US6207986B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device
Assignee: Hitachi Ltd
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Filing: 1999-08-26
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Granted: 2001-03-27
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Expires: 2019-08-26
Abstract
Abstract A semiconductor integrated circuit device offering a phase pattern makeup that excludes mixture of insular and linear patterns in a mask for forming a single wire electrode layer so as to eliminate inconsistency in the Levenson arrangement of phase shifters. A plurality of wire electrodes are spaced a minimum size apart and are in different phases. Between two adjacent wire electrodes are plug electrodes each formed with an upper and a lower layer plug electrode in direct contact, with no intervention of wire electrodes and without the presence of an insular pattern made of the same wire electrode layer. This setup allows the Levenson arrangement to take shape for enhanced pattern density, whereby a semiconductor integrated circuit device of a high degree of integration is implemented.
Inventors
- 👤 Toshiaki Yamanaka
- 👤 Shin'ichiro Kimura
- 👤 Hideyuki Matsuoka
- 👤 Takeshi Sakata
- 👤 Tomonori Sekiguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:52
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10B; H10B12/00; H10B12/01; H10B12/09; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
168 words
A semiconductor integrated circuit device comprising: a first insulating film; a first conductor penetrating through said first insulating film; first and second wire electrodes patterned on said first insulating film in the same step using a phase-shifting mask; a second insulating film on said first and said second wire electrodes; and a second conductor penetrating through said second insulating film; wherein said first conductor electrically connects at least either said first or said second wire electrodes to either circuit elements or circuit wires located under said first insulating film; wherein said second conductor electrically connects either said first or said second wire electrodes to either circuit elements or circuit wires located on said second insulating film; and wherein, between adjacent first and second wire electrodes, a conductor formed with said first and said second conductor in direct contact is spaced from at least one of said adjacent first and second wire electrodes by a distance less than a minimum distance between said first and said second wire electrodes.
Claim 2
Dependent Claim
168 words
A semiconductor integrated circuit device comprising: a first insulating film; a first conductor penetrating through said first insulating film; first and second wire electrodes patterned on said first insulating film in the same step using a phase-shifting mask; a second insulating film on said first and said second wire electrodes; and a second conductor penetrating through said second insulating film; wherein said first conductor electrically connects at least either said first or said second wire electrodes to either circuit elements or circuit wires located under said first insulating film; wherein said second conductor electrically connects either said first or said second wire electrodes to either circuit elements or circuit wires located on said second insulating film; and wherein, between adjacent first and second wire electrodes, a conductor formed with said first and said second conductor in direct contact is spaced from at least one of said adjacent first and second wire electrodes by a distance less than a minimum distance between said first and said second wire electrodes.
Claim 3
Dependent Claim
72 words
A semiconductor integrated circuit device according to claim 1 , wherein said adjacent first and second wire electrodes are patterned using mask patterns having opposite phases; and wherein said conductor formed with said first and said second conductor in direct contact electrically connects either said circuit elements or said circuit wires located under said first insulating film, to either said circuit elements or said circuit wires located on said second insulating film.
Claim 4
Dependent Claim
30 words
A semiconductor integrated circuit device according to claim 2 , wherein said adjacent first and second wire electrodes are electrically connected to a data line pair of a dynamic RAM.
Claim 5
Dependent Claim
129 words
A semiconductor integrated circuit device according to claim 1 , wherein said adjacent first and second wire electrodes are patterned using mask patterns in phase with each other; wherein one end of said conductor made with said first and said second conductor in direct contact is connected to a drain diffusion layer of a field effect transistor under said first insulating film and the other end of said conductor is connected to a drain wire electrode on said second insulating film; and wherein one of said adjacent first and second wire electrodes is a source wire electrode of said field effect transistor and the other one of said adjacent first and second wire electrodes is a wire electrode of another field effect transistor adjacent to said field effect transistor.
Claim 6
Dependent Claim
39 words
A semiconductor integrated circuit device according to claim 1 , wherein apertures penetrating through said first insulating film constituting said first conductor are each greater in diameter than apertures penetrating through said second insulating film constituting the second conductor.
Claim 7
Dependent Claim
72 words
A semiconductor integrated circuit device according to claim 5 , wherein said adjacent first and second wire electrodes are patterned using mask patterns having opposite phases; and wherein said conductor formed with said first and said second conductor in direct contact electrically connects either said circuit elements or said circuit wires located under said first insulating film, to either said circuit elements or said circuit wires located on said second insulating film.
Claim 8
Dependent Claim
30 words
A semiconductor integrated circuit device according to claim 6 , wherein said adjacent first and second wire electrodes are electrically connected to a data line pair of a dynamic RAM.
Claim 9
Dependent Claim
129 words
A semiconductor integrated circuit device according to claim 5 , wherein said adjacent first and second wire electrodes are patterned using mask patterns in phase with each other; wherein one end of said conductor made with said first and said second conductor in direct contact is connected to a drain diffusion layer of a field effect transistor under said first insulating film and the other end of said conductor is connected to a drain wire electrode on said second insulating film; and wherein one of said adjacent first and second wire electrodes is a source wire electrode of said field effect transistor and the other one of said adjacent first and second wire electrodes is a wire electrode of another field effect transistor adjacent to said field effect transistor.
Claim 10
Dependent Claim
45 words
A semiconductor integrated circuit device according to claim 1 , wherein apertures penetrating through said first and said second insulating film constituting said first and said second conductor are tapered in shape, upper portions of said apertures being made progressively wider than lower portions thereof.
Claim 11
Dependent Claim
72 words
A semiconductor integrated circuit device according to claim 9 , wherein said adjacent first and second wire electrodes are patterned using mask patterns having opposite phases; and wherein said conductor formed with said first and said second conductor in direct contact electrically connects either said circuit elements or said circuit wires located under said first insulating film, to either said circuit elements or said circuit wires located on said second insulating film.
Claim 12
Dependent Claim
30 words
A semiconductor integrated circuit device according to claim 10 , wherein said adjacent first and second wire electrodes are electrically connected to a data line pair of a dynamic RAM.
Claim 13
Dependent Claim
129 words
A semiconductor integrated circuit device according to claim 9 , wherein said adjacent first and second wire electrodes are patterned using mask patterns in phase with each other; wherein one end of said conductor made with said first and said second conductor in direct contact is connected to a drain diffusion layer of a field effect transistor under said first insulating film and the other end of said conductor is connected to a drain wire electrode on said second insulating film; and wherein one of said adjacent first and second wire electrodes is a source wire electrode of said field effect transistor and the other one of said adjacent first and second wire electrodes is a wire electrode of another field effect transistor adjacent to said field effect transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |