US6229217B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Sharp Corp
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Filing: 2000-06-27
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Granted: 2001-05-08
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Expires: 2020-06-27
Abstract
Abstract A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.
Inventors
- 👤 Yasuki Fukui
- 👤 Yoshiki Sota
- 👤 Yuji Matsune
- 👤 Atsuya Narai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:46
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/014; H10W74/10; H10W74/111; H10W74/114; H10W90/00; H10W46/00; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/656; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07511; H10W72/07521; H10W72/07551; H10W72/07553; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/537; H10W72/541; H10W72/5434; H10W72/547; H10W72/5473; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W74/131; H10W74/142; H10W74/15; H10W90/20; H10W90/271; H10W90/291; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/732; H10W90/734; H10W90/751; H10W90/752; H10W90/753; H10W90/754
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
135 words
A semiconductor device including a stacked package structure and a chip size package structure, comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a first adhesion layer adhered to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through the first insulating adhesion layer; and a second semiconductor chip having a second adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuit-formed front surface of said first semiconductor chip through the second insulating adhesion layer; each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 2
Dependent Claim
135 words
A semiconductor device including a stacked package structure and a chip size package structure, comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a first adhesion layer adhered to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through the first insulating adhesion layer; and a second semiconductor chip having a second adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuit-formed front surface of said first semiconductor chip through the second insulating adhesion layer; each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 3
Dependent Claim
129 words
A semiconductor device including a stacked package structure and a chip size package structure, comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a paste applied to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through said paste; and a second semiconductor chip having a second adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuit-formed front surface of said first semiconductor chip through the second adhesion layer; each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 4
Dependent Claim
129 words
A semiconductor device including a stacked package structure and a chip size package structure, comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a paste applied to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through said paste; and a second semiconductor chip having a second adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuit-formed front surface of said first semiconductor chip through the second adhesion layer; each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 5
Dependent Claim
131 words
A semiconductor device comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a circuit formed on its front surface and an adhesion layer adhered to its back surface; a metal bump, disposed between said first semiconductor chip and said wiring layer, for bump-bonding the front surface of said first semiconductor chip to said wiring layer so that the front surface faces said wiring layer; and a second semiconductor chip whose back surface where a circuit is not formed is mounted on the back surface of said first semiconductor chip through the adhesion layer; said second semiconductor chip being wire-bonded to the electrode section of said wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 6
Dependent Claim
131 words
A semiconductor device comprising: an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a circuit formed on its front surface and an adhesion layer adhered to its back surface; a metal bump, disposed between said first semiconductor chip and said wiring layer, for bump-bonding the front surface of said first semiconductor chip to said wiring layer so that the front surface faces said wiring layer; and a second semiconductor chip whose back surface where a circuit is not formed is mounted on the back surface of said first semiconductor chip through the adhesion layer; said second semiconductor chip being wire-bonded to the electrode section of said wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 7
Dependent Claim
25 words
The semiconductor device as set forth in claim 3 , wherein the back surfaces of said first and second semiconductor chips have a same shape.
Claim 8
Dependent Claim
35 words
The semiconductor device as set forth in claim 3 , further comprising a light blocking layer, disposed between said first semiconductor chip and said wiring layer, for blocking a light incident from said insulating substrate.
Claim 9
Dependent Claim
61 words
The semiconductor device as set forth in claim 1 , wherein, when said first and second semiconductor chips have different shapes, a support member is used for supporting and fixing a protruding part of the back surface of said second semiconductor chip, which is not facing said first semiconductor chip, said support member having a same shape as the protruding part.
Claim 10
Dependent Claim
61 words
The semiconductor device as set forth in claim 2 , wherein, when said first and second semiconductor chips have different shapes, a support member is used for supporting and fixing a protruding part of the back surface of said second semiconductor chip, which is not facing said first semiconductor chip, said support member having a same shape as the protruding part.
Claim 11
Dependent Claim
61 words
The semiconductor device as set forth in claim 3 , wherein, when said first and second semiconductor chips have different shapes, a support member is used for supporting and fixing a protruding part of the back surface of said second semiconductor chip, which is not facing said first semiconductor chip, said support member having a same shape as the protruding part.
