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US6323931B1 Expired / Lapsed US ⏱️ 0.0 years remaining

LCD with external circuit having anti-short-circuit pattern and particular structure

Assignee: Vista Peak Ventures LLC
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Filing: 2000-09-27
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Granted: 2001-11-27
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Expires: 2020-09-27
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Abstract

Abstract An interterminal anti-short-circuiting pattern is formed in an upper metal wire included in a connection terminal 3 , for connecting to external driving LSI and the like, located on the projected portion of a bottom glass substrate 2 . This pattern includes recess 4 and island 5 on which a contact hole 12 a is formed through a protective insulating film. The protective insulating film has high residence to water penetration. Spread of the corrosion can be shut off by the recess surrounding the island. Short circuit occurrence due to interterminal current leak can be inhibited under high moisture conditions in the semiconductor device used for active matrix display, e.g. LCD panel.

Inventors

  • 👤 Akira Fujita
  • 👤 Choei Sugitani

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 00:52
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13458; G02F1/13452; G02F1/136; G02F1/1362; G02F1/136204; G02F1/1368; H; H10; H10D; H10D86/00; H10D86/40; H10D86/441; H10W; H10W70/00; H10W70/60; H10W70/611

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 163 words
A semiconductor device, comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode: wherein each of said metal wires at the position of said connection terminal is provided with an interterminal anti-short-circuiting pattern comprising conductive island and recess(es) located around said island; wherein the surface of said metal wire except at least a portion of said island but including the inside of said recess(es) thereon are covered with a protective insulating film; wherein a contact hole is formed of the uncovered portion with said protective insulating film on said island; wherein a bottomed pool arriving at said recess is provided through said protective insulating film adjacent to said contact hole; and wherein a transparent conductive film is deposited on the surface of said protective insulating film, including inside of said contact hole and said bottomed pool.
Claim 2
Dependent Claim 163 words
A semiconductor device, comprising plural lines of metal wires formed on a substrate each having a connection terminal positioned at the end of said substrate for connecting to an external driving circuit for applying voltage independently to every pixel electrode: wherein each of said metal wires at the position of said connection terminal is provided with an interterminal anti-short-circuiting pattern comprising conductive island and recess(es) located around said island; wherein the surface of said metal wire except at least a portion of said island but including the inside of said recess(es) thereon are covered with a protective insulating film; wherein a contact hole is formed of the uncovered portion with said protective insulating film on said island; wherein a bottomed pool arriving at said recess is provided through said protective insulating film adjacent to said contact hole; and wherein a transparent conductive film is deposited on the surface of said protective insulating film, including inside of said contact hole and said bottomed pool.
Claim 3
Dependent Claim 50 words
The semiconductor device as defined in claim 1 , wherein said recess and said bottomed pool are enough to intercept the propagation of corrosion originating from said island mounted on said metal wire located at the position of said terminal so as not to spread corrosion out of said island.
Claim 4
Dependent Claim 100 words
The semiconductor device as defined in claim 1 , which is an active matrix liquid crystal display panel comprising matrix electrodes, plural pixel electrodes and active switching elements corresponding one by one to said pixel electrodes, all of which being connected to each of said metal electrodes except said connection terminal end and constituting a display portion on said substrate, wherein said pixel electrode can be switched correspondingly to the matrix operation of said active switching elements, and liquid crystal is put into the space of the electrode area of between said substrate and another substrate bonded opposing each other.
Claim 5
Dependent Claim 18 words
The semiconductor device as defined in claim 3 , wherein said active switching elements are thin film transistors.

References Cited (Backward Citations)

US5534728A Cited
JPH05203988A Cited
JPH086059A Cited
US6128050A Cited
US5828433A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-11-26 2005-05-28 2005-11-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-11-26 2009-05-28 2009-11-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-11-26 2013-05-28 2013-11-27 $7700.00 Window Closed / Lapsed

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