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US6231989B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming coatings

Assignee: Dow Silicones Corp
•
Filing: 1998-11-20
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Granted: 2001-05-15
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Expires: 2018-11-20
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Abstract

Abstract A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si-H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si-H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.

Inventors

  • 👤 Kyuha Chung
  • 👤 Eric Scott Moyer
  • 👤 Michael John Spaulding

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 00:31
CPC Classifications
B; B32; B32B; B32B27/00; C; C04; C04B; C04B41/00; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6546; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926; Y10T428/31504; Y10T428/31652; Y10T428/31663

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 91 words
A method of forming a coating on a substrate comprising: depositing a coating on a substrate with a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition; exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause hydrolysis of the Si—H groups and at least partial condensation; and evaporating the solvent from the coating to form a porous network coating.
Claim 2
Independent Claim 91 words
A method of forming a coating on a substrate comprising: depositing a coating on a substrate with a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition; exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause hydrolysis of the Si—H groups and at least partial condensation; and evaporating the solvent from the coating to form a porous network coating.
Claim 3
Dependent Claim 23 words
The method of claim 1 wherein the porous network coating is heated to a temperature sufficient to convert the coating to a ceramic.
Claim 4
Dependent Claim 80 words
The method of claim 1 wherein the resin containing at least 2 Si—H groups has the formula: {R 3 SiO 1/2 } a {R 2 SiO 2/2 } b {RSiO 3/2 } c {SiO 4/2 } d wherein each R is independently selected from the group consisting of hydrogen, alkyl, alkenyl, and aryl groups or alkyl, alkenyl, and aryl groups substituted with halogen, nitrogen, oxygen sulfur or silicon atoms, with the proviso that at least 2 R groups are hydrogen.
Claim 5
Dependent Claim 103 words
The method of claim 3 wherein the resin comprises hydrogen silsesquioxane resin of the structure selected from the group consisting of (HSiO 3/2 ) n , a polymer having units of the formula HSi(OH) a O 3-x/2 and a polymer having units of the formula HSi(OH) x (OR) y O z/2 , wherein each R is independently an organic group which, when bonded to silicon through the oxygen atom, forms a hydrolyzable substituent, a=0-2, x=0-2, y=0-2, z=1-3, x+y+z=3, n is an integer greater than 3 and the average value of y over all of the units of the polymer is greater than 0.
Claim 6
Dependent Claim 47 words
The method of claim 1 wherein the solvent is selected from the group consisting of alcohols, aromatic hydrocarbons, alkanes, alkenes, ketones, esters, ethers or mixtures thereof and is present in an amount sufficient to dissolve the hydrogen silsesquioxane to between about 0.1 and about 95 weight percent.
Claim 7
Dependent Claim 16 words
The method of claim 5 wherein the solvent has a boiling point greater than 175° C.
Claim 8
Dependent Claim 28 words
The method of claim 5 wherein the solvent is a mixture of solvents and at least one of the solvents has a boiling point greater than 175° C.
Claim 9
Dependent Claim 19 words
The method of claim 6 wherein the solvent with a boiling point greater than 175° C. is a hydrocarbon.
Claim 10
Dependent Claim 19 words
The method of claim 7 wherein the solvent with a boiling point greater than 175° C. is a hydrocarbon.
Claim 11
Dependent Claim 26 words
The method of claim 2 wherein the coating is heated to a temperature of about 50 to about 500° C. for up to about 6 hours.
Claim 12
Dependent Claim 20 words
The method of claim 1 wherein the substrate is coated in a closed system to inhibit evaporation of the solvent.
Claim 13
Dependent Claim 33 words
The method of claim 1 wherein the coating is exposed to ammonia and water vapors for up to about 4 hours at a temperature of between about 20° C. and about 300° C.
Claim 14
Dependent Claim 10 words
The coating prepared by the method of claim 1 .
Claim 15
Dependent Claim 14 words
An electronic device containing a coating prepared by the method of claim 1 .
Claim 16
Dependent Claim 14 words
An electronic circuit containing a coating prepared by the method of claim 1 .
Claim 17
Dependent Claim 23 words
A coating composition comprising a resin containing at least 2 Si—H groups and a solvent having a boiling point higher than 175° C.
Claim 18
Dependent Claim 23 words
A coating composition comprising a resin containing at least 2 Si—H groups and a solvent having a boiling point higher than 175° C.
Claim 19
Dependent Claim 28 words
A coating on a semiconductor substrate produced from a resin containing at least 2 Si—H groups, wherein the coating has a dielectric constant of from 1.1 to 2.4.
Claim 20
Dependent Claim 28 words
A coating on a semiconductor substrate produced from a resin containing at least 2 Si—H groups, wherein the coating has a dielectric constant of from 1.1 to 2.4.
Claim 21
Dependent Claim 17 words
The coating of claim 17 wherein the coating has a dielectric constant of from 1.5 to 2.2.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-05-14 2004-11-13 2005-05-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-05-14 2008-11-13 2009-05-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-05-14 2012-11-13 2013-05-15 $7700.00 Window Closed / Lapsed

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