in first-out circuit in accordance with a count value thereof when said operation mode instruction signal indicates a data input mode, and a second counter responsive to change of said operation mode instruction signal from data input mode instruction to data output mode instruction, for generating a read pointer indicating a position of data to be read from said first-in first-out circuit according to a count value of said second counter, said read pointer and said write pointer initially indicating a same position.

Claim 13

The semiconductor integrated circuit device according to claim 7 , further comprising: a bidirectional input/output circuit coupled between said first-in first-out circuit and a pad for outputting data read from said first-in first-out circuit to said pad, a data transfer path of said bidirectional input/output circuit being determined in response to said operation mode instruction signal.

Claim 14

The semiconductor integrated circuit device according to claim 10 , wherein said memory performs input and output of data in synchronization with a test clock signal, and said second counter performs the count operation in response to rising and falling of said test clock signal, to generate said read pointer.

Claim 15

The semiconductor integrated circuit device according to claim 7 , further comprising: a selector responsive to a test mode instruction signal for connecting said test interface circuit to said memory, and isolating said logic from said memory.

Claim 16

The semiconductor integrated circuit device according to claim 10 , wherein said second counter stops the count operation when the count value of said first counter matches the count value of said second counter.

Claim 17

The semiconductor integrated circuit device according to claim 12 , further comprising a frequency multiplier for generating a frequency-multiplied clock signal having a frequency double a frequency of the test clock signal.

Claim 18

The semiconductor integrated circuit device according to claim 7 , wherein said first-in first-out circuit includes registers arranged in a plurality of stages and a switch circuit for bypassing the registers.

Claim 19

The test interface circuit according to claim 1 , wherein said test writing circuit includes: a bit width extending circuit receiving said externally applied data for expanding a bit width of said externally applied data to generate said internal data for transmission to said memory.

Claim 20

The test interface circuit according to claim 1 , wherein said test writing circuit includes: first latch circuit for latching said externally applied data in response to a test clock signal, bit width expanding circuit for expanding data latched by said first latch circuit to generate said internal data, and a second latch circuit for latching said internal data received from said bit width expanding circuit for transmission to said memory in response to said test clock signal.

Claim 21

The test interface circuit according to claim 5 , wherein said test writing circuit is coupled to said bidirectional input/output circuit and said first-in first-out circuit, and said bidirectional input/out circuit transfers data with one of said test writing circuit and said first-in first-out circuit in accordance with said operation mode instructing signal.