US6353263B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: III Holdings 10 LLC
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Filing: 2000-03-02
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Granted: 2002-03-05
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Expires: 2020-03-02
Abstract
Abstract When a first semiconductor chip is installed on a circuit substrate by using an anisotropic conductive bonding agent, one portion thereof is allowed to protrude outside the first semiconductor chip. A second semiconductor chip is installed on the first semiconductor chip and a support portion formed by the protruding resin. The protruding portion of the second semiconductor chip is supported by the support portion from under. Thus, in a semiconductor device having a plurality of laminated semiconductor chips in an attempt to achieve a high density, even when, from a semiconductor chip stacked on a circuit substrate, one portion of a semiconductor chip stacked thereon protrudes, it is possible to carry out a better wire bonding process on electrodes formed on the protruding portion.
Inventors
- 👤 Yoshihisa Dotta
- 👤 Yasuyuki Saza
- 👤 Kazuo Tamaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/0711; H10W74/00; H10W74/01; H10W74/012; H10W74/014; H10W74/10; H10W74/111; H10W74/114; H10W74/15; H10W90/00; H10W72/01; H10W72/0198; H10W72/072; H10W72/073; H10W72/075; H10W72/20; H10W72/241; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/851; H10W72/853; H10W72/856; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W74/131; H10W74/142; H10W90/20; H10W90/291; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/732; H10W90/734; H10W90/736; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
87 words
A semiconductor device comprising: a first semiconductor chip connected to a circuit substrate by using a bonding agent with an active face thereof facing the circuit substrate; a second semiconductor chip having a protruding portion sticking out from the first semiconductor chip with a back face thereof being bonded to a back face of the first semiconductor chip, the protruding portion being connected to the circuit substrate with a wire; and a support portion, formed by one portion of the bonding agent, for supporting the protruding portion.
Claim 2
Dependent Claim
87 words
A semiconductor device comprising: a first semiconductor chip connected to a circuit substrate by using a bonding agent with an active face thereof facing the circuit substrate; a second semiconductor chip having a protruding portion sticking out from the first semiconductor chip with a back face thereof being bonded to a back face of the first semiconductor chip, the protruding portion being connected to the circuit substrate with a wire; and a support portion, formed by one portion of the bonding agent, for supporting the protruding portion.
Claim 3
Dependent Claim
21 words
The semiconductor device as defined in claim 1 , wherein an anisotropic conductive bonding agent is used as said bonding agent.
Claim 4
Dependent Claim
97 words
A semiconductor device comprising: a first semiconductor chip that is flip-chip bonded to a circuit substrate with a second semiconductor chip being bonded to a back face of the first semiconductor chip, the second semiconductor chip being bonded to the circuit substrate by means of wire-bonding, wherein: at least one side of outer edges of the second semiconductor chip protrudes from an outer edge of the first semiconductor chip, and a portion under a protruding portion of the second semiconductor chip is filled with a bonding agent that bonds the first semiconductor chip and the circuit substrate.
Claim 5
Dependent Claim
97 words
A semiconductor device comprising: a first semiconductor chip that is flip-chip bonded to a circuit substrate with a second semiconductor chip being bonded to a back face of the first semiconductor chip, the second semiconductor chip being bonded to the circuit substrate by means of wire-bonding, wherein: at least one side of outer edges of the second semiconductor chip protrudes from an outer edge of the first semiconductor chip, and a portion under a protruding portion of the second semiconductor chip is filled with a bonding agent that bonds the first semiconductor chip and the circuit substrate.
Claim 6
Dependent Claim
25 words
The manufacturing method of a semiconductor device as defined in claim 3 , wherein an anisotropic conductive bonding agent is used as said bonding agent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-03-04 | 2005-09-03 | 2006-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-03-04 | 2009-09-03 | 2010-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-03-04 | 2013-09-03 | 2014-03-05 | $7700.00 | Window Closed / Lapsed |