US6252218B1
Expired / Lapsed
US
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Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout
Assignee: Aptina Imaging Corp
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Filing: 1999-02-02
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Granted: 2001-06-26
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Expires: 2019-02-02
Abstract
Abstract An active pixel sensor having an amorphous silicon sensing layer and a semiconductor readout layer. A plurality of P-I-N photodiodes are disposed in the sensing layer. The photodiodes define subpixels that are arranged in a hexagonal grid layout. The subpixels can have a hexagonal shape or a circular shape. The sensing layer can include color filters for implementing a color pattern, an infrared filter to absorb infrared radiation, and a microlens for focusing an image on the subpixels. The subpixels can be arranged in a triangular configuration to form a pixel and adjacent pixels can be arranged in the hexagonal grid layout. The readout layer includes a plurality of readout rectangular readout cells that correspond to the subpixels in the sensing layer. The readout cells can be arranged in a triangular configuration to match the subpixels in the sensing layer. The P-I-N photodiodes have an output for generating an output signal that is communicated to the readout cells in the readout layer.
Inventors
- 👤 Eric Ying-Chin Chou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 02:34
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/80; H10F39/802; H04; H04N; H04N25/00; H04N25/10; H04N25/11; H04N25/13; H04N25/134; H10F39/10; H10F39/12; H10F39/18; H10F39/805; H10F39/8053; H10F39/8057; H10F39/806; H10F39/8063
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
216 words
An image sensor, comprising: a semiconductor substrate defining a readout layer, the readout layer having a plurality of readout cells formed therein, each of the readout cells having a signal input, the readout cells disposed in rows, each row having readout cells offset in position with respect to the readout cells in an adjacent row; a dielectric material formed on the readout layer defining a sensing layer, the sensing layer having a plurality of cavities formed therein, a portion of each of the cavities having an opening in communication with the signal input of one of the readout cells, the cavities arranged in a hexagonal grid layout and positioned in opposing relation to the readout cells; an intrinsic amorphous silicon P-I-N photodiode formed in each cavity and operative to generate an output signal indicative of light incident on that P-I-N photodiode; an interconnect disposed in the opening of each cavity, the interconnect operative to electrically communicate the output signal from the P-I-N photodiode to the signal input of the readout cell; and a biased optically transparent electrode disposed on the P-I-N photodiode, the electrode operative to bias the P-I-N photodiode and to allow light incident on the electrode to be imaged onto the P-I-N photodiode, the P-I-N photodiode and the transparent electrode together defining a subpixel.
Claim 2
Dependent Claim
216 words
An image sensor, comprising: a semiconductor substrate defining a readout layer, the readout layer having a plurality of readout cells formed therein, each of the readout cells having a signal input, the readout cells disposed in rows, each row having readout cells offset in position with respect to the readout cells in an adjacent row; a dielectric material formed on the readout layer defining a sensing layer, the sensing layer having a plurality of cavities formed therein, a portion of each of the cavities having an opening in communication with the signal input of one of the readout cells, the cavities arranged in a hexagonal grid layout and positioned in opposing relation to the readout cells; an intrinsic amorphous silicon P-I-N photodiode formed in each cavity and operative to generate an output signal indicative of light incident on that P-I-N photodiode; an interconnect disposed in the opening of each cavity, the interconnect operative to electrically communicate the output signal from the P-I-N photodiode to the signal input of the readout cell; and a biased optically transparent electrode disposed on the P-I-N photodiode, the electrode operative to bias the P-I-N photodiode and to allow light incident on the electrode to be imaged onto the P-I-N photodiode, the P-I-N photodiode and the transparent electrode together defining a subpixel.
Claim 3
Dependent Claim
15 words
The sensor of claim 1 , wherein the shape of the subpixels is substantially hexagonal.
Claim 4
Dependent Claim
16 words
The sensor of claim 2 , wherein the shape of the subpixels is an equilateral hexagon.
Claim 5
Dependent Claim
15 words
The sensor of claim 1 , wherein the shape of the subpixels is substantially circular.
Claim 6
Dependent Claim
31 words
The sensor of claim 1 , wherein each subpixel includes an opaque optical shield layer operative to prevent the light incident on the P-I-N photodiode from impinging on the readout layer.
Claim 7
Dependent Claim
19 words
The sensor of claim 1 , wherein three subpixels are arranged in a triangular configuration to define a pixel.
Claim 8
Dependent Claim
29 words
The sensor of claim 6 , wherein three readout cells correspond to the three subpixels in the pixel and the three readout cells are arranged in the triangular configuration.
