US6403441B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating storage capacitor using high dielectric constant material
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1999-04-15
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Granted: 2002-06-11
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Expires: 2019-04-15
Abstract
Abstract A method for manufacturing a semiconductor device by laminating a plurality of ruthenium-type conductive electrodes and a dielectric film having a perovskite structure, includes forming a first conductive electrode at the semiconductor substrate, forming a first area where elements constituting the first conductive electrodes and elements constituting a first dielectric film are melded, forming a transitional layer by performing a heat treatment on the first meld area within a non-oxidizing atmosphere and forming the first dielectric film on the first conductive electrode. Accordingly, a transitional layer having a consistent composition can be formed with a high degree of efficiency at the interface of the ruthenium-type electrode and the dielectric substance having a perovskite structure, so that a capacitor structure employing a very thin dielectric film having a high dielectric constant can be produced with ease and at low cost.
Inventors
- 👤 Shinobu Takehiro
- 👤 Masaki Yoshimaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
91 words
A method for manufacturing a semiconductor device comprising: forming a first conductive electrode on a semiconductor substrate; forming a first dielectric film on the first conductive electrode by applying a high frequency voltage to the semiconductor substrate to achieve reverse sputtering, elements of the first dielectric film being melded with elements of the first conductive electrode in a first meld area at a surface of the first conductive electrode; and heat treating the first meld area to form a transitional layer between the first conductive electrode and the first dielectric film.
Claim 2
Independent Claim
91 words
A method for manufacturing a semiconductor device comprising: forming a first conductive electrode on a semiconductor substrate; forming a first dielectric film on the first conductive electrode by applying a high frequency voltage to the semiconductor substrate to achieve reverse sputtering, elements of the first dielectric film being melded with elements of the first conductive electrode in a first meld area at a surface of the first conductive electrode; and heat treating the first meld area to form a transitional layer between the first conductive electrode and the first dielectric film.
Claim 3
Dependent Claim
119 words
The method for manufacturing a semiconductor device according to claim 1 , further comprising: forming a second dielectric film on the first dielectric film; forming an initial second conductive electrode on the second dielectric film by applying a high frequency voltage to the semiconductor substrate to achieve reverse sputtering, elements of the second dielectric film being melded with elements of the initial second conductive electrode at a second meld area at a surface of the initial second conductive electrode; forming an additional second conductive electrode on the initial second conductive electrode; and heat treating the second meld area within a non-oxidizing atmosphere to form a second transitional layer between the second dielectric film and the additional second conductive electrode.
Claim 4
Dependent Claim
21 words
The method for manufacturing a semiconductor device according to claim 1 , wherein the first dielectric film is a perovskite structure.
Claim 5
Dependent Claim
82 words
The method for manufacturing a semiconductor device according to claim 1 , further comprising: forming a second dielectric film on the first dielectric film; implanting ions into the second dielectric film, to meld the ions into the second dielectric film to form a second meld area; forming a second conductive electrode on the second dielectric film after said implanting; and heat treating the second conductive electrode to form a second transitional layer between the second dielectric film and the second conductive electrode.
Claim 6
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 4 , wherein the ions are the same as an element of the second conductive electrode.
Claim 7
Dependent Claim
48 words
The method for manufacturing a semiconductor device of claim 1 , the first conductive electrode being selected from a group of precious metals having high melting points including platinum, iridium and ruthenium, and the first dielectric film including barium, strontium and titanium and having a high dielectric constant.
Claim 8
Dependent Claim
25 words
The method for manufacturing a semiconductor device according to claim 1 , wherein said forming a first dielectric film is implemented within an oxidizing atmosphere.
Claim 9
Dependent Claim
31 words
The method for manufacturing a semiconductor device according to claim 1 , further comprising forming a first conductive oxide film on the first conductive electrode before forming a first dielectric film.
Claim 10
Dependent Claim
31 words
The method for manufacturing a semiconductor device according to claim 1 , wherein said heat treating is implemented within a non-oxidizing atmosphere at a temperature within a range of 300°-700° C.
Claim 11
Dependent Claim
30 words
The method for manufacturing a semiconductor device according to claim 1 , wherein said heat treating is implemented at a temperature of 500° C. or less within an oxidizing atmosphere.
Claim 12
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 2 , wherein said forming an initial second conductive electrode is implemented within an oxidizing atmosphere.
Claim 13
Independent Claim
106 words
A method for manufacturing a semiconductor device comprising: forming a conductive electrode on a semiconductor substrate; implanting ions into the conductive electrode, the ions being melded with elements of the conductive electrode in a meld area at a surface of the conductive electrode; forming a dielectric layer on the conductive electrode after said implanting; and heat treating the dielectric layer to form a transitional layer between the dielectric layer and the conductive electrode, the ions being selected from a group of elements that comprise the dielectric layer, and said heat treating being implemented within a non-oxidizing atmosphere at a temperature within a range of 300-700° C.
Claim 14
Independent Claim
106 words
A method for manufacturing a semiconductor device comprising: forming a conductive electrode on a semiconductor substrate; implanting ions into the conductive electrode, the ions being melded with elements of the conductive electrode in a meld area at a surface of the conductive electrode; forming a dielectric layer on the conductive electrode after said implanting; and heat treating the dielectric layer to form a transitional layer between the dielectric layer and the conductive electrode, the ions being selected from a group of elements that comprise the dielectric layer, and said heat treating being implemented within a non-oxidizing atmosphere at a temperature within a range of 300-700° C.
Claim 15
Independent Claim
105 words
A method for manufacturing a semiconductor device comprising: forming a conductive electrode on a semiconductor substrate; implanting ions into the conductive electrode, the ions being melded with elements of the conductive electrode in a meld area at a surface of the conductive electrode; forming a dielectric layer on the conductive electrode after said implanting; and heat treating the dielectric layer to form a transitional layer between the dielectric layer and the conductive electrode, the ions being selected from a group of elements that comprise the dielectric layer, and said heat treating being implemented within an oxidizing atmosphere at a temperature of 500° C. or lower.
Claim 16
Independent Claim
105 words
A method for manufacturing a semiconductor device comprising: forming a conductive electrode on a semiconductor substrate; implanting ions into the conductive electrode, the ions being melded with elements of the conductive electrode in a meld area at a surface of the conductive electrode; forming a dielectric layer on the conductive electrode after said implanting; and heat treating the dielectric layer to form a transitional layer between the dielectric layer and the conductive electrode, the ions being selected from a group of elements that comprise the dielectric layer, and said heat treating being implemented within an oxidizing atmosphere at a temperature of 500° C. or lower.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-06-10 | 2005-12-10 | 2006-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-10 | 2013-12-10 | 2014-06-11 | $7700.00 | Window Closed / Lapsed |