Claim 12
Dependent Claim
26 words
The semiconductor device as set forth in claim 6 , wherein said support member has a same coefficient of linear expansion as said second semiconductor chip.
Claim 13
Dependent Claim
26 words
The semiconductor device as set forth in claim 7 , wherein said support member has a same coefficient of linear expansion as said second semiconductor chip.
Claim 14
Dependent Claim
26 words
The semiconductor device as set forth in claim 8 , wherein said support member has a same coefficient of linear expansion as said second semiconductor chip.
Claim 15
Dependent Claim
81 words
The semiconductor device as set forth in claim 1 , wherein one end of the wire for connecting said first semiconductor chip to said wiring layer and the wire for connecting said second semiconductor chip to said wiring layer are connected to a first electrode pad disposed on said first semiconductor chip and a second electrode pad disposed on said second semiconductor chip, respectively, and the other ends of the wires are connected to the electrode sections of said wiring layer.
Claim 16
Dependent Claim
81 words
The semiconductor device as set forth in claim 2 , wherein one end of the wire for connecting said first semiconductor chip to said wiring layer and the wire for connecting said second semiconductor chip to said wiring layer are connected to a first electrode pad disposed on said first semiconductor chip and a second electrode pad disposed on said second semiconductor chip, respectively, and the other ends of the wires are connected to the electrode sections of said wiring layer.
Claim 17
Dependent Claim
100 words
The semiconductor device as set forth in claim 12 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire and when the other ends of the first and second wires are bonded to the same electrode section, the electrode section is arranged to have a first electrode portion to which the first electrode pad is connected with the first wire and a second electrode portion to which the second electrode pad is connected with the second wire.
Claim 18
Dependent Claim
100 words
The semiconductor device as set forth in claim 13 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire, and when the other ends of the first and second wires are bonded to the same electrode section, the electrode section is arranged to have a first electrode portion to which the first electrode pad is connected with the first wire and a second electrode portion to which the second electrode pad is connected with the second wire.
Claim 19
Dependent Claim
97 words
The semiconductor device as set forth in claim 12 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire, and when the first and second electrode pads are bonded to the same electrode section, the first and second electrode pads are connected to each other by connecting the other end of the second wire to the first electrode pad, and the first electrode pad is connected to the electrode section with the first wire.
Claim 20
Dependent Claim
97 words
The semiconductor device as set forth in claim 13 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire, and when the first and second electrode pads are bonded to the same electrode section, the first and second electrode pads are connected to each other by connecting the other end of the second wire to the first electrode pad, and the first electrode pad is connected to the electrode section with the first wire.
Claim 21
Dependent Claim
89 words
The semiconductor device as set forth in claim 12 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire, and when the other ends of the first and second wires are bonded to different electrode sections, a dummy pad is provided on the first semiconductor chip so as to connect the second electrode pad to said wiring layer with the second wire via the dummy pad.
Claim 22
Dependent Claim
89 words
The semiconductor device as set forth in claim 13 , wherein the wire connected to the first electrode pad in one end is a first wire and the wire connected to the second electrode pad in one end is a second wire, and when the other ends of the first and second wires are bonded to different electrode sections, a dummy pad is provided on the first semiconductor chip so as to connect the second electrode pad to said wiring layer with the second wire via the dummy pad.
Claim 23
Dependent Claim
36 words
The semiconductor device as set forth in claim 3 , further comprising an insulating layer for preventing degradation of said metal bump, said insulating layer being disposed between said first semiconductor chip and said wiring layer.
Claim 24
Dependent Claim
37 words
The semiconductor device as set forth in claim 20 , wherein said insulating layer includes a layer having a light blocking property and a size arranged so as not to come into contact with said metal bump.
Claim 25
Dependent Claim
36 words
The semiconductor device as set forth in claim 3 , further comprising a filling material for preventing degradation of said metal bump, said filling material being filled between said first semiconductor chip and said wiring layer.
Claim 26
Dependent Claim
177 words
A semiconductor device comprising: an insulating substrate including a wiring layer on its surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole; a first semiconductor chip produced by forming a first adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said first semiconductor chip being mounted on said insulating substrate through the first adhesion layer; and a second semiconductor chip produced by forming a second adhesion layer on a back surface of a wafer having a circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second adhesion layer; said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 27
Dependent Claim
177 words
A semiconductor device comprising: an insulating substrate including a wiring layer on its surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole; a first semiconductor chip produced by forming a first adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said first semiconductor chip being mounted on said insulating substrate through the first adhesion layer; and a second semiconductor chip produced by forming a second adhesion layer on a back surface of a wafer having a circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second adhesion layer; said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 28
Dependent Claim
157 words
A semiconductor device comprising: an insulating substrate including a wiring layer on its front surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole; a first semiconductor chip having a desired circuit formed on its front surface, said first semiconductor chip being mounted through an insulating paste; and a second semiconductor chip produced by forming a second insulating adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second insulating adhesion layer; said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 29
Dependent Claim
157 words
A semiconductor device comprising: an insulating substrate including a wiring layer on its front surface and a packaging-use external terminal on its back surface, the wiring layer having an electrode section, the packaging-use external terminal being electrically connected to said wiring layer through a via hole; a first semiconductor chip having a desired circuit formed on its front surface, said first semiconductor chip being mounted through an insulating paste; and a second semiconductor chip produced by forming a second insulating adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a circuit-formed surface of said first semiconductor chip through the second insulating adhesion layer; said first and second semiconductor chips being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 30
Dependent Claim
53 words
The semiconductor device as set forth in claim 23 , wherein, when an outer edge of said second semiconductor chip protrudes from an outer edge of said first semiconductor chip, a support member having a same thickness as said first semiconductor chip is provided under a protruding part of said second semiconductor chip.
Claim 31
Dependent Claim
49 words
The semiconductor device as set forth in claim 24 , wherein, when an outer edge of said second semiconductor chip protrudes from an outer edge of said first semiconductor chip, a support member having a same thickness as said first semiconductor chip is provided under said second semiconductor chip.
Claim 32
Dependent Claim
198 words
A semiconductor device comprising: a first semiconductor chip; an insulating substrate including on its front surface a wiring layer having an electrode section; an insulating layer disposed in an area where said first semiconductor chip is to be mounted, except for a part to be connected to said first semiconductor chip; and a metal bump for making electrical connection to said first semiconductor chip, said insulating substrate including on its back surface a packaging-use external terminal electrically connected to said wiring layer through a via hole, said first semiconductor chip being mounted on the front surface of said insulating substrate by face-down bonding through said metal bump; and a second semiconductor chip produced by forming a first adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a surface of said first semiconductor chip on which surface a circuit is not formed, through the first adhesion layer; said second semiconductor chip being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 33
Dependent Claim
198 words
A semiconductor device comprising: a first semiconductor chip; an insulating substrate including on its front surface a wiring layer having an electrode section; an insulating layer disposed in an area where said first semiconductor chip is to be mounted, except for a part to be connected to said first semiconductor chip; and a metal bump for making electrical connection to said first semiconductor chip, said insulating substrate including on its back surface a packaging-use external terminal electrically connected to said wiring layer through a via hole, said first semiconductor chip being mounted on the front surface of said insulating substrate by face-down bonding through said metal bump; and a second semiconductor chip produced by forming a first adhesion layer on a back surface of a wafer having a desired circuit formed on its front surface and by dicing the wafer, said second semiconductor chip being mounted on a surface of said first semiconductor chip on which surface a circuit is not formed, through the first adhesion layer; said second semiconductor chip being connected to the electrode section of the wiring layer with a wire, said first and second semiconductor chips and the wire being sealed with a resin.
Claim 34
Dependent Claim
19 words
The semiconductor device as set forth in claim 27 , wherein the insulating layer includes a light blocking layer.
Claim 35
Dependent Claim
53 words
The semiconductor device as set forth in claim 27 , wherein, when an outer edge of said second semiconductor chip protrudes from an outer edge of said first semiconductor chip, a support member having a same thickness as said first semiconductor chip is provided under a protruding part of said second semiconductor chip.
Claim 36
Independent Claim
165 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a first insulating adhesion layer on a back surface of a first wafer having a circuit formed on its front surface; (b) producing separate first semiconductor chips from said first wafer by dicing; (c) mounting said first semiconductor chip on a wiring layer with its back surface facing said wiring layer; (d) forming a second insulating adhesion layer on a back surface of a second wafer having a circuit formed on its front surface; (e) producing separate second semiconductor chips from said second wafer by dicing; (f) mounting said second semiconductor chip on said first semiconductor chip with its back surface facing said first semiconductor chip; (g) wire-bonding said first semiconductor chip to an electrode section of said wiring layer with a wire; (h) wire-bonding said second semiconductor chip to an electrode section of said wiring layer with a wire; and (i) sealing said first and second semiconductor chips and the wires.
Claim 37
Independent Claim
165 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a first insulating adhesion layer on a back surface of a first wafer having a circuit formed on its front surface; (b) producing separate first semiconductor chips from said first wafer by dicing; (c) mounting said first semiconductor chip on a wiring layer with its back surface facing said wiring layer; (d) forming a second insulating adhesion layer on a back surface of a second wafer having a circuit formed on its front surface; (e) producing separate second semiconductor chips from said second wafer by dicing; (f) mounting said second semiconductor chip on said first semiconductor chip with its back surface facing said first semiconductor chip; (g) wire-bonding said first semiconductor chip to an electrode section of said wiring layer with a wire; (h) wire-bonding said second semiconductor chip to an electrode section of said wiring layer with a wire; and (i) sealing said first and second semiconductor chips and the wires.
Claim 38
Independent Claim
119 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming an insulating layer and a metal bump on a wiring layer; (b) mounting a first semiconductor chip on said wiring layer with its circuit-formed surface facing said wiring layer; (c) forming an insulating adhesion layer on a back surface of a wafer having a circuit formed on its front surface; (d) producing separate second semiconductor chips from the wafer by dicing; (e) mounting said second semiconductor chip on said first semiconductor chip with its back surface facing said first semiconductor chip; (f) wire-bonding said second semiconductor chip to said wiring layer with a wire; and (g) sealing said first and second semiconductor chips and the wire.
Claim 39
Independent Claim
119 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming an insulating layer and a metal bump on a wiring layer; (b) mounting a first semiconductor chip on said wiring layer with its circuit-formed surface facing said wiring layer; (c) forming an insulating adhesion layer on a back surface of a wafer having a circuit formed on its front surface; (d) producing separate second semiconductor chips from the wafer by dicing; (e) mounting said second semiconductor chip on said first semiconductor chip with its back surface facing said first semiconductor chip; (f) wire-bonding said second semiconductor chip to said wiring layer with a wire; and (g) sealing said first and second semiconductor chips and the wire.
Claim 40
Dependent Claim
89 words
The method of manufacturing the semiconductor device as set forth in claim 30 , further comprising the steps of: (j) forming a metal ball on each end of the wire for connecting said second semiconductor chip to the electrode section of the wiring layer; (k) connecting one of the metal balls to said second semiconductor chip; (l) cutting said wire; and (m) making a surface of the metal ball connected to said second semiconductor chip flat; said steps (j) to (m) being included between said steps (g) and (h).
Claim 41
Dependent Claim
75 words
The method of manufacturing the semiconductor device as set forth in claim 31 , further comprising the steps of: (h) forming a metal ball on each end of the wire; (i) connecting one of the metal balls to said second semiconductor chip; (j) cutting the wire; and (k) making a surface of the metal ball connected to said second semiconductor chip flat; said steps (h) to (k) being included between said steps (e) and (f).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-07 | 2004-11-06 | 2005-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-07 | 2008-11-06 | 2009-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-07 | 2012-11-06 | 2013-05-08 | $7700.00 | Window Closed / Lapsed |