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US6204515B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconducting polymer field effect transistor

Assignee: Sumitomo Chemical Co Ltd
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Filing: 1999-12-22
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Granted: 2001-03-20
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Expires: 2019-12-22
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Abstract

Abstract A field effect transistor is made of five parts. The first part is an insulator layer, the insulator layer being an electrical insulator such as silica, the insulator layer having a first side and a second side. The second part is a gate, the gate being an electrical conductor such as silver, the gate being positioned on the first side of the insulator layer. The third part is a semiconductor layer, the semiconductor layer including a polymer, at least ten weight percent of the monomer units of the polymer being a 9-substituted fluorene unit and/or a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being on the second side of the insulator layer. The fourth part is a source, the source being an electrical conductor such as silver, the source being in electrical contact with the first end of the semiconductor layer. The fifth part is a drain, the drain being an electrical conductor such as silver, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a conduction channel in the semiconductor layer from the source to the drain. On the other hand, a positive bias applied to the gate causes the formation of an electron conducting channel in the semiconductor layer.

Inventors

  • 👤 Mark T. Bernius
  • 👤 Edmund P. Woo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 23:29
CPC Classifications
H; H10; H10K; H10K85/00; H10K85/10; H10K85/111; H10K85/114; H10P; H10P10/00; H10K10/00; H10K10/40; H10K10/46; H10K10/462; H10K10/466; H10K10/468; H10K85/151; H10K10/471; H10K10/472; H10K85/113; H10K85/115; H10K85/60; H10K85/631

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 192 words
A field effect transistor, comprising: (a) an insulator layer, the insulator layer being an electrical insulator, the insulator layer having a first side and a second side; (b) a gate, the gate being an electrical conductor, the gate being positioned adjacent the first side of the insulator layer; (c) a semiconductor layer, the semiconductor layer comprising a copolymer of at least one fluorene-based monomer and at least one other conjugated monomer containing up to 30 carbon atoms, which other monomer is not a fluorene, at least ten weight percent of the monomer units of the copolymer being selected from the group consisting of a 9-substituted fluorene unit and a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being adjacent the second side of the insulator layer; (d) a source, the source being an electrical conductor, the source being in electrical contact with the first end of the semiconductor layer; and (e) a drain, the drain being an electrical conductor, the drain being in electrical contact with the second end of the semiconductor layer.
Claim 2
Dependent Claim 192 words
A field effect transistor, comprising: (a) an insulator layer, the insulator layer being an electrical insulator, the insulator layer having a first side and a second side; (b) a gate, the gate being an electrical conductor, the gate being positioned adjacent the first side of the insulator layer; (c) a semiconductor layer, the semiconductor layer comprising a copolymer of at least one fluorene-based monomer and at least one other conjugated monomer containing up to 30 carbon atoms, which other monomer is not a fluorene, at least ten weight percent of the monomer units of the copolymer being selected from the group consisting of a 9-substituted fluorene unit and a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being adjacent the second side of the insulator layer; (d) a source, the source being an electrical conductor, the source being in electrical contact with the first end of the semiconductor layer; and (e) a drain, the drain being an electrical conductor, the drain being in electrical contact with the second end of the semiconductor layer.
Claim 3
Dependent Claim 15 words
The transistor of claim 1 , wherein the semiconductor layer consists essentially of the copolymer.
Claim 4
Dependent Claim 35 words
The transistor of claim 1 , wherein at least 20 weight percent of the monomer units of the copolymer are selected from the group consisting of a 9-substituted fluorene unit and a 9,9-substituted fluorene unit.
Claim 5
Dependent Claim 35 words
The transistor of claim 1 , wherein at least 30 weight percent of the monomer units of the copolymer are selected from the group consisting of a 9-substituted fluorene unit and a 9,9-substituted fluorene unit.
Claim 6
Dependent Claim 30 words
The transistor of claim 1 , wherein the semiconductor layer is in direct contact with the insulator layer and wherein the gate is in direct contact with the insulator layer.
Claim 7
Dependent Claim 39 words
The transistor of claim 1 wherein the other conjugated monomer is selected from the group consisting of aromatic amines, stilbenes, tolanes, C 6 -C 20 mononuclear or polynuclear aromatic hydrocarbons, and C 2 -C 10 mononuclear or polynuclear heterocycles.
Claim 8
Dependent Claim 12 words
The transistor of claim 1 wherein the other conjugated monomer is thiophene.
Claim 9
Dependent Claim 65 words
The transistor of claim 1 wherein the other monomer is selected from wherein R 3 is independently, in each occurrence, carboxyl, C 1 -C 20 alkyl, C 1 -C 20 alkoxy or a group of the formula —CO 2 R 4 , wherein R 4 is a C 1 -C 20 alkyl; and b is independently, in each occurrence, an integer from 0 to 3.
Claim 10
Dependent Claim 12 words
The transistor of claim 1 wherein the copolymer is an alternating copolymer.
Claim 11
Dependent Claim 10 words
The transistor of claim 1 wherein the copolymer is aligned.
Claim 12
Dependent Claim 20 words
The transistor of claim 1 wherein the copolymer has a carrier mobility of at least 1×10 4 cm 2 /volt-second.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-03-19 2004-09-18 2005-03-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-03-19 2008-09-18 2009-03-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-03-19 2012-09-18 2013-03-20 $7700.00 Window Closed / Lapsed

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