Claim 9
Dependent Claim
38 words
The sensor of claim 1 , further comprising an amplifier disposed in each readout cell in electrical communication with the signal input and having an amp output at which an amplified version of the output signal is provided.
Claim 10
Dependent Claim
58 words
The sensor of claim 8 , wherein the amplifier further comprises: a select input operative to enable the amp output whereby the amplified output signal communicates with the amp output when the select input is enabled; a terminal in communication with a reset voltage; and a reset input operative to set the amp output to the reset voltage.
Claim 11
Dependent Claim
68 words
The sensor of claim 9 , wherein the readout layer further comprises: a serpentine bus formed on the readout layer, the serpentine bus intersecting the rows of the readout layer; and a stair-step bus formed on the readout layer, the stair-step bus intersecting the rows of the readout layer, the serpentine bus and the stair-step bus operative to communicate signals between the readout cells and the readout layer.
Claim 12
Dependent Claim
106 words
The sensor of claim 10 , wherein the rows of the readout layer further comprise: an A-type interconnect pattern formed on the readout cells of a first row; and a B-type interconnect pattern formed on the readout cells of a second row adjacent to the first row, the A-type interconnect pattern having a C-shaped interconnect and a first L-shaped interconnect, the B-type interconnect pattern having a second L-shaped interconnect and a third L-shaped interconnect, the C-shaped interconnect in electrical communication with the second L-shaped interconnect defining the serpentine bus, and the first L-shaped interconnect in electrical communication with the third L-shaped interconnect defining the stair-step bus.
Claim 13
Dependent Claim
30 words
The sensor of claim 11 , wherein the serpentine bus is in electrical communication with the amp output and the stair-step bus is in electrical communication with the reset voltage.
Claim 14
Dependent Claim
38 words
The sensor of claim 1 , wherein the sensing layer further comprises an infrared filter positioned adjacent to the electrode, the infrared filter operative to attenuate the absorption of infrared noise from the light incident on the subpixel.
Claim 15
Dependent Claim
29 words
The sensor of claim 1 , wherein the sensing layer further comprises a microlens disposed adjacent to the subpixel, the microlens operative to focus incident light onto the subpixel.
Claim 16
Dependent Claim
38 words
The sensor of claim 1 , wherein the sensing layer further comprises a filter layer positioned adjacent to the electrode, the filter layer operative to pass a selected wavelength of light from the light incident on the subpixel.
Claim 17
Dependent Claim
18 words
The sensor of claim 15 , wherein the filter layer is a color filter having a predetermined color.
Claim 18
Dependent Claim
32 words
The sensor of claim 16 , wherein three subpixels define a pixel and the color of the color filter is the same for at least two of the subpixels in the pixel.
Claim 19
Dependent Claim
30 words
The sensor of claim 16 , wherein the wavelength of the color filter for any given subpixel is different from the wavelength of the color filter of any adjacent subpixel.
Claim 20
Dependent Claim
27 words
The sensor of claim 16 , wherein the color of the color filter is selected from the group consisting of red, green, blue, cyan, magenta, and yellow.
Claim 21
Dependent Claim
41 words
The sensor of claim 16 , wherein the colors of the color filters for adjacent subpixels define an equal distribution RGB color pattern and the colors of the color filters are selected from the group consisting of red, green, and blue.
Claim 22
Dependent Claim
30 words
The sensor of claim 20 , wherein the wavelength of the color filter for any given subpixel is different from the wavelength of the color filter of any adjacent subpixel.
Claim 23
Dependent Claim
33 words
The sensor of claim 20 , wherein the subpixels are positioned so that a lineal image traversal through adjacent subpixels results in a sequential crossing of the subpixels having the RGB color pattern.
Claim 24
Dependent Claim
41 words
The sensor of claim 16 , wherein the colors of the color filters for adjacent subpixels define an equal distribution CMY color pattern and the colors of the color filters are selected from the group consisting of cyan, magenta, and yellow.
Claim 25
Dependent Claim
30 words
The sensor of claim 23 , wherein the wavelength of the color filter for any given subpixel is different from the wavelength of the color filter of any adjacent subpixel.
Claim 26
Dependent Claim
33 words
The sensor of claim 23 , wherein the subpixels are positioned so that a lineal image traversal through adjacent subpixels results in a sequential crossing of the subpixels having the CMY color pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-25 | 2004-12-25 | 2005-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-25 | 2008-12-25 | 2009-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-25 | 2012-12-25 | 2013-06-26 | $7700.00 | Window Closed / Lapsed |