Optical disk

Claim 2

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film in which an optical aperture is formed in a region irradiated with light with a long wavelength, the optical aperture being narrower than a spot size of the long-wavelength light, at least a part of the super-resolution film transmitting the short-wavelength light; and a recording layer.

Claim 3

The optical disk according to claim 1 , wherein the transmittance of said super-resolution film increase due to irradiation of light with a long wavelength and irradiation of light with a short wavelength respectively.

Claim 4

The optical disk according to claim 2 , wherein said super-resolution film comprises a dielectric film and two kinds of semiconductor particles dispersed in the dielectric film.

Claim 5

The optical disk according to claim 3 , wherein one of the semiconductor is selected from the group consisting of CdSe, CdTe, AlSb, and GaAs, and the other is selected from the group consisting of ZnSe, ZnTe, CdS, AlP, AlAs, GaP, and SiC.

Claim 6

The optical disk according to claim 1 , wherein said super-resolution film has a stacked structure comprising a first super-resolution film whose transmittance increase due to irradiation of light with a long wavelength and a second super-resolution film whose transmittance changes due to irradiation of light with a short wavelength.

Claim 7

The optical disk according to claim 5 , wherein semiconductors included in said first and second super-resolution films are different from each other.

Claim 8

The optical disk according to claim 5 , wherein said super-resolution film whose transmittance increase due to irradiation of light with a long wavelength has a structure in which semiconductor particles selected from the group consisting of CdSe, CdTe, AlSb, and GaAs are dispersed in a dielectric film, and wherein said super-resolution film whose transmittance increase due to irradiation of light with a short wavelength has a structure in which semiconductor particles selected from the group consisting of ZnSe, ZnTe, CdS, AlP, AlAs, GaP, and SiC are dispersed in a dielectric film.

Claim 9

The optical disk according to claim 1 , wherein a track pitch of tracks formed on said disk substrate is not more than 0.5 μm.

Claim 10

The optical disk according to claim 1 , wherein said super-resolution film causes increase in transmittance because of an absorption saturation phenomenon.

Claim 11

The optical disk according to claim 1 , wherein said super-resolution film comprises a dielectric film and semiconductor particles dispersed in the dielectric film.

Claim 12

The optical disk according to claim 10 , wherein said semiconductor is selected from the group consisting of CdSe, CdTe, AlSb, and GaAs.

Claim 13

The optical disk according to claim 1 , wherein said super-resolution film comprises an organic dielectric film and organic dye molecules dispersed in the organic dielectric film.

Claim 14

The optical disk according to claim 12 , wherein said organic dye is a super saturation absorption dye selected from the group consisting of phthalocyanine and 3-diethylthiadicarbocyanine iodide.

Claim 15

The optical disk according to claim 1 , wherein said super-resolution film comprises a chalcogen-based phase change material.

Claim 16

The optical disk according to claim 1 , wherein said optical disk has a structure in which a super-resolution film, a first interference film, a phase change optical recording layer, a second interference layer, and a reflective layer are formed on a substrate.

Claim 17

The optical disk according to claim 1 , wherein information recorded by irradiating light with a short wavelength can be reproduced by irradiating light with a long wavelength.

Claim 18

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film comprising a dielectric film and semiconductor particles dispersed in the dielectric film, an optical aperture being formed in a region of the super-resolution film irradiated with light with a long wavelength, the optical aperture being narrower than a spot size of the long-wavelength light, the super-resolution film transmitting the short-wavelength light; and a recording layer.

Claim 19

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film comprising a dielectric film and semiconductor particles dispersed in the dielectric film, an optical aperture being formed in a region of the super-resolution film irradiated with light with a long wavelength, the optical aperture being narrower than a spot size of the long-wavelength light, the super-resolution film transmitting the short-wavelength light; and a recording layer.

Claim 20

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film of a stacked structure comprising a first super-resolution film having a structure that first semiconductor particles are dispersed in a first dielectric film and a second super-resolution film having a structure that second semiconductor particles are dispersed in a second dielectric film, in which a first optical aperture is formed in a region of the first super-resolution film irradiated with light with a long wavelength, the first optical aperture being narrower than a spot size of the long-wavelength light, the first super-resolution film transmitting the short-wavelength light, and in which a second optical aperture is formed in a region of the second super-resolution film irradiated with the short-wavelength light, the second optical aperture being narrower than a spot size of the short-wavelength light; and a recording layer.

Claim 21

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film of a stacked structure comprising a first super-resolution film having a structure that first semiconductor particles are dispersed in a first dielectric film and a second super-resolution film having a structure that second semiconductor particles are dispersed in a second dielectric film, in which a first optical aperture is formed in a region of the first super-resolution film irradiated with light with a long wavelength, the first optical aperture being narrower than a spot size of the long-wavelength light, the first super-resolution film transmitting the short-wavelength light, and in which a second optical aperture is formed in a region of the second super-resolution film irradiated with the short-wavelength light, the second optical aperture being narrower than a spot size of the short-wavelength light; and a recording layer.

Claim 22

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film having a structure that first semiconductor particles and second semiconductor particles are dispersed in a dielectric film, the first semiconductor particles causing absorption saturation phenomenon due to irradiation with light with a long wavelength and transmitting the short-wavelength light, the second semiconductor particles causing absorption saturation phenomenon due to irradiation with the short-wavelength light; and a recording layer.

Claim 23

An optical disk that operates with two or more different wavelengths, comprising: a disk substrate on which tracks are formed at a track pitch corresponding to light with a short wavelength; a super-resolution film having a structure that first semiconductor particles and second semiconductor particles are dispersed in a dielectric film, the first semiconductor particles causing absorption saturation phenomenon due to irradiation with light with a long wavelength and transmitting the short-wavelength light, the second semiconductor particles causing absorption saturation phenomenon due to irradiation with the short-wavelength light; and a recording layer.