Semiconductor storage device capable of improving controllability of density and size of floating gate

Claim 2

A semiconductor storage device comprising: a source region and a drain region formed of semiconductor material; a channel region located between the source region and the drain region; a control gate region that is formed above the channel region and controls a channel current flowing through the channel region; and a first insulating film, a floating gate region and a second insulating film that are arranged in order from the control gate region side between the channel region and the control gate region, wherein the floating gate region is comprised of a plurality of granular regions discretely linearly arranged in an elongated manner substantially parallel to a surface of the channel region; and the floating gate region comprises the plurality of granular regions and a size D of the granular regions in the floating gate region satisfies the conditions: q 2 /(4πε i D )> kT, and ε i= (ε 1 +ε 2 )/2 where q is an electron charge, ε 1 is a dielectric constant of the first insulating film, ε 2 is a dielectric constant of the second insulating film, k is Boltzmann constant and T is a temperature of the semiconductor storage device.

Claim 3

A semiconductor storage device comprising: a source region and a drain region formed of semiconductor material; a channel region located between the source region and the drain region; a control gate region formed above the channel region for controlling a channel current flowing through the channel region; a first insulating film, a floating gate region and a second insulating film between the channel region and the control gate region; wherein the floating gate region comprises a linear region which is continuously formed substantially parallel to the surface of the channel region; wherein the floating gate region is the linear region, and the floating gate region is comprised of a polycrystal semiconductor; wherein a crystal grain size A in a lengthwise direction and a cross-sectional area S of the linear region of the floating gate region satisfy the conditions: q 2 /(2 C )> kT, C= 2πε i A /log ({( A /2+( A 2 /4+ S 2 /4) {fraction (1/2+L )})}/( S /2)) and ε i= (ε 1 +ε 2 )/2 where q is the electron charge, ε 1 is a dielectric constant of the first insulating film, ε 2 is a dielectric constant of the second insulating film, k is Boltzmann constant and T is a temperature of the semiconductor device.

Claim 4

A semiconductor storage device comprising: a source region and a drain region formed of semiconductor material; a channel region located between the source region and the drain region; a control gate region formed above the channel region for controlling a channel current flowing through the channel region; a first insulating film, a floating gate region and a second insulating film between the channel region and the control gate region; wherein the floating gate region comprises a linear region which is continuously formed substantially parallel to the surface of the channel region; wherein the floating gate region is the linear region, and the floating gate region is comprised of a polycrystal semiconductor; wherein a crystal grain size A in a lengthwise direction and a cross-sectional area S of the linear region of the floating gate region satisfy the conditions: q 2 /(2 C )> kT, C= 2πε i A /log ({( A /2+( A 2 /4+ S 2 /4) {fraction (1/2+L )})}/( S /2)) and ε i= (ε 1 +ε 2 )/2 where q is the electron charge, ε 1 is a dielectric constant of the first insulating film, ε 2 is a dielectric constant of the second insulating film, k is Boltzmann constant and T is a temperature of the semiconductor device.

Claim 5

A semiconductor storage device comprising: a source region and a drain region formed of semiconductor material; a channel region located between the source region and the drain region; a control gate region formed above the channel region for controlling a channel current flowing through the channel region; a first insulating film, a floating gate region and a second insulating film between the channel region and the control gate region; wherein the floating gate region comprises a linear region which is continuously formed substantially parallel to the surface of the channel region; wherein the floating gate region is the linear region, and the floating gate region is comprised of a polycrystal semiconductor; wherein a number N of crystal grains in the linear region and a size A of the crystal grain in the lengthwise direction of the linear region satisfy the conditions: q ( n/LWε i )( t 1 +(ε i /ε 1 ) A/ 2)> kT/q and ε i =(ε 1 +ε 2 )/2 where q is an electron charge, L is a length of the channel region, w is a width of the channel region, ε 1 is a dielectric constant of the first insulating film, ε 2 is a dielectric constant of the second insulating film, k is Boltzmann constant, T is a temperature of the semiconductor device, and t 1 is a film thickness of the first insulating film.

Claim 6

A semiconductor storage device comprising: a source region and a drain region formed of semiconductor material; a channel region located between the source region and the drain region; a control gate region formed above the channel region for controlling a channel current flowing through the channel region; a first insulating film, a floating gate region and a second insulating film between the channel region and the control gate region; wherein the floating gate region comprises a linear region which is continuously formed substantially parallel to the surface of the channel region; wherein the floating gate region is the linear region, and the floating gate region is comprised of a polycrystal semiconductor; wherein a number N of crystal grains in the linear region and a size A of the crystal grain in the lengthwise direction of the linear region satisfy the conditions: q ( n/LWε i )( t 1 +(ε i /ε 1 ) A/ 2)> kT/q and ε i =(ε 1 +ε 2 )/2 where q is an electron charge, L is a length of the channel region, w is a width of the channel region, ε 1 is a dielectric constant of the first insulating film, ε 2 is a dielectric constant of the second insulating film, k is Boltzmann constant, T is a temperature of the semiconductor device, and t 1 is a film thickness of the first insulating film.

Claim 7

A semiconductor storage device as claimed in claim 1 , wherein the floating gate region is made of one metal selected from the group consisting of tungsten, molybdenum, cobalt, nickel, platinum, rhodium, palladium and iridium or a mixture or alloy of at least two metals selected from the group consisting of tungsten, molybdenum, cobalt, nickel, platinum, rhodium, palladium and iridium.

Claim 8

A semiconductor storage device as claimed in claim 1 , wherein the floating gate region is made of one semiconductor material selected from the group consisting of silicon, germanium, a mixture of silicon and germanium, a compound of the groups III and V or a compound of the groups II and VI.

Claim 9

The semiconductor storage device of claim 1 , wherein the semiconductor storage device comprises a MOS transistor having the floating gate region located between the control gate region and the channel region, wherein the floating gate region comprises a plurality of nano-crystals which are discretely linearly arranged in a one dimensional manner substantially parallel to a surface of the channel region.

Claim 10

The semiconductor storage device of claim 2 , wherein the semiconductor storage device comprises a MOS transistor including the floating gate region located at least partially between the control gate region and the channel region, and wherein the floating gate region comprises a plurality of nano-crystals which are continuously linearly arranged in a one dimensional manner substantially parallel to a surface of a channel region.

Claim 11

The semiconductor storage device of claim 3 , wherein the semiconductor storage device comprises a MOS transistor including the floating gate region located at least partially between the control gate region and the channel region, and wherein the floating gate region comprises a plurality of nano-crystals which are continuously linearly arranged in a one dimensional manner substantially parallel to a surface of a channel